VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

TYPE VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04

(*) For PowerSO-10 only

RDS(on) 10 m (*)

Ilim

Vclamp
10

30 A

40 V
1

D2PAK

PowerSO-10

n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT

3 1 2
1

3 2

TO-220

TO-247 ORDER CODES: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04

PIN

n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE

D2PAK TO-220 PowerSO-10 TO-247

POWER MOSFET (ANALOG DRIVING)

n COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM

intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

DRAIN

2 Overvoltage Clamp

INPUT

Gate Control

Over Temperature

Linear Current Limiter

3
SOURCE
FC01000

March 2004

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ABSOLUTE MAXIMUM RATING
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature PowerSO-10 Value D2PAK TO-220 Internally Clamped Internally Clamped +/-20 4.7 Internally Limited -30 4000 16500 125 125 125 Internally limited Internally limited -55 to 150 208 Unit TO-247 V V mA A A V V W C C C

CONNECTION DIAGRAM (TOP VIEW)

INPUT INPUT INPUT INPUT INPUT

6 7 8 9 10 11 DRAIN

5 4 3 2 1

SOURCE SOURCE N.C. SOURCE SOURCE

(*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1.

CURRENT AND VOLTAGE CONVENTIONS

ID VDS

DRAIN IIN RIN INPUT SOURCE

VIN

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

THERMAL DATA
Symbol Rthj-case Rthj-amb
(*) When

PowerSO-10 Thermal Resistance Junction-case}}} MAX 1 Thermal Resistance Junction-ambient MAX 50(*)

Parameter

Value D2PAK 1 50(*)

TO-220 1 50

TO-247 0.6 30

Unit C/W C/W

mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=15A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A

ON
Max Symbol Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=15A; Tj=25C VIN=5V; ID=15A; Tj=150C PowerSO-10 10 20 D2PAK TO-220 / TO-247 13 24 Unit m

RDS(on)

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified) DYNAMIC
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=15A VDS=13V; f=1MHz; VIN=0V Min Typ 35 1300 Max Unit S pF

SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7 (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=2.2K (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7 VDD=12V; ID=15A; VIN=5V Igen =2.13mA (see figure 5) Min Typ 150 840 980 600 4 27 34 31 18 118 Max 500 2500 3000 1500 12 100 120 110 Unit ns ns ns ns s s s s A/s nC

SOURCE DRAIN DIODE

Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=15A; VIN=0V ISD=15A; dI/dt=100A/s Min Typ 0.8 400 1.4 7 Max Unit V ns C A

VDD=30V; L=200H Reverse Recovery Current (see test circuit, figure 2)

PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=6V; VDS=13V VIN=6V; VDS=13V Min 30 Typ 45 50 150 135 10 1.7 175 200 Max 60 Unit A s C C mA J

VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MIN=4.7; L=24mH (see figures 3 & 4)

15

20

(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 25KHz. The only difference from the users standpoint is that a small DC current IISS (typ. 100A) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig.1: Switching Time Test Circuit for Resistive Load

VD Rgen Vgen

ID 90%

tr td(on)

10% td(off)

tf t

Vgen

t Fig.2: Test Circuit for Diode Recovery Times

A D I

A
FAST DIODE

OMNIFET
S 25 B

L=100uH B

Rgen

VDD
I

OMNIFET
S

Vgen

8.5

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig. 3: Unclamped Inductive Load Test Circuits Fig. 4: Unclamped Inductive Waveforms

RGEN VIN PW

Fig. 5: Input Charge Test Circuit

Fig 6 : Thermal Impedance for TO-220

VIN

GEN

ND8003

Fig. 7:Thermal Impedance for TO-247

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Source-Drain Diode Forward Characteristics
Vsd (mV)
950

Static Drain Source On Resistance

Rds(on) (mOhm)
50

900

Vin=2.5V

Tj=-40C

Vin=0V
850

40

Tj=25C

800

30

Tj=150C

750 20 700

650 0 5 10 15 20 25 30 35

10 0 1 2 3 4 5 6

Id (A)

Id (A)

PowerSO-10 Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mOhm)
27.5 25 22.5 20 17.5 15 12.5
Tj=25C
Id=15A Id=7.5A

D2PAK, TO-220 & TO-247 Static Drain-Source On resistance Vs. Input Voltage
Rds(on) (mOhm)
30

Id=15A Id=7.5A

25

Tj=150C
20
Tj=150C

Id=15A Id=7.5A

15
Id=15A Id=7.5A

Tj=25C
10

10 5 7.5
Tj=-40C

Tj=-40C

Id=15A Id=7.5A Id=15A Id=7.5A

5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

0 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Vin (V)

Vin (V)

PowerSO-10 Static Drain-Source On Resistance Vs. Id

Rds(on) (mOhm)
30

D2PAK, TO-220 & TO-247 Static Drain-Source On Resistance Vs. Id

Rds(on) (mOhm)
24 21

25

Vin=5V
20
Tj=150C

18 15 12

Tj=150C

15

Tj=25C
9 10
Tj=25C Tj=-40C

Tj=-40C
6

Vin=5V
3 0 0 5 10 15 20 25 30 35 0 4 8 12 16 20 24 28 32

Id (A)

