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Device Fabrication
Conclusions
2
RQE - 11/1/2011
Overview
Device Fabrication
Conclusions
3
RQE - 11/1/2011
Motivation
Many applications require compact, efcient electron sources
4
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1,2,+ 1345 63+ 7889
5* :;<=>()%+ ?* #@ A)(=B#C
D$%)> 3E$==$#F !#;G#;(&$#F
CCC*%H%(E>%I$J%=*J#E
Multi e-beam lithography Portable Vacuum Sources X-rays
Displays Terahertz Devices Ionizers/
Neutralizers
RQE - 11/1/2011
Physics of Electron
Sources
5
E
F
e
-
metal vacuum
E
F
e
-
metal
vacuum
E
x
x
V(x>0) = -qFx
(a) (b)
W
0 0
E
x
E
x
x = 0 x
Thermionic or Photoemisssion Field Emisssion
RQE - 11/1/2011
Physics of Electron
Sources
6
E
F
e
-
metal vacuum
E
F
e
-
metal
vacuum
E
x
x
V(x>0) = -qFx
(a) (b)
W
0 0
E
x
E
x
x = 0 x
Thermionic or Photoemisssion Field Emisssion
RQE - 11/1/2011
Field Emission Physics:
A two step process
In general, a self-aligned
structure is preferred for
maximum transmission
Emitter
Cone
Si
Substrate
Poly-Si
extraction
gate
Anode
Emitted
Electrons
RQE - 11/1/2011
Ball-In-Sphere
Electrostatics Model
9
Cross-sectional area
decreases
+
+
S
D
G
E Emitter
Drain
Source
Anode
Gate
n-type Silicon Substrate
x = 0
x = L
S
i
l
i
c
o
n
P
i
l
l
a
r
O
x
i
d
e
/
D
i
e
l
e
c
t
r
i
c
F
i
l
l
Emitter
(a) (b)
I
D
= I
DSS
[1 +V
DS
] = I
DSS
+G
OUT
V
DS
I
D
=
qA(x)n
e
1 +
e
v
sat
dV (x)
dx
2
dV (x)
dx
RQE - 11/1/2011
Prior Work
19
!
"!
#!
$!
%!
&!!
&"!
&#!
&$!
&%!
"!!
! "!! #!! $!! %!! &!!! &"!! &#!! &$!!
E
m
i
s
s
i
o
n
C
u
r
r
e
n
t
I
E
[
m
A
]
Gate VoItage V
G
[V]
(Linear) IV - 3kV Power SuppIy / 1k Resistor
&$!!'
&#!!'
&"!!(
Geometry
Parameters:
Pillar dimensions:
1!m x 1!m x 100
!m
Pitch: 10!m
Tip radius: <50nm
N
D
: 2.5x10
13
cm
-3
Pulse
Parameters:
10!s pulse width
and 10s period
Velsquez-Garca et al. TED 2011
RQE - 11/1/2011
Overview
Device Fabrication
Conclusions
20
RQE - 11/1/2011
Scaled Vertical Ungated
FET Simulation Results
Geometry:
100 nm x 100 nm x 10 !m
N
D
= 5x10
14
cm
-3
L ! " I
DSS
#, r
lin
!, r
o
!
Geometry:
100 nm x 100 nm x 10 !m
N
D
! " I
DSS
!, r
lin
#, r
o
#
22
RQE - 11/1/2011
Scaled Vertical Ungated
FET Simulation Results
Device Fabrication
Conclusions
24
RQE - 11/1/2011
Fabrication of Si
FEA-FETs
25
Photolithography
to define dots
a)
b)
c)
SiO
2
Si PR
e)
PR Removal,
oxidation sharpening
and oxide removal
d)
Rough tip formation and
pillar formation
Grow oxide
hardmask
RIE
to pattern hardmask
RQE - 11/1/2011
Completed FEA-FET
Structure
26
100 nm
Pillar Height: 10!m
Pillar Diameter: 0.11!m
Tip Radius: < 10nm
Pitch: 5!m
RQE - 11/1/2011
Overview
Device Fabrication
Conclusions
27
RQE - 11/1/2011
Current-Voltage Characterization
of Ungated FETs Without Emitters
28
# of
Pillars
I
DSS
/pillar
[pA]
V
DSS
[V]
G
LIN
/pillar
[pS]
G
O
/pillar
[pS]
1 8.5 0.057 150 0.33
4M 4.65 0.047 100 0.065
Single FET 4M FET Array
RQE - 11/1/2011
Field Emission
Characterization Setup
29
Ball anode
Insulating
polymer
spacer
Device
under
test
Clamp
Probe
Perforated
extraction grid
Schematic
Cross-section
Device
Photo
+1100 V
+V
GS
0 V
RQE - 11/1/2011
Field Emission I-V
Characterization
30
1.0E-13
1.0E-11
1.0E-09
1.0E-07
1.0E-05
1.0E-03
0 100 200 300 400 500 600 700
I
(
A
)
V
G
(V)
y = -2942.6x - 19.204
R = 0.9907
y = -3142.5x - 23.588
R = 0.98148
-35
-33
-31
-29
-27
-25
-23
-21
0.001 0.002 0.003 0.004 0.005 0.006
L
N
(
I
/
V
G
2
)
1/V
G
Anode Gate
b
FN
3143 2942
(cm
-1
) 1.69x10
5
1.80x10
5
r (nm) 59 nm 55 nm
-b
FN
Gate
Anode Anode
Gate
r
1
0.95 6.8310
7
3/2
b
FN
V
A
= +1100 V
4.05 eV
RQE - 11/1/2011
Field Emission I-V
Characterization
31
-35
-33
-31
-29
-27
-25
-23
-21
0.001 0.002 0.003 0.004 0.005 0.006 0.007
L
N
(
I
/
V
G
2
)
1/V
G
1.0E-13
1.0E-11
1.0E-09
1.0E-07
1.0E-05
1.0E-03
0 100 200 300 400 500 600 700 800 900
I
(
A
)
V
G
(V)
Gate
Ballasting?
Anode Gate
b
FN
3143 2942
(cm
-1
) 1.69x10
5
1.80x10
5
r (nm) 59 nm 55 nm
Anode
Anode
Gate
r
1
0.95 6.8310
7
3/2
b
FN
V
A
= +1100 V
4.05 eV
RQE - 11/1/2011
Analysis of Field
Emission Data
Sensitivity analysis:
Device Fabrication
Conclusions
33
RQE - 11/1/2011
Conclusions
Lifetime analysis
Pillar height: 10 !m
Pitch: 5 !m
# of Emitters: 5
Pillar height: 10 !m
Pitch: 5 !m
# of Emitters: 5