SVD2N60T

2A, 600V N-Channel MOSFET

GENERAL DESCRIPTION
2

SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin
TM

S1 3 1.Gate 2.Drain 3.Source

structure DMOS technology. The improved planar stripe cell

and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
12 3 TO-220-3L

FEATURES
2A,600V,RDS(on)(typ.)=4.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability

ORDERING SPECIFICATIONS
Part No. SVD2N60T Package TO-220-3L Marking SVD2N60T Shipping 50Unit/Tube

ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS EAR TJ Tstg -55 -55 Value 600 30 2.0 8 44 0.22 120 5.4 +150 +150 Unit V V A A W W/C mJ mJ C C

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THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol R JC R JA Value 2.87 100 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)

Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=2.0A, VGS=10V (Note 2,3) VDD=300V,ID=2.0A, RG=25 Test conditions VGS=0V, ID=250A VDS=600V, VGS=0V VGS=30V, VDS=0V VGS= VDS, ID=250A VGS=10V, ID=1.0A VDS=25V,VGS=0V, f=1.0MHZ Min. 600 --2.0 -----------Typ. ----4.0 320 30 3 13 12 73 14.3 9.3 2.0 3.3 Max. -1.0 100 4.0 4.6 380 45 5.6 30 60 ns 100 70 13 --nC pF Unit V A nA V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=56mH, IAS=2.0A,VDD=50V,RG=25,starting TJ=25C; Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=2.0A,VGS=0V IS=2.0A,VGS=0V, dIF/dt=100A/S Min. -----Typ. ---230 1.0 Max . 2 8.0 1.4 --A V ns C Unit

2. Pulse Test: Pulse width 300 s,Duty cycle 2%; 3. Essentially independent of operating temperature.

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NOMENCLATURE

TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V

Figure 2. Transfer Characteristics

100.00

10.00
4.5V

1.0

150

1.00
25 -55

0.10
Note: 1. 250 s Pulse Test 2. TC=25 C

Note: 1.V GS=40V 2. 250 s pulse test

0.1 1 10

0.01 0 2 4 6 8 10

VDS Drain-source voltage[V]

VGS Gate-Source Voltage [V]

Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage

10.0

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
10.0

8.0

VGS=10V VGS=20V
1.0

6.0

4.0

150

25
Note: 1.VGS=0V 2. 250 s pulse test

2.0

Note:TJ=25 C
0.0 0.0 1.0 2.0 3.0 4.0 5.0

0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

ID Drain Current [A]

VSD Source-Drain Voltage [V]

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BVDSS(Normalized) Drain-Source Breakdown Voltage Capasistance [pF] RDS(ON) (Normalized) Drain-Source On-Resistance VGS Gate-Source Voltage [V]

TYPICAL CHARACTERISTICS (continued)

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TYPICAL TEST CIRCUIT

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SVD2N60T

PACKAGE OUTLINE
TO-220-3L(One) UNIT: mm

TO-220-3L Two

UNIT: mm

15.1~15.9

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13.10.5

3.95MAX

6.10~6.80

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