MCCvu & M8L

CLL133
Wenung Pou
2013-12-03
compound semlconducLor growLh Lechnlques
The three basic and most commonly used compound
semiconductor growth techniques:


Liquid Phase Epitaxy (LPE)
Metal Organic Chemical Vapour Deposition (MOCVD)
Molecular Beam Epitaxy (MBE)
MCCvu
(MeLal Crganlc Chemlcal vapor ueposluon)
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4
This involves the forced convection of the metal organic vapour species over a heated
substrate. Those molecules striking the heated crystal release the desired species,
resulting in crystal growth. The chemical process involved is quite simple in that an alkyl
compound for the group III element and a hydride for group V element decompose in the
500 C to 800 C temperature range to form the III-V compound semiconductor.
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Metal Organic Vapor Phase Epitaxy MOVPE


Common sources for group V elements are AsH3 or PH3 while for group III these are trymethyl
gallium (TMGa / Ga(CH3)3), trimethyl aluminium (TMAl / Al(CH3)3) and trimethyl indium (TMIn / In
(CH3)3) or triethyl gallium (TEGa / Ga(C2H5)3), triethyl aluminium (TEAl / Al(C2H5)3), and triethyl
indium (TEIn / In(C2H5)3) respectively.
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MOCVD mechanism
This involves the forced convection of the metal organic vapour species over a
heated substrate. Those molecules striking the heated crystal release the desired
species, resulting in crystal growth. The alkyl compound for the group III element and
a hydride for group V element decompose in the 500 C to 800 C temperature range
to form the III-V compound semiconductor.
GaN could be grown in a reactor
on a substrate by introducing
Trimethygallium ((CH
3
)
3
Ga) and
ammounium (NH
3
). Formation of
the epitaxial layer occurs by final
pyrolysis of the constituent
chemicals at the substrate
surface.
http://en.wikipedia.org/wiki/Metalorganic_vapour_phase_epitaxy
MOCVD Growth of GaN
1MCa molecules
deposlL and reacL
on surface
nP3 molecules reacL
on surface, leavlng n
Lo reacL and form
Can and CP4
MCCvu: Worklng condluons
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This takes place not in a vacuum, but from the gas phase at moderate
pressures (10 to 760 Torr). As such, this technique is preferred for the
formation of devices incorporating thermodynamically metastable alloys, and it
has become a major process in the manufacture of optoelectronics.

T too high: desorption, nitrogen vacancies.
T too low: impurities incorporation, low surface mobility, structure defects;
Usually temperature ~1050 C
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Advantages

Faster growth than MBE, can be a few microns per hour; multi-wafer capability
easily achievable
Higher temperature growth; growth process is thermodynamically favorable

Disadvantages

Difficult to monitor growth rate exactly (no Rheed possible due to higher
pressure)
Not as abrupt a process as MBE due to gas flow issues and memory effects
Toxic gases are to be handled
8eneLs and urawbacks of MCCvu
!"#$%&#'( *$'+ ,-./'01
2!*,3
WhaL ls LplLaxy?
LplLaxy: ueposluon and growLh of
monocrysLalllne sLrucLures/layers.

Creek rooL: !"# means above and $%&#'
means ordered.
Crown from: (%'!)*' or +#,*#- precursors.
SubsLraLe acLs as a seed crysLal: lm follows
LhaL

