ESc201:IntroductiontoElectronics

MetalOxideSemiconductorFieldEffect Transistors(MOSFETs)

Dr. K D K. V V. S Srivastava i t Dept. of Electrical Engineering IIT Kanpur

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Introduction
Classification of MOSFET P channel Enhancement type Depletion p type yp N channel Enhancement type Depletion type

Widely used in IC circuits

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MOSFET
M t l Oxide Metal O id Semiconductor S i d t Field Fi ld Effect Eff t Transistor T it

An NMOSFET

Device Structure of Enhancement-Type NMOS

L: 1 to 10 m W: 2 to 500 m Thickness of oxide layer: 0.02 to 0.1 m

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Device Structure of Enhancement-Type NMOS

Symbols

NMOSFET
(a) ( ) Circuit symbol y for the n-channel enhancement-type yp MOSFET. (b) Modified circuit symbol with an arrowhead on the source terminal to distinguish it from the drain and to indicate device polarity (i.e., n channel). (c) Simplified circuit symbol to be used when the source is connected to the body or when the effect of the body on device operation is unimportant. 6

Symbols

NMOSFET Mostly Used

PMOSFET

Physical Operation

C ti an n channel Creating h l Drain current controlled by y vDS Drain current controlled by vGS

Creating a Channel for Current Flow

The enhancement enhancement-type type NMOS transistor with a positive voltage applied to the gate. An n channel is induced at the top p of the substrate beneath the gate.
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Drain Current Controlled by Small Voltage vDS

An NMOS transistor with vGS > Vt and with a small vDS applied. The Th channel h nn l depth d pth is uniform. nif m The device acts as a resistance. The channel conductance is proportional to effective voltage. voltage Drain current is proportional to (vGS Vt) vDS.
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vDS is increased

Operation of the enhancement NMOS transistor as vDS is increased. The induced channel acquires a tapered shape. hannel res resistance stance increases ncreases as vDS is s increased. ncreased. Channel Drain current is controlled by both of the two voltages.
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Channel Pinch- Off

Channel is p pinched off Inversion layer disappeared at the drain point Drain current is nt disappeared Drain current is saturated and only controlled by the vGS Triode region and saturation region

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Drain Current Controlled by vGS

vGS creates the channel. Increasing vGS will increase the conductance of the channel. At saturation region only the vGS controls the drain current. At subthreshold region, drain current has the exponential relationship with vGS

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Transfer Characteristics
ID(mA) N-MOSFET

For VDS VGS VT

Cut Off

On

VGS(V) Vt: Threshold Voltage

14 14

I-V Characteristics

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Regions of Transistor Operation

Cut off region (vGS < Vt ) Input voltage less than threshold voltage

N-MOSFET N MOSFET iD(mA)

Cut Off

On

VT: Threshold Voltage vGS(V)

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Regions of Transistor Operation

T Triode i d region i (vGS > VT and d vDS < vGS VT) Linear relationship between iDS and vDS reflects resistive behaviour for small vDS

vGS > VT

N-MOSFET N MOSFET iD(mA)

v DS < vGS VT

Cut Off

On

VT: Threshold Voltage vGS(V)

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Regions of Transistor Operation

Saturation region (vGS > VT and vDS vGS VT) Transistor is on vGS > VT Drain bias is above saturation voltage Amplifier should operate in this region v DS > vGS VT N-MOSFET N MOSFET iD(mA)

Cut Off

On

VT: Threshold Voltage

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Saturation region (vGS > VT and vDS > vGS VT)

The current iDS begins to saturate as vDS approaches the value of (vGS VT).

