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NTE2393 MOSFET NChannel Enhancement Mode, High Speed Switch TO3P Type Package

Description: The NTE2393 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 500V for OffLine SMPS D High Current: 9A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls G S D

Absolute Maximum Ratings: DrainSource Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V DrainGate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25, C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A TC = +100, C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Dissipation (TC = +25, C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25, C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/, C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150, C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65, to +150, C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83, C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275, C Note 1. Pulse width limited by safe operating area.
Rev. 1013

Electrical Characteristics: (TC = +25, C unless otherwise specified)


Parameter OFF Characteristics DrainSource Breakdown Voltage ZeroGate Voltage Drain Current V(BR)DSS ID = 250mA, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 400V, TC = +125, C GateBody Leakage Current ON Characteristics (Note 2) Gate Threshold Voltage Static DrainSource On Resistance VGS(th) RDS(on) VDS = VGS, ID = 250mA VGS = 10V, ID = 4.5A VGS = 10V, ID = 4.5A, TC = 100, C Dynamic Characteristics Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics TurnOn Time Rise Time TurnOff Delay Time Fall Time Source Drain Diode Characteristics SourceDrain Current SourceDrain Current (Pulsed) Forward ON Voltage Reverse Recovery Time ISD ISDM VSD trr Note 2 ISD = 9A, VGS = 0 IDS = 9A, VGS = 0, di/dt = 100A/ms 420 9 36 1.15 A A V ns td(on) tr td(off) tf VDD = 250V, ID = 4.5A, RI = 4.7W, VI = 10V 30 40 130 30 40 60 170 40 ns ns ns ns gfs Ciss Coss Crss VDS = 25V, ID = 4.5A VDS = 25V, VGS = 0, f = 1MHz 5 280 170 mho pf pf pf 1600 1900 2 4 0.7 1.4 V W W IGSS VDS = 0, VGS = 20V 500 250 1000 100 V mA mA nA Symbol Test Conditions Min Typ Max Unit

Note 2. Pulse width limited by safe operating area. Note 3. Pulsed: Pulse Duration = 300ms, Duty Cycle 1.5%

.190 (4.82)

.615 (15.62)

D .787 (20.0)

.591 (15.02)

.126 (3.22) Dia

.787 (20.0)

.215 (5.47)

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