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The Superposition theorem is essentially based on the concept of A. duality B. linearity C. reciprocity D. non-linearity ANSWER: B Cells are connected in parallel in order to increase the volt age available. reduce cost of wiring. increase the current available. reduce the time required to fully charge them after use ANSWER: C The power factor of a purely resistive circuit is zero. unity. lagging. leading. ANSWER: B The power taken by a 3-phase load is given by the expression 3VL IL cos f . 3 VL IL sin f . 3 VL IL cos f . 3 VL IL sin f . ANSWER: C Which of the following generating stations has the minimum running cost hydro-electric station. nuclear power station. thermal power station. diesel power plant. ANSWER: A Which of the following motors has a high starting torque? ac series motor. dc series motor. induction motor. synchronous motor. ANSWER: B The effect of increasing the length of the air gap in an induction motor will be to increase power factor. speed. magnetising current. air-gap flux. ANSWER: C The combined resistance of two equal resistors connected in parallel is equal to One half the resistance of one resistor. Twice the resistance of one resistor. Four times the resistance of one resistor. One fourth the resistance of one resistor.

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ANSWER: A 1. 1. 2. 3. 4. Superposition theorem can be applicable only to circuits having _________ elements. Non- linear Passive Resistive Linear bilateral ANSWER: D The Q- factor of a coil is given by Its power factor cosF . Ratio of max. energy stored & energy dissipated per cycle.. Reciprocal of its power factor. Ratio R/ Z. ANSWER: C The efficiency of a transformer is maximum when It runs at half full load. It runs at full load. Its Cu loss equals iron loss. It runs overload. ANSWER: C The unit of inductance is Ohm. Mho. Farad. Henry. ANSWER: D Thevenins equivalent circuit consists of _________. Series combination of RTh, E Th and RL. Series combination of RTh, E Th. Parallel combination of RTh, ETh. Parallel combination of RTh, ETh and RL. ANSWER: B An atom's atomic number is determined by the number of: neutrons minus protons protons electrons neutrons ANSWER: B In an R L C circuit, the phas e of the current with respect to the circuit voltage will be_________. Leading. Same. Lagging. Depends upon the value of Land C. ANSWER: D

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proton and electron electron and prot on atom and nucleus electron and element ANSWER: B A voltmeter is used: to measure current in series with the circuit in parallel wit h the circuit to measure coulombs ANSWER: C Q factor of an inductive coil is given by R/Z 2fr/R 2fL/R lr/l ANSWER: B If the readings of the two wattmeters in the 2 -wattmeter method of power measurement are 4.5 kW and 3.5 kW respectively and the latter reading has been obtained after reversing the current coil of the wattmeter. What will be the total power in kW? 1 3.5 4.5 8 ANSWER: A If the current in a circuit equals 0 A, it is likely that the voltage is too high resistance is too low circuit has a short circuit is open ANSWER: D What are the unit and symbol for current Ampere, A Coulomb, I Ampere, Q Ampere, I ANSWER: D A network that does not have either voltage or current sources is called Active network. Passive net work. Resistive network. Dummy net work. ANSWER: B The Power- factor at res onance in R-L-C circuit is Zero. Unity. 0.5 lagging.

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0.5 leading. ANSWER: B Resistance of a wire is r ohms. The wire is stretched to double its length, then its resistance in ohms is r/2 4r 2r r/4 ANSWER: B Which of the following will remain the same in all parts of a series circuit? Voltage Current Power Resistance ANSWER: B Which one of the following statements is not true? Capacitance is a measure of a capacitors capability to store charge. A capacitor offers high impedance to ac but very low impedance to dc. A capacitor is also used as bypass capacitor. Capacitors are used to couple alternating voltages from one circuit to another and at the same time to block dc voltage from reaching the next circuit. ANSWER: B In a Zener diode large reverse current is due to collision. presence of impurities. rupture of bonds lower resistance in reverse biased region. ANSWER: D JFE T has main drawback of having low input impedance. having high output impedance. being noisy. small gain-bandwidth product ANSWER: D Which voltage sourc e converts chemical energy to electrical energy ? Electrical generator Battery Solar cell Electronic power supply ANSWER: B One coulomb passing a point in one second is one: ampere volt ohm charge ANSWER: B