The saturation region of MOSFET Operation

MOSFET M FET operates in saturation region when h following f ll two conditions are met:

vGS > VT

v DS > vGS VT

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Different values of vGS (> Vt ) provides different iDSand vDS Characteristics

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The Switch Current Source MOSFET Model

MOS Device

Open State

Closed State

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The Switch Current Source MOSFET Model

When vGS > VT and vDS > vGS VT the amount of current provided by the source is

K iD = ( vGS VT 2
Unit of K: A/V2

W where K = k = n C ox L
' n

W: gate width; L: gate Length

kn: Constant related to MOSFET properties (A/V2) n: Electron mobility in channel Cox: Capacitance per unit area of parallel plate capacitor by gate electrode and channels

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Example-1: Determine the current iDS for the circuit shown below.
Assume: K= 1mA/V2 and VT = 1V

K iD = ( vGS VT 2

1 2 iD = ( 2 1) 2

iD = 0.5

mA
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Example-2: Assume: K= 1mA/V2 and VT = 1V

+ _ What Wh t should h ld b be th the minimum i i value l of f th the drain d i to t source vDS for which MOSFET will operate in saturation region. (Assume VGS is 2V) ) For the MOSFET to operate in saturation:

vGS > VT v DS > vGS VT

vDS > 1

V
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Example-3: Assume: K= 1mA/V2 and VT = 1V

+ _ What is maximum value of vGS for which MOSFET will operate in saturation region

vGS > VT

For the MOSFET to operate in saturation:

v DS > vGS VT

5 > vGS 1 vGS < 6 V

vGS > 1

1 V < vGS < 6

V
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p Channel Device
Structure of p channel device The substrate is n type and the inversion layer is p type. type Carrier is hole. Threshold voltage is negative. All the voltages and currents are opposite to the ones of n channel device. Physical operation is similar to that of n channel device.

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Complementary MOS or CMOS

The PMOS transistor is formed in n well. Another arrangement is also possible in which an n-type body is used and the n device is formed in a p well. y used of all the analog g and digital g IC circuits. CMOS is the most widely
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Large Signal Equivalent Circuit Model for NMOS

Large Signal Equivalent circuit model of the n-channel MOSFET in saturation, incorporating the output resistance ro. The output resistance models the linear dependence of iD on vDS
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MOSFET Circuit: DC Analysis

a. b. c. d. e. Assuming device operates in saturation thus iD satisfies with iD~vGS equation. According to biasing method, write voltage loop equation. Combining above two equations and solve these equations. Usually we can get two value of vGS, only the one of two has physical meaning. Checking the value of vDS i. if vDSvGS-Vt, assumption is correct. ii. if vDSvGS-Vt, assumption is not correct.

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Example 4 (DC Analysis of MOSFET Circuits)

D i the Design h circuit i i shown h i figure in fi so that h the h MOSFET operates in i saturation region with ID = 0.4 mA and VD = 1 V. The MOSFET has Vt = 2 V, nC0x = 20 A/V2 , L = 10 m and W = 400 m.
5V RD ID = 0.4 0 4 mA VD = 1 V VS RS -5 V

r0

5 1 RD = = 10 K 0.4 mA
1 W I D = 0C0 x (VGS Vt ) 2 2 L

1 6 A 400 2 0.4 mA = 2010 ( V 2 ) GS 2 2 V 10

(VGS 2) = 1
2

VGS 2 = 1
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or

VGS = +1 V or +3 V

VGS = +1 V or +3 V

vGS > VT

The first solution is not consistent with our initial assumption of operation in the saturation mode Vt (=2 V) Therefore
5V RD ID = 0.4 0 4 mA VD = 1 V VS RS -5 V

VGS = 3 V VS = 3 V

VS (5) VS + 5 RS = = IS ID

3+5 = = 5 K 0.4 mA
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Example 5 (DC Analysis of MOSFET Circuits)

Design the circuit shown in figure for MOSFET to operate in saturation with drain voltage of 0.1 V. Determine RD .The MOSFET has Vt = 1 V and kn`W/L = 1 mA/V2 . Neglect r0.
VDD = + 5 V

vGS > VT v DS > vGS VT

ID

RD VD = +0.1 V

VT > vGD
VGS = 5 V

( >VT )

MOSFET is ON

VGD = 5 0.1 = 4.9 V

VT < vGD
MOSFET is not in saturation
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Example 6 (DC Analysis of MOSFET Circuits)

Design the circuit as shown in figure so that the MOSFET operates in saturation region with ID = 0.4 mA. The MOSFET has Vt = 2 V, nC0x = 20 A/V2 , L = 10 m and W = 100 m. Neglect r0 .
10 V

vGS > VT v DS > vGS VT VT > vGS v DS VT > vGD

VGD = 0
VGD < Vt
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R VGD= 0 VD 0 4 mA 0.4

ID = 0.4 mA, Vt = 2 V, nC0x = 20 A/V2

L = 10 m and W = 100 m.