Id (A)

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Transconductance
Gfs (S)
54

Transfer Characteristics
Idon (A)

Tj=-40C
48

50 45

Vds=13V
42 36 30

Tj=25C Tj=150C

Vds=13.5V
40 35 30

Tj=-40C

Tj=150C
25 20

24 18 15 12 6 0 0 4 8 12 16 20 24 28 32

Tj=25C
10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Id (A)

Vin (V)

Output Characteristics
Id (A)
55 50 45

Normalized On Resistance Vs. Temperature

Rds(on) (mOhm)
4 3.5

Vin=4V Vin=4.5V Vin=3.5V Vin=3V

3 2.5 2 1.5 1

Vin=5V Id=15A

40 35 30 25 20 15

Vin=2.5V
10
0.5

5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5

0 -50 -25 0 25 50 75 100 125 150 175

Vds (V)

Tc (C)

Turn On Current Slope

di/dt (A/us)
20 17.5 15 12.5 10 7.5 5

Turn On Current Slope

di/dt (A/us)
10 9

Vin=5V Vdd=15V Id=15A

8 7 6 5 4 3 2

Vin=3.5V Vdd=15V Id=15A

2.5 0 0 150 300 450 600 750 900 1050

1 0 0 125 250 375 500 625 750 875 1000 1125

Rg (Ohm)

Rg (Ohm)

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Input Voltage Vs. Input Charge
Vin (V)
8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175

Turn off drain source voltage slope

dV/dt (V/us)
160 140

Vds=12V Id=15A

120 100 80 60 40 20 0 0 150

Vin=5V Vdd=15V Id=15A

300

450

600

750

900

1050

Qg (nC)

Rg (Ohm)

Turn Off Drain-Source Voltage Slope

dV/dt (V/us)
160 140 120 100 80 60 40 20 0 0 150 300 450 600 750 900 1050

Switching Time Resistive Load

T (us)
40 35

td(off) Vdd=15V Id=15A Rg=4.7ohm tf tr

Vin=3.5V Vdd=15V Id=15A

30 25 20 15 10 5 0 0

td(on)

300

600

900

1200

1500

1800

2100

2400

Rg (Ohm)

Rg (Ohm)

Switching Time Resistive Load

T (ns)
1750

Normalized Input Threshold Voltage Vs. Temperature

Vinth (V)
2

1500

tr

Vdd=15V Id=15A Rg=4.7ohm td(off)

1.75 1.5 1.25

Vds=Vin Id=1mA

1250

1000 1 750

tf
500

0.75 0.5 0.25 0

250

td(on)
0 3 3.5 4 4.5 5 5.5 6 6.5 7

-50

-25

25

50

75

100

125

150

175

Vin (V)

Tc (C)

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Current Limit Vs. Junction Temperature
Ilim (A)
100 90 80 70 60 50 40 30 20 60 10 0 -50 -25 0 25 50 75 100 125 150 175 40 0 5 10 15 20 25 30 35 100

Step Response Current Limit

Tdlim (us)
180

Vin=6V Vds=13V

160

Vin=6V
140

120

80

Tc (C)

Vdd (V)

Derating Curve

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 MECHANICAL DATA

mm. DIM. MIN. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) 3.85 2.95 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93

P
Q Package Weight

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-247 MECHANICAL DATA

DIM. A D E F F3 F4 G H L L3 L4 L5 M Dia. 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 mm. MIN. 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 0.144 TYP MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10 MECHANICAL DATA

DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) (*)
(*) Muar only POA P013P

mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0 2 1.80 1.10 8 8 0.047 0.031 0 2 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232

inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8 8

0.10 A B

10

E2

E4

SEATING PLANE e
0.25

DETAIL "A"

C D = D1 = = = SEATING PLANE

A F A1

A1

L DETAIL "A"

P095A

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

D2PAK MECHANICAL DATA

DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35

P011P6

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

50 1000 532 5.5 31.4 0.75

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10 SUGGESTED PAD LAYOUT
14.6 - 14.9
B

TUBE SHIPMENT (no suffix)

CASABLANCA MUAR
C

10.8- 11 6.30

A A

0.67 - 0.73 1 2 3 4 5 10 9 8 7 6 1.27 0.54 - 0.6

9.5

All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length ( 0.5) Casablanca Muar 50 50 1000 1000 532 532 A B C ( 0.1) 0.8 0.8

10.4 16.4 4.9 17.2

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 24 1.5 1.5 11.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

D2PAK FOOTPRINT
A

TUBE SHIPMENT (no suffix)

C

16.90

12.20
1.60 3.50 9.75

5.08
B

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1) All dimensions are in mm.

50 500 532 6 21.3 0.6

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 60 30.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 16 1.5 1.5 11.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2004 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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