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How many valence shell electrons are there in semiconductor at oms? 6 8 4 2 ANSWER: C For thermionic emission a material with high work function is preferable. a material with low work function is preferable. the work function of the material has no importanc e. None of these is true. ANSWER: B Which unit of charge contains 6.25 1018 electrons? An ampere A coulomb A volt A joule ANSWER: B A switch is a device that: short circuits complex circuits holds a fuse has double poles opens or completes a current path ANSWER: D The CE configuration amplifier circuits are preferred over CB configuration amplifier circuits because they have Lower amplification factor. Larger amplification factor. high input resistance and low output resistance. none of these. ANSWER: B Which electronics material opposes the movement of free electrons? Conductor Insulator Semiconductor Element ANSWER: B Current is considered as the movement of: electrons protons charge nuclei ANSWER: A The colour band sequence of a resistor is grey, Blue, gold, and gold. The range in which its value must lie so as to satisfy the tolerance specified is bet ween 7.5 and 8.5 3.12K and 5.22K

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10.3K and 12.31K 8.17 and 9.03 ANSWER: D In an N-type semiconductor, the concentration of minority carriers mainly depends upon the doping technique. the number of donor atoms. the temperature of the the quality of the intrinsic material,Ge or Si. ANSWER: B A basic electric circuit is made up of what components? A load, a resistor, and a conductive path for current A voltage source, a load, and a conductive path for current A voltage source, a conductive path for current, and a battery A conductive path for current, a battery, and a copper wire ANSWER: B A short circuit will have: a small current flow a large current flow no current flow some current flow ANSWER: B Which of the following statements is true? Unlike charges repel and like charges attract. Like charges repel and unlike charges attract. Unlike charges attract and like charges attract. Like charges repel and unlike charges repel. ANSWER: B When forward bias is applied to a junction diode, it increases the potential barrier. decreases the potential barrier. reduces the majority-carrier current to zero. reduces the minority-carrier current to zero. ANSWER: B A UJT contains four pn junctions three pn junctions two pn junctions one pn junction ANSWER: D Which of the following components are all active components? A resistor and a capacitor. A microphone, a LCD and a Thyrat ron. An electric bulb, a transformer and a varactor diode. An SCR, a vacuum diode and an LE D. ANSWER: D Doping materials are called impurities becaus e they

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Decrease the number of charge carriers. Change the chemical properties of semiconductors. Make semiconductors less than 100 percent pure. Alter the crystal structures of the pure semiconductors ANSWER: B A valanche breakdown is primarily dependent on the phenomenon of Collision Doping Ionisation Recombination ANSWER: D The main reason why electrons can tunnel through a P-N junction is that They have high energy. Barrier potential is very low. Depletion lay er is extremely thin. Impurity level is low. ANSWER: C If a change in base current does not change the collector current, the transistor amplifier is said to be Saturated. Cut-off. Critical. Complemented. ANSWER: A The extremely high input impedance of a MOSFE T is primarily due to the Absence of its channel. Negative gate-source voltage. Depletion of current carriers. Extremely small leakage current of its gate capacitor. ANSWER: A After firing an S CR, the gating pulse is removed. The current in the SCR will Remains the same. Immediately fall to zero. Rise up. Rise a little and then fall to zero. ANSWER: A A device whose characteristics are very close to that of an ideal voltage source is a vaccum diode. a DIA C. a zener diode. a FET. ANSWER: C The forbidden energy gap in semiconductors lies just below the valance band lies just above the conduction band lies between the valence band and the conduction band is the same as the valence band

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ANSWER: C 1. 1. 2. 3. 4. The barrier potential for a Ge P N junction is 0.6V. 0.3V. 0.1V. 0.5V. ANSWER: B In a B JT, if the emitter junction is reverse-biased and the collector junction is reverse -bias ed, it is said to operat e in in active region in saturation region in cut-off region none of the above ANSWER: C The resistance between bases of a UJT is typically in the range of 2 to 3 K 5 to 10 K 15 to 20 K 18 to 20 K ANSWER: B With increasing temperature, the resistivity of an intrinsic semiconductor decreases. This is because, wit h the increase of temperature The carrier concentration increases but the mobility of carriers decreases. Both the carrier concentration and mobility of carriers dec reases. C. The carrier concentration decreases, but the mobility of carriers increases. D. The carrier concentration remains the same but the mobility of carriers decreases. ANSWER: A The extremely high input impedance of a MOSFE T is Primarily because of Absence of its channel Depletion of current carriers Extremely small leakage current of its gate capacitor Negative VGS ANSWER: A

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