1 W I D = 0C0 x (VGS Vt ) 2 2 L

1 6 100 0.4 mA = 2010 (VGS 2)2 2 10

(VGS 2) 2 = 4 VGS 2 = 2

10 V

VGS = 0 or 4 V

VGD < Vt
R VGD= 0 VD 0 4 mA 0.4

vGS > VT
VD = 4 V
= 10 4 = 15 K 0.4 mA

MOSFET is in saturation VGS = 4 V

10 VD R = 0.4 mA

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The MOSFET as an Amplifier

Basic structure of the common-source amplifier.

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The Small-Signal Models

(a) ( ) neglecting g g the the channel-length g modulation effect (b) including the effect of channel-length modulation, modeled by output resistance ro = |VA| /ID.

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The ac Characteristics
Transconductance g m

iD vGS

vG S = VG S

W = kn ' L

(V G S
V = I

VT

Output Resistance

ro

v DS iD

A D

iD = I

VA is MOSFET parameter used to determine r0

Voltage gain

Av

vo vi
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The Common-Source Amplifier

Very high input resistance Moderately high voltage gain Relatively R l ti l high hi h output t t resistance i t
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Equivalent Circuit of the CS Amplifier

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Characteristics of CS Amplifier

Input resistance Voltage gain

Rin = RG

vo Av = = g m (ro / / RD / / RL ) vgs
vo RG = gm ( RD / / RL / / ro ) Gv = vsig RG + Rsig g g

Overall voltage gain Output resistance

Rout = ro // RD

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Example-9: Small signal analysis of MOSFET Amplifiers

Determine Av (neglecting the effects of RG ), ) Rin , and Rout for the circuit shown in Fig.. given that Vt = 1.5 V, VA = 50 V and
k n W L = 0.25 mA/V 2

Solution: The first step is to determine the DC operating point.

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The DC equivalent circuit:

vGS > VT
15 V

v DS > vGS VT VT > vGS v DS

RD

VT = 1.5 15V

RG

VT > vGD VT > 0

S Second d condition diti is i valid lid

V GD = 0

ID

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1 I D = 0.25 10 3 (VGS 1.5) 2 = 1.25 10 4 (VGS 1.5) 2 2

Since, VGS =VDS

I D = 0.125(VDS 1.5) 2 mA

15 V 1 W 2 I D k n (VGS Vt ) 2 L
VT = 1.5 V

VDS = 15 R D I D = 15 10I D
I D = 0.125(15 0 125(15 10I D 1 1.5) 5)
I D = 1.06 mA VDS = 4.4 V ( = VGS )
2

RG

RD ID

V GD = 0
RD = 10 k RG = 10 M

I D = 1.72 mA VDS = 2.2 V ( = VGS )

For MOSFET to operate in saturation:

vGS > VT
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For small signal analysis: Transconductance

W g m = k (VGS Vt ) n L

g m = 0.25 103 (4.4 1.5) = 0.725 mS

Output Resistance

VA r0 = ID
VA 50 = = 47.2 k r0 = ID 1 1.06 06 mA
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For small signal analysis:

A lifi Circuit Amplifier Ci it

Small signal S g Equivalent q circuit model

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For small-signal voltage gain, RG is extremely large RG >> r0 || RD || RL

v 0 g m v gs (r0 || R D || R L )
vgs = vi

v0 Av = g m (r0 || R D || R L ) = 3.3 vi

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Input resistance

vi R in ii

vi v0 vi v 0 vi ii = = 1 = (1 A v ) RG R G vi R G

vi (1 + 3 .28 ) ii = RG

R in =

vi R G = = 2.34 M i i 4.28

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Output Resistance, To compute this we set vgs = 0 in the small scale equivalent circuit, circuit which will open circuit the dependent current source leading to equivalent circuit as shown below. From F the h fi figure we can compute Rout as