LplLaxlal growLh resulLs ln monocrysLalllne
layers dlerlng from deposluon whlch glves
rlse Lo polycrysLalllne and bulk sLrucLures.
LplLaxy Lypes:
PomoeplLaxy: SubsLraLe & maLerlal are of same
klnd.
(Sl-Sl)
PeLeroeplLaxy: SubsLraLe & maLerlal are of
dlerenL klnds. (Ca-As)
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* Veeco Instruments 2008, http://www.veeco.com
** Dan Connelly, 2007, http://oz.irtc.org
MBE growth mechanism *
MBE growth mechanism **
M8L: Worklng rlnclple
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A typical MBE system*
* Basics of molecular beam epitaxy (MBE) by Fernando Rinaldi
! Epitaxial growth: Due to the
interaction of molecular or
atomic beams on a surface of a
heated crystalline substrate.
! The solid source materials sublimate
! They provide an angular distribution of
atoms or molecules in a beam.
! The substrate is heated to the necessary
temperature.
! The gaseous elements then condense on
the wafer where they may react with each
other.
Molecular Beam Epitaxy**
** http://iramis.cea.fr/en/Phocea/Vie_des_labos/Ast/ast_sstechnique.php?id_ast=494
! Atoms on a clean surface are free to move until
finding correct position in the crystal lattice to
bond.
! Growth occurs at the step edges formed: More
binding forces at an edge.
! The term beam means the evaporated atoms
do not interact with each other or with other
vacuum chamber gases until they reach the
wafer.
M8L: Worklng Condluons
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" The mean free path (!) of the
particles > geometrical size of
the chamber (10
-5
Torr is
sufficient)
" Ultra-high vacuum (UHV= 10
-11
Torr) to obtain sufficiently clear
epilayer.
" Gas evolution from materials has to be as low as possible. Pyrolytic
boron nitride (PBN) is chosen for crucibles (Chemically stable up to
1400

C)
" Molybdenum and tantalum are widely used for shutters.
" Ultrapure materials are used as source.
Mean free path for Nitrogen molecules at 300 K *
* Basics of molecular beam epitaxy (MBE) by Fernando Rinaldi
M8L: 8esulLs and ConLrol Mechanlsms
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RHEED oscillations *
* Basics of molecular beam epitaxy (MBE) by Fernando Rinaldi
! Control of composition and doping of the growing structure at monolayer
via computer controlled shutters
! Growth rates are typically on the order of a few A/s and the beams can be
shuttered in a fraction of a second allowing nearly atomically abrupt transition
from one material to another.)
! Independent heating of material sources
! RHEED (Reflection High Energy Electron Diffraction) for monitoring the
growth of the crystal layers.
! Mass spectrometer for monitoring the residual gases and checking
source beams for leaking
! A cryogenic screening around the substrate as a pump for residual
gases.
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MBE Growth of GaN
GaN molecular beam epitaxy (MBE) growth is a non-equilibrium process where a
Ga vapor beam from an effusion cell and an activated nitrogen beam from a plasma
source are directed toward a heated substrate. Under suitable conditions, layer-by-
layer deposition of Ga and N atomic planes is possible.
8eneLs and urawbacks of M8L
Advantages Disadvantages
# Clean surfaces, free of an oxide layer # Expensive (10
6
$ per MBE chamber)
# In-situ deposition of metal seeds,
semiconductor materials, and dopants
# ATG instability
# Low growth rate (1m/h) # Very complicated system
# Precisely controllable thermal evaporation # Epitaxial growth under ultra-high vacuum
conditions
# Seperate evaporation of each component
# Substrate temperature is not high
# Ultrasharp profiles
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Appllcauons
novel sLrucLures as quanLum devlces
Slllcon/lnsulaLor/MeLal Sandwlches
Superlamces
MlcroelecLronlc uevlces

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TEM image of MBE Growth of Ultra-Thin InGaAs/AlAsSb Quantum Wells*
* http://www.photonics.ethz.ch/research/core_competences/technology/epitaxial_growth/mbe
Concluslons of M8L
1yplcally ln ulLra-hlgh vacuum
ueposluon raLes are very low (1monolayer/second)
very well conLrolled (Shuuerlng: 0.1s)
Crow lms wlLh good crysLal sLrucLure
Cen use muluple sources Lo grow alloy lms
ueposluon raLe ls so low LhaL subsLraLe LemperaLure
doesn'L need Lo be as hlgh
Lxpenslve
SophlsucaLed sysLem
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M8L vs. MCCvu
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