Introduction to Semiconductor Devices (Purdue University EE 305/606) Supplemental Home or! E"ercises Tutorial questions based http://www.nanohub.org.

on Drift-Diffusion Lab v1.0 available online at

Reference book: Semiconductor Device Fundamentals b Robert !. "ierret #$hapter %& Concept : Drift '(& )et us consider an intrinsic Si slab of length *.(um at room temperature #T+%** ,&. #Select !-periment .( for this question& #a& Dope the semiconductor to /a+ (e(0 /cm% and ramp voltage from * to 12. $omment on the 342 characteristics. #b& /ow dope the semiconductor to /d+ (e(0 /cm% and ramp voltage from * to 12. $omment on the 342 characteristics. #c& 5enerate vd #cm/sec& vs ! #2/cm& curves for holes and electron from #a& and #b&. 6hat is the saturation velocit 7 #d& !-tract electron #8n& and hole #8p& mobilit values from the figure generated above. '1& /ow9 let us consider an Si slab of length *.: um. #Select !-periment .( for this question& #a& ;t room temperature9 dope it /4t pe #/d& in steps from (e(0/cm% to (e(</cm%. $alculate electron mobilit #8n& for each doping level. #b& Similarl dope the semiconductor "4t pe #/a& in steps from (e(0/cm% to (e(</cm%. $alculate hole mobilit #8p& for each doping level. #c& "lot 8n vs /d and 8p vs /a. 6h do mobilit values reduce at high doping levels 7 #d& For each doping level in #a& var temperature #T& from 1** , to :**,. #e& For each doping level in #b& var temperature #T& from 1**, to :**,. #f& "lot 8n vs T and 8p vs T at different doping levels. 6h does mobilit increase with decreasing temperature7 Concept: Diffusion '%& $onsider a Si slab of length 0 um at room temperature. )et light shine on the left edge with a penetration depth of *.( um. The e4h pair generation rate due to light shining be9 5+ (e1% /cm%.s. 3n realit the minorit carrier life times are in the order of few hundreds of micro4seconds. Diffusion length #)p& calculated using L p= D p p 9 where Dp and =p are diffusion coefficient and minorit carrier life time. #a& $alculate the diffusion length for a (. n4 t pe semiconductor slab with =p + (* s. 6hat is the hole diffusion coefficient provided bulk silicon hole mobilit is 0:* cm1 24(s4( at %**,. 1. p4 t pe semiconductor slab with =n + (* s. 6hat is the electron diffusion coefficient provided bulk silicon electron mobilit is (0** cm1 24(s4( at %**,. >ow does this length compare with the actual device lengths 7

#b& To understand the phenomena of diffusion we can choose a ratio for D p / )p where Dp is the diffusion coefficient and )p is the minorit diffusion length. This ratio for device simulation must be kept small which is governed b the minorit carrier life time Lp D p according to this formula : = Lp p ?sing the calculated diffusion coefficients from part #a&9 what value for minorit carrier life time must be set to obtain a diffusion length of around (m 7
/ow set =n +(ns and =p +(ns #for simulation purpose& and do the following simulations.

#c& 3f the semiconductor is doped /4t pe /d+(e(: /cm%. Do low level in@ection conditions prevail inside the illuminated bar. !-plain7 #d& Sketch e-cess minorit carrier concentration and compare with simulated result. $alculate hole diffusion coefficient9 Dp from this result. #e& Suppose the semiconductor was "4t pe /a+(e(: /cm%. Do low level in@ection conditions prevail inside the illuminated bar7 #f& Sketch e-cess minorit carrier concentration and compare with simulated result. $alculate electron diffusion coefficient9 Dn from this result. >ow do the values of diffusion coefficient calculated compare with the values from part #a&. Concept: Quasi-Fermi Level '0& $onsider a Si slab of ( um length at room temperature #T+%** ,&. )ight is shone at the top of it with generation rate at the surface9 5 + 1e1* /cm%.s. #as shown in figure (&

#i$ure %& 'i$(t s(inin$ on a silicon sla)

#a& )et the semiconductor be intrinsic and shine light from *.0 um to *.A um. Sketch the quasi Fermi levels and compare with simulated result. 6h does f p #'uasi Fermi level for holes& show more dip than fn #'uasi Fermi level for electrons&7 #Bou can use other results to support our answer&

#b& /ow shine light on the left half of the slab. #set light start at *.*um and light end at *.:um&. "erform the simulation. Sketch the band diagrams and quasi Fermi levels e-pected and compare. !-plain the ph sical reason and support it using the results from the tool. #c& /ow repeat the same e-periment on the right half of the slab. #set light start at *.:um and light end at (.*um&. Sketch the band diagrams and quasi Fermi levels e-pected and compare. #d& 6hat do ou observe in the transient current characteristics for #b& and #c&7 !-plain the ph sical reason.