2N/PN SST4416 2N4416A

N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER

FEATURES Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE (400 MHz) EXCEPTIONAL GAIN (400 MHz) ABSOLUTE MAXIMUM RATINGS @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain or Gate to Source 2N4416 Gate to Drain or Gate to Source 2N4416A -30V -35V *Optional Package For 2N4416 10mA 300mW -55 to +150 C -55 to +135 C
D S
1

4 dB 10 dB 2N SERIES PN SERIES* SST SERIES

SOT-23 TOP VIEW
1 3 2

ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL BVGSS VGS(off) IDSS IGSS gfs gos Ciss Crss Coss en CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage 2N/PN/SST4416 2N4416A 2N/PN/SST4416 2N4416A 2N PN/SST 4000 -2.5 5 MIN -30 -35 -6 -6 15 -0.1 -1.0 7500 100 0.8
2

TYP

MAX

UNITS

CONDITIONS IG = -1A, VDS = 0V

V VDS = 15V, ID = 1nA mA nA S VDS = 15V, VGS = 0V VGS = -20V, VDS = 0V VGS = -15V, VDS = 0V VDS = 15V, VGS = 0V, f = 1kHz

Gate to Source Saturation Current Gate Leakage Current Forward Transconductance Output Conductance Input Capacitance
2

Reverse Transfer Capacitance Output Capacitance

2

4 2 6

pF nV/Hz

VDS = 15V, VGS = 0V, f = 1MHz VDS = 10V, VGS = 0V, f = 1kHz

Equivalent Input Noise Voltage

Linear Integrated Systems

4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Doc 201133 06/19/13 Rev#A9 ECN# 2N4416

HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL giss biss goss boss Gfs Gps NF CHARACTERISTIC Input Conductance Input Susceptance
2

100 MHz MIN MAX 100 2500

2

400 MHz MIN MAX 1000 10000 100 4000 4000 10

UNITS

CONDITIONS

Output Conductance Output Susceptance Power Gain

2 2

75 1000
2

VDS = 15V, VGS = 0V

Forward Transconductance Noise Figure

18 2

dB

VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA, RG = 1k

SOT-23
0.89 1.03

1
1.78 2.05

0.37 0.51

2.80 3.04

2
1.20 1.40 2.10 2.64 0.085 0.180

0.89 1.12

0.013 0.100

0.55

DIMENSIONS IN MILLIMETERS

*Dimensions in inches

NOTES
1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Not production tested, guaranteed by design.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protg of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Doc 201133 06/19/13 Rev#A9 ECN# 2N4416