RG

r0

RD

RL

R out

R out = R G || r0 || R D = 8.24 k
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Common-Source Amplifier: Biasing with current source

Biasing with constant-current source. CC1 And CC2 are coupling capacitors. CS is the bypass capacitor.
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The Common-Source Amplifier with a Source Resistance

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Small-signal Equivalent Circuit: Neglecting ro

vin = vgs + g m vgs Rs

vo = g mvgs ( RD RL )
g R R v ( ) m D L o Voltage g gain g Av = = vin 1 + g m Rs

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Overall voltage gain

RG vin = vsig g RG + Rsig

g m ( RD RL ) vo RG Gv = = vsig RG + Rsig 1 + g m Rs

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Characteristics of CS Amplifier with a Source Resistance

Input resistance Rin = RG Voltage gain Overall voltage gain

Gv =

g m ( R D // R L ) Av = 1 + g m RS
RG g m ( RD // RL ) RG + Rsig 1 + g m RS

Output resistance Rout = RD

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Example 9: Common Source Amplifier Compute the small- signal voltage gain for the circuit shown in figure
W / L = 1 mA/V2 , and Vt =1.5 V. below with Rs = 2 k , kn

+ 10 V
' kn

RD = 14 k

W mA =1 2 L V

Rsig = 100 k
+

RS

v0
RL = 14 k

vsig

RG = 4 7 M 4.7

Vt = 1.5 V

0 5 mA 0.5
10 V
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Example 9 (Contd.)

DC Analysis:
+ 10 V
RD = 14 k

VG = 0 and ID = IS = 0.5 mA

VD = 10 RD I D = 10 14k 0.5mA = 3 V
1 'W I D = k n (VGS Vt ) 2 2 L
1 0.5 mA = 1 10 3 (VGS 1.5) 2 2

VT = 1.5 V
RG = 4.7 M

RS
0.5 mA 10 V

VGS 1.5 = 1 VGS = 2.5 V or 0.5 V

MOSFET is in saturation mode

vGS > VT

VGS = 2.5 V

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For small signal analysis:

W g m = k (VGS Vt ) n L
+ 10 V

W gm = k (VGS Vt ) = 10 3 (2.5 1.5) = 1 mS L

' n

g m ( RD RL ) vo RG Gv = = vsig RG + Rsig 1 + g m Rs
' kn

RD = 14 k

W mA =1 2 V L

Rsig = 100 k
+

RS

v0
RL = 14 k

vsig

RG = 4.7 M

Vt = 1.5 V

0.5 mA 10 V

4.7M 103 (14k ||14k) Gv = 3 3 4.7M + 100 k 1 + 10 2 10 57 = 2.33

Example: DC Analysis
For the circuit shown in Fig. below calculate the voltage V0 and current I0. Both the MOSFET Q1 and Q2 are identical with Vt = 1 V, nCox = 2.5 A/V2, L = 10 m, and W = 30 m.
VGD= 0 V f for b both th th the MOSFET MOSFET. VGD < Vt (MOSFET is in Saturation)

I 0 = I D1 = I D 2

VGS 1 = VGS 2

VGS 1 + VGS 2 = 3 V VGS 1 = VGS 2 = 1.5 V

V0 = 1.5 V
1 I D = 0C0 x 2 L
1 6 30 2 = 2.5 10 (1.5 1) = 0.9375 A W 2 10 (VGS Vt ) 2
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Bipolar Junction Transistor (BJT)

E
E

P B C B E

N B C

E: Emitter B: Base C: Collector

B E

E: Emitter B: Base C: Collector

NPN

PNP
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Not part of theory course but part of lab. experiment

Dc current-voltage Characteristics of NPN Transistor

IC = F I B
I0

Vi
V=1V

I0
Vi=1.03V Vi=1.02V

10mA 0.2V 2V

Vi=1.01V

V0

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IC = F IB
IB4 40A

7.6 mA
Forward Active Mode

IB3 30A IB2 20A IB1 10A

5.6 mA 3.7 mA 1.7 mA ~0.2V

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I Csat = forced < F IB

Saturation

IC = F IB

IB4 40A IB3 30A IB2 20A IB1 10A

I Csat

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