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Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances VDS @ Tjmax RDS(on) ID 650 0.07 47
P-TO247
V A
Type SPW47N60C3
Package P-TO247
Marking 47N60C3
Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg 20 20 30 415 -55... +150 W C A V 1 I D puls EAS Symbol ID 47 30 141 1800 mJ Value Unit A
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SPW47N60C3
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 47 A, Tj = 125 C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=2700, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C
Unit K/W C
Values typ. 700 3 0.5 0.06 0.16 0.62 max. 3.9 600 2.1 -
Unit V
I GSS
RG
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SPW47N60C3
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
V DD=350V, ID=47A, V GS=0 to 10V V DD=350V, ID=47A
Conditions min.
V DS2*I D*RDS(on)max, ID=30A V GS=0V, V DS=25V, f=1MHz
Values typ. 40 6800 2200 145 193 412 18 27 111 8 max. 165 12 -
Unit S pF
pF
td(on) tr td(off) tf
ns
320 -
nC
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
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SPW47N60C3
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.002689 0.005407 0.011 0.054 0.071 0.036 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.001081 0.004021 0.005415 0.014 0.025 0.158 Ws/K Unit Symbol Value typ. Unit VSD t rr Q rr I rrm di rr/dt
VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/s
Symbol IS I SM
Conditions min.
TC=25C
Unit A
V ns C A A/s
Tj P tot (t)
R th1
R th,n
T case
E xternal H eatsink
C th1
C th2
C th,n T am b
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SPW47N60C3
1 Power dissipation Ptot = f (TC)
500
SPW47N60C3
W
400 350
A
10 2
Ptot
ID
10 1
10 0
10 -1
20
40
60
80
100
120
160
10 -2 0 10
10
10
TC
10 V VDS
K/W A
10 0 200 10 -1
7.5V
ZthJC
ID
7V
160
6.5V
10 -2
10
-3
120
6V
80
5.5V
40
5V 4.5V
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s tp
10
0 0
12
16
20
26 V VDS
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SPW47N60C3
5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS
160
20V
A
6.5V
4V
4.5V
5V
RDS(on)
120
0.4
5.5V
ID
100
6V
0.35
80
5.5V
0.3
6V
60
5V
0.25
6.5V 20V
40
4.5V
0.2
20
4V
0.15
0 0
12
16
20
26 V VDS
0.1 0
20
40
60
80
100
120
A 160 ID
A
0.32
25C
RDS(on)
0.28
200
ID
160 120
150C
80
40
-20
20
60
100
180
0 0
Tj
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V 10 VGS
2003-11-06
SPW47N60C3
9 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed
16
V
SPW47N60C3
12
VGS
10 2
IF
10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0
10
0 0
40
400
0.4
0.8
1.2
1.6
2.4 V
QGate
VSD
11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=47A
6000
12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=47 A
10 3
td(off)
A/s
ns
di/dt
4000
10 2
tf td(on)
3000
di/dt(on) tr
t
2000 10 1 1000
di/dt(off)
0 0
10
12
14
16
RG
20
10 0 0
10
12
14
16
20 RG
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SPW47N60C3
13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V, RG =1.8
10
3
14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=47A
80
td(off)
ns
V/ns
dv/dt(off)
10 2
td(on)
60
dv/dt
50
10 1
tf
40
tr
30
10 0
20
dv/dt(on)
10 10 -1 0
10
20
30
A ID
50
0 0
10
12
14
16
20 RG
15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =1.8
0.4
*) Eon includes SDP06S60 diode commutation losses.
16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=47A
1.4
*) Eon includes SDP06S60 diode commutation losses.
mWs mWs
1
Eoff
E
0.8
Eoff
0.2 0.6
Eon* Eon*
0.1
0.4
0.2
0 0
10
20
30
A ID
50
0 0
10
12
14
16
20 RG
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SPW47N60C3
17 Avalanche SOA IAR = f (tAR) par.: Tj 150 C
20
A
16 14
mJ
1400
EAS
-2 -1 0 1 2
IAR
1200 1000
12 10
800 8 6 4 2 0 -3 10
4
10
10
10
10
10
s 10 tAR
50
75
100
C Tj
150
V(BR)DSS
680 660 640 620 200 600 580 560 540 -60 0 4 10
5 6
PAV
C
300
100
-20
20
60
100
180
10
Hz f
10
Tj
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SPW47N60C3
21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10 5 30
pF
Ciss
10 4
Eoss
10 3
Coss
20
15
10 10 2
Crss
10 1 0
100
200
300
400
600
0 0
100
200
300
400
600
VDS
VDS
V VGS(th)
max.
3.25
typ.
2.75
min.
2.25
1.75
25
50
75 100 125
C Tj
175
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SPW47N60C3
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SPW47N60C3
P-TO-247-3-1
15.9 6.35 3.61 5.03 2.03
4.37
20.9
9.91
6.17
1.75
16
General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12
41.22
2.97 x 0.127
5.94
20
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SPW47N60C3
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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