Gate Array Signalling Information Detection using a Semiconductor Optical Amplifier

John OCarroll Michael J. Connelly

Abstract This paper discusses detection using a Semiconductor Optical Amplifier. It looks at the interactions within the device, which make detection possible. Its application as a detector for switching control signalling in an SOA Gate array is considered.

I. Introduction The basic function of the Semiconductor Optical Amplifier (SOA) is to amplify laser light in optical networks. However research has shown that SOAs are much more versatile devices and hold much promise as functional devices in all optical networks. Some of these functions include optical switching [1], optical logic gates [2, 3], modulation, wavelength conversion [4, 5] and detection [6, 7]. This paper will concentrate on detection, and its application in controlling the switching functions of an SOA optical switch gate array. As mentioned previously an SOA can be used as an optical switch. The SOA optical switch can be used in many types of optical network. In a routing network these switches can be placed in a gate array. Depending on where the payload is to be sent the appropriate switch in the array is turned on. For the array controller to determine which switch to turn on it requires signalling information and a means to detect it. An SOA detector can be used for this purpose. II. SOA Detection Properties Detection of a signal can be achieved when the device is turned off and also when it is turned on. In both of these the detection is achieved by different interactions in the device material. In the off state laser light enters the cavity, photons interact with the material in a process called absorption. When the material absorbs light it results in the generation of electron hole pairs, which in turn results in the generation of a current. This current is passed through a resistance and can be detected as a voltage. In this type of detection the processes of spontaneous emission and stimulated emission does not take place since both of these processes require injection of carriers. Detection in the on state is different from that in the off state. As the

input light intensity changes the carrier density also changes. This has a proportional effect on the quasi-Fermi levels and thus the diode voltage [6, 7]. For this type of detection stimulated emission and spontaneous emission are the main processes involved. When light photons enter the SOA additional photons are generated through the process of stimulated emission. Spontaneous emission is also present, however this is unwanted as it contributes to noise on the optical signal and also, importantly from a detection point of view, on the electrical output. In this situation the light is amplified whilst the signal is simultaneously detected.
Bias Current Bias Tee
Inductor Blocking Capacitor

Detected Signal
Amp

Electrical Output

Optical Input

SOA

Optical Output

Figure 1. Semiconductor Optical Amplifier Detector.

A numerical model of the SOA can be used to simulate the detector. Some of the main equations used in the model are shown here. First we consider the carrier density n(z) rate equation at a point z along the amplifier axis [6]. Since as stated previously variations in the carrier density results in variations in the junction voltage.
dn(z) I = R(n( z)) {gm (z)Nsig (z) + 2 gm (v, z)(Nv + (z) +Nv ( z))} dt eV A v

(1)

Here I is the amplifier bias current, e the electronic charge, V the active region volume, the optical confinement factor, A the active region cross sectional area, gm the material gain, Nsig the signal photon rate (per second) and Nv+ and Nv- the spontaneous photon rates travelling positive and negative along the amplifier axis respectively. From this it can be seen that as Nsig

increases the carrier density decreases. Also it shows that the spontaneous emission reduces the carrier density. The voltage at the point z along the amplifier axis can be obtained from equation 2 [6].
v( z ) = e 1 ( E fc (n( z )) E fv (n( z )) + E g (n( z )) (2)

results in an attenuation of the signal and the use of more components. III. Signalling Information Detection In routing networks a method of determining which nodes in the gate array to turn on and off at the appropriate time is required. To achieve this, signalling information is transmitted before the information packet. After this is decoded the network determines which nodes to turn on and off. Before light enters the gate array it is amplified by a control SOA. This SOA has two functions, to amplify the input laser light and to detect signalling information. Amplification is necessary because at the arrays input is a coupler, which splits the light between the SOA switches in the array. For example if an 8 terminal coupler is used the signal applied to each switching SOA is attenuated by 9dB. Also a fibre delay loop may be used to allow for the processing of the signalling information. Figure 2 shows a method to achieve signalling information detection and switching control of a gate array. The control information is modulated on to a subcarrier using a modulator. This modulation is performed in the electrical domain. The next task is to modulate the laser light with this modulated subcarrier. A lithium niobate external modulator is used to achieve this. At the input of the gate array is the control SOA. Its function as stated previously is to detect the signal whilst simultaneously amplifying it. A bias tee taps off the detected subcarrier, which is then amplified. Amplification is necessary as the tapped off signal is very small. As the signal of interest is the control signal all other signals are filtered out using a bandpass filter. The filtered signal is then applied to a demodulator. The demodulated signal is sampled at the correct frequency to extract the original signalling bit stream. This bit stream is the input to a decision circuit. Its task is to turn on the appropriate SOA in the array. This decision process is based on the fact the each SOA in the gate array has its own address. To ensure that the signalling information is available for nodes following the array, a method to ensure that the destination SOA switch in the array is on when the signalling information reaches it is required. The simplest way to achieve this is to use a fibre delay loop. The delay is sufficient to allow for the address information to be processed by the control circuitry and for the current driver to turn the SOA fully on.

Here Efc and Efv are the quasi fermi levels in the conduction band and valence band respectively. Eg is the band gap energy. The quasi fermi levels may be approximated using the Nilsson approximation, this approximation may be found in reference 8. In the model the SOA is divided into sections as opposed to using spatially averaged values of carrier density and photon density. Dividing the SOA into sections gives more accurate results because it takes into account the longitudinal non-uniformity of the carrier density. This nonuniformity is created as follows, as the light propagates through the SOA it is amplified therefore the term Nsig increases as it travels through the amplifier. As Nsig propagates through the device it increases almost exponentially [9]. The spontaneously emitted photons have a similar effect. This means section 1 will have a larger carrier density than section 2 and section 2 will have a larger carrier density than section 3 and so on. The value of Nsig as it propagates through the amplifier can be obtained from the following differential equation [6].
dN sig dz = (gm(vs , n( z )) s ) N sig

(3)

where s is the material loss coefficient. Nsig has a boundary condition

N sig (0) = Pin hv sig

(4)

where Pin is input signal power and hvsig the signal photon energy. In this application the portion of the detected signal of interest is the ac portion. To obtain this a bias tee is used as shown in figure 1. The detected signal is then amplified. The advantage of this method over conventional methods is that the optical transmission path is not broken [6]. To achieve detection without using this method a portion of the signal would have to be split of using a coupler and fed into a photodiode. This

Control Signal Data in Electrical Path Optical Path Drive Electronics Isolator Tunable Laser Modulator Optical delay Attenuator Bias Tee SM Fibre Modulator

Current Driver Bias Current

Inductor Blocking Capacitor

Detected Signal
Amp

Control SOA

Demodulator Sampler Serial to Parallel converter

SOA Gate Array Switching Control Circuit To other SOAs in array 8 Terminal Coupler Current Driver Switching SOA

Decision Logic Circuit

Current Driver Switching SOA

To other SOAs In array

Figure 2. SOA Detector used to control the switching operation of an SOA gate array

IV.
1.

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