LAB 1

SILICON DIODES CHARACTERISTICS

LEARNING OBJECTIVES By the end of this experiment, you should be able to: Measure and plot the forward and reverse-biased characteristics for a diode. MATERIALS Resistors: Components:

1 1

330 , 1 1.0M , 560 5W 1N4148 or equivalent, 1 1N4740

EQUIPMENT Tektronix PS280 DC Power Supply Fluke 45 Dual Display Multimeter

PRE-LAB ASSIGNMENT Answer the following questions: Silicon Diode Characteristics i. The semiconductor diode is basically a pn junction. Draw a simple diagram to show the cross section of the diode. On the diagram, indicate the p and n regions as well as the anode and the cathode of the diode.

ii.

Sketch the I-V characteristic of an ideal diode.

EEEB 141 Electronics Design Lab -Lab 1

BACKGROUND Diode is a device formed from a junction of p-type and n-type semiconductor materials. The lead connected to the p-type material is called anode while the lead connected to the ntype material is called cathode. Normally, the cathode of a diode is marked by a solid line on the diode.

Anode

Cathode

One important application of diode is rectification. When it is forward biased (higher potential connected to the anode), the diode will allow current to pass. When it reversed biased (higher potential connected to the cathode), the current is almost zero or blocked.
I Reverse Bias Breakdown Region Reverse Bias Region

Forward Bias Region V

The diode can be thought of a switch that closes (on) when the diode is forward biased, and opens (off) when diode is reversed biased. Another important characteristic of a diode is the reverse bias breakdown. Applied reverse bias voltage cannot increase without limit. At some point, breakdown occurs and the reverse-bias direction increases rapidly. Breakdown may damage to a normal diode. However, diodes called Zener diodes can be designed and fabricated to provide a specific breakdown point.

EEEB 141 Electronics Design Lab -Lab 1

IN-LAB ACTIVITIES

1. Measure and record the resistance of the resistors. Construct the forward-biased circuit shown in Figure 1-1. Set the power supply for zero volts.

Figure 1-1 2. Monitor the forward voltage drop, VD,FOR, across the diode, D1. Slowly increase VS to establish 0.35V across the diode. Measure the voltage across the resistor, VR1, and compute ID FOR. Record and tabulate the data based on VD,FOR in Table 1-1. 3. Connect the reverse-biased circuit shown in Figure 1-2. Record and tabulate the data in Table 1-2.

Figure 1-2 4. Plot graphs of current, I against the output voltage, Vo for the forward and reverse biased diode circuits graph papers.

EEEB 141 Electronics Design Lab -Lab 1

RESULTS Resistor Resistances R330 : R1M : M VD,FOR (V) VS (V) Nominal 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 Table 1-1 VS (V) VR1 (V) Nominal 5 10 15 20 25 Table 1-2 Measured VD,REV (V)
ID VR1 (A) R1

Diode Resistances Forward bias: M Reverse bias: M

VR1 (A) R1

VR1 (V)

I D FOR

Measured

EEEB 141 Electronics Design Lab -Lab 1

POST LAB DISCUSSIONS Silicon Diode Characteristic 1. Describe your observation/understanding based on the plotted forward biased diode curve graph.

2. Discuss the difference from the experimental I-V plot, compared to the ideal diode I-V characteristic drawn in the pre-lab question.

CONCLUSIONS

EEEB 141 Electronics Design Lab -Lab 1