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BASIC ELECTRONICS
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BASIC ELECTRONICS
SOLVED PAPERS FOR VTU
2013 Aim High Educational Services
CONTENTS
Solved Paper - Dec 09/ Jan 10
Solved Paper - June/ July 10
Solved Paper - Jan 2011
Solved Paper - June / July 11
Solved Paper - Dec 2011
Solved Paper - June/ July 12
Solved Paper - Jan 2013
Solved Paper - June/ July 13
PAT-I
1. a. i) The cut- in voltage of a Si- P- n diode is about ...... 4Marks
a) 0.6V
b) 0.6mV
c) 1.2V d) I. 2mV
ii) The ripple factor for a fll- wave rectifer is.
a) 0.482 b) 0.5
c) 1.21 d) -1.21
iii) The Zener resistance of a Zener diode, which exhibits 50mV change in Vz for a 2.5mA
change in I, is
iv) The average output voltage of a half wave rectifer with an input of 300 sin 314t is
a) 100V
b) 95.49V
c) 90.49 V d) 90.0 V
Ans:- i) (a) ii) (a) iii) 20.0 iv) (b)
I.b Draw and explain The VI characteristic ofSi and Ge diodes. 6 Marks
.
Ans. Silicon diode Forward & Reverse characteristic
V
-7
5
V
R
100
80
20
-SOY -
2
5
V
I
R
(!A)
0.6 0.7V
Forward & Reverse characteris
tic of silicon diode.
+ For silicon diode, The forward current '1/ remains ver low (<tA) until the diode
forward bias voltage 'V/ exceeds approximately 0.7 V.
+ Above 0.7V, 'I
F
' increases afmost linearly with increase in 'V
F
'. The diode reverse
current 'I
R
' is very much smaller than its forward current 'IF' Forsicon diode, "I
R
"
is pormally less Then IOOnA, and it is almost completely independent ofthe reverse
- bias voltage.
Dec 09/ Jan 10
BASIC ELECTRONICS
Time: 3 Hours (COMMON FOR ALL BRANCHES) Max. Marks: 100
VTU I/II Semester B.E. Degree Examination Basic Electronics
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"

U
"
-

Y
Y
U.1 U. U.`
Y
2
0
v
,|Y)
+ 'IR' is due to minority change carriers and is called reverse saturation current.
+ When reverse bias voltage `Y_is sufciently increased, The diode goes into reverse
breakdown which may destroy.
Reverse breakdown occurs at 7SV
Germanium diode Forward and Reverse characteristic

_mA)
1UU
8U
-
U

.A
-1A
Forward & Reverse characteristic of
Germanium diode.
|_(jtA)
+ For Germanium diode, The forward current "I
F
' remains very low (<JA) until the
diode forward bias voltage 'V
F
'
exceeds approximately 0.3V
+ Above 0.3V, 'I/ increases almost linearly with increase in 'V
F
'. The diode reverse
current 'IR' is very much smaller than its forward current 'I
F
' for Germanium diode,
"I
R
" is normally less than 1A, and it is almost completely less independent of the
rever:e - bias voltage.
+ 'IR' is due to minority change carriers and is called reverse saturation current.
+ When reverse bias voltage `
"
s
`is sufciently increased, The diode goes into reverse
breakdown which may destroy
+ Reverse breakdown occurs at SOY.
I.e. Draw Te circuit of a half wave rectifer and explain its working with necessary
waveforms. 6 Marks
A
B
VTU I/II Semester B.E. Degree Examination Basic Electronics
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J
1
1
w


1
0
n

Fig(a) Half wave rectifer (b) Wave forms of transformer secondary voltage load current load
voltage.
Half wave rectifer consisted of a single diode in series with load resistance. Te ac
voltage across the secondary winding A & B changes polarities afer half cycle.
Operation :-
During positive half cycle of the ac input voltage end A becomes positive w.r.t end B, The
diode 'D' is forward biased and acts as a short circuit, Thus the cux rent flows in the circuit, as
shown in Fig (b). The load voltage is given by Vo = ILRL.
10
I
m
0
A
2
2n
D
I
L
R
L
3n
A
D
J
R
L
I
1
During negative half cycle of the ac input voltage end A becomes negative w.r.t end B, The
diode 'D' is reverse bi ased and acts as a open ci rcuit, thus in the circuit as
shown in Fig. C . The load voltage is gven by V0 =Ox :.
VTU I/II Semester B.E. Degree Examination Basic Electronics
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l
1/ I
Given:- V
F
= 0.7v, RL= 600 n, Vs= 24 v
+ v = J XV= J X 24=33.941 v.
m '
+ I = v"-v, = 33.9
41
-0
.
7 =55
.4
0
1
8mA
0
R
600
I.
The de output wave form is expected to be a straight. line but the half wave rectifer gives
output in the form of positive sinusoidal pulse. Hence The output is called pulsating de
Te load current is given by :
10m Sinwt
wh"e
=
V
M RL
I
L
= 0 wt n
1 wt 2n
l.d. A diode with V
F
= 0.7v is connected as a half wave rectifer. The load resistance is
600f and The (rms) ac input is 24V. DetermineThe peak output voltage, the peak
load current and the diode peak reverse voltage. 4 Marks
+ PlY= V1 = 33.941V
+ Peak 0/P voltage.
= vo = I
M
I SSA018mA X 600 = 33.24V
or V
0
= V
M
-V
F
= 33.941-0.7 = 33.24V
2a. i) The doping of the emitter region of a transistor is ........... the base region 4 Marks
a) Greater than b) Equal to
c) Less than d) Much less than
ii) If a= 0.951 Then the value of of the transistor is .........
a) 190 b) 19
c) 0.05 d) 25
iii) The input resistance is highest for .......
a) CB amplifer b) CC amplifer
c) CE amplifer d) None of These
iv) For cascading one should use .......... .
a) CE confguration b) CB confguration
c) CC confguration d) None of these
Ans:- i) (a) ii) (b) iii) (c) iv) (c)
2.b. Draw a block diagram of an un - biased n - p - n transistor. Identify each part of the device
and show the depletion regions and barrier voltages. Briefly explain. 5 Marks
VTU I/II Semester B.E. Degree Examination Basic Electronics
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