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SUD45P03-15

Siliconix

P-Channel 30-V (D-S), 150_C MOSFET


Product Summary
VDS (V)
30 30

rDS(on) (W)
0.015 @ VGS = 10 V 0.024 @ VGS = 4.5 V

ID (A)a
"13 "8
S

TO-252

G Drain Connected to Tab G D S

Top View Order Number: SUD45P03-15 D P-Channel MOSFET

Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

Limit
30 "20 "13 "8 "100 13 70 4a 55 to 150

Unit
V

W _C

Thermal Resistance Ratings


Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Case

Symbol
RthJA RthJC

Typical

Maximum
30 1.8

Unit
_C/W

Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors

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SUD45P03-15
Siliconix Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VDS = 5 V, VGS = 4.5 V VGS = 10 V, ID = 13 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 13 A, TJ = 125_C VGS = 4.5 V, ID = 13 A Forward Transconductance b gfs VDS = 15 V, ID = 13 A 20 50 20 0.012 0.018 0.020 0.015 0.026 0.024 S W A 30 V 1.0 "100 1 50 nA mA

Symbol

Test Condition

Min

Typa

Max

Unit

On State Drain Currentb On-State

ID(on) D( )

Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.33 W ID ^ 45 A, VGEN = 10 V, RG = 2.4 W VDS = 15 V, VGS = 10 V, ID = 45 A VGS = 0 V, VDS = 25 V, F = 1 MHz 3200 800 280 50 14 6.2 13 10 50 20 20 20 100 40 ns 125 nC pF

Gate-Drain Chargec Turn-On Delay Timec Rise Timec

Turn-Off Delay Timec Fall Timec

Source-Drain Diode Ratings and Characteristic (TC = 25_C)


Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 45 A, VGS = 0 V IF = 45 A, di/dt = 100 A/ms 1.0 55 100 1.5 100 A V ns

Source-Drain Reverse Recovery Time

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors

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SUD45P03-15
Siliconix

Typical Characteristics (25_C Unless Otherwise Noted)


100 VGS = 10, 9, 8 V 80 I D Drain Current (A) 60 40 20 3V 0 2V 0 2 4 6 8 10 0 5V I D Drain Current (A)

Output Characteristics
7V 6V

80

Transfer Characteristics
TC = 55_C

60

25_C 125_C

40

4V

20

VDS Drain-to-Source Voltage (V) 50 40 g fs Transconductance (S) 30 20 10 0

VGS Gate-to-Source Voltage (V) 0.05 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V 0.01 0

Transconductance
TC = 55_C 25_C rDS(on) On-Resistance ( W )

On-Resistance vs. Drain Current

125_C

10

20

30

40

50

60

20

40

60

80

100

ID Drain Current (A) 4500 3600 C Capacitance (pF) 2700 1800 900 0 Crss Coss

ID Drain Current (A) 10 VGS Gate-to-Source Voltage (V) 8 6 4 2 0 VDS = 15 V ID = 45 A

Capacitance

Gate Charge

Ciss

10

15

20

25

30

10

20

30

40

50

VDS Drain-to-Source Voltage (V)

Qg Total Gate Charge (nC)

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors

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SUD45P03-15
Siliconix

Typical Characteristics (25_C Unless Otherwise Noted)


2.0 1.6 1.2 0.8 0.4 0 -50 -25

On-Resistance vs. Junction Temperature


100 VGS = 10 V ID = 45 A I S Source Current (A)

Source-Drain Diode Forward Voltage

rDS(on) On-Resistance ( W ) (Normalized)

TJ = 150_C TJ = 25_C 10

25

50

75

100

125

150

1 0 0.3 0.6 0.9 1.2 1.5 VSD Source-to-Drain Voltage (V)

TJ Junction Temperature (_C)

Thermal Ratings
20 16 I D Drain Current (A) 12 8 4 0 I D Drain Current (A)

Maximum Drain Current vs. Ambiemt Temperature

Safe Operating Area


500

100 Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 TA = 25_C Single Pulse 100 ms 1s dc 0 25 50 75 100 125 150 0.1 0.1 1 10 100 VDS Drain-to-Source Voltage (V)

TA Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 104 103 102 101

Normalized Thermal Transient Impedance, Junction-to-Ambient

10

30

Square Wave Pulse Duration (sec)


Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors

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