AO4606

30V Complementary MOSFET

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
N-Channel VDS= 30V ID= 6A (VGS=10V) RDS(ON) < 30m (VGS=10V) < 42m (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -6.5A (VGS=-10V) RDS(ON) < 28m (VGS=-10V) < 44m (VGS=-4.5V) 100% UIS Tested 100% Rg Tested

SOIC-8 D2 Top View Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1

G2 S2

G1 S1

Pin1

n-channel

p-channel Units V V A A mJ W C

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
C

Max p-channel -30 20 -6.5 -5.3 -30 23 26 2 1.3

VGS C TA=25 TA=70 C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

20 6 5 30 10 5 2 1.3 -55 to 150

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 48 74 32

Max 62.5 90 40

Units C/W C/W C/W

Rev 10: April 2012

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AO4606

N-Channel Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V C TJ=55 VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance Diode Forward Voltage VDS=5V, ID=6A IS=1A,VGS=0V C TJ=125 1.2 30 25 40 33.5 15 0.76 1 2.5 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 30 20 1.6 4 VGS=10V, VDS=15V, ID=6A 2 255 45 35 3.25 5.2 2.55 0.85 1.3 4.5 VGS=10V, VDS=15V, RL=2.5, RGEN=3 IF=6A, dI/dt=100A/s 2.5 14.5 3.5 8.5 2.2 12 3 310 60 50 4.9 6 3 30 48 42 1.8 Min 30 1 5 100 2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 10: April 2012

www.aosmd.com

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AO4606

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 4V ID (A) 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 45 Normalized On-Resistance 40 VGS=4.5V RDS(ON) (m ) 35 30 25 VGS=10V 20 0 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 3 6 0.8 0 75 100 125 150 175 Temperature ( C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 50 2 1.8 1.6 1.4 1.2 1 VGS=4.5V ID=6A VGS=3V 3 ID(A) 9 7V 4.5V 12 15 VDS=5V

6 125C 25C

0 1 1.5 2 2.5 3 3.5 4

VGS(Volts) Figure 2: Transfer Characteristics (Note E)

VGS=10V ID=8A

17 5 2 10

100 ID=6A

1.0E+02 1.0E+01

80 RDS(ON) (m )

1.0E+00 IS (A) 1.0E-01 1.0E-02 25C 25C 1.0E-03 1.0E-04 125C

40

60

125C

40

20 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0 2

1.0E-05 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.0 0.2

Rev 10: April 2012

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AO4606

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=6A 8 Capacitance (pF) 400 500

VGS (Volts)

300

Ciss

200 Coss 100 Crss

0 0 4 Qg (nC) Figure 7: Gate-Charge Characteristics 2 6

0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30

100.0

1000
TA=25C

10.0

10s 100s 1ms 10ms Power (W) RDS(ON) limited

100

ID (Amps)

1.0

10

0.1

TJ(Max)=150C TA=25C

DC

10s

0.0 0.01 0.1 1 VDS (Volts) 10 100

1 0.00001 0.001 0.1 10 1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=90C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01

PD Ton

T 100 1000

0.001 0.00001 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 0.001

Rev 10: April 2012

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AO4606

Gate Charge Test Circuit & Waveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) t on tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

Rev 10: April 2012

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AO4606

P-Channel Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions Min -30 -1 Typ Max Units V -5 100 -1.3 -30 22 28 40 44 -1 -2.5 760 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.5 140 95 3.2 13.6 VGS=10V, VDS=-15V, ID=-6.5A 6.7 2.5 3.2 8 VGS=10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.5A, dI/dt=100A/s 6 17 5 15 9.7 5 16 8 -1.85 -2.4 A nA V A 32 34 18 -0.8 m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage

ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C

VDS=0V, VGS=20V

VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.5A TJ=125C VGS=-4.5V, ID=-5A VDS=-5V, ID=-6.5A IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 10: April 2012

www.aosmd.com

Page 6 of 9

AO4606

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 -10V -5V -4.5V 30 -4V -ID (A) -ID(A) 20 -3.5V 10 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 45 Normalized On-Resistance 40 35 RDS(ON) (m ) 30 25 20 VGS=-10V 15 10 0 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 VGS=-4.5V 1.8 1.6 1.4 1.2 1 0.8 0 75 100 125 150 175 Temperature ( C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 50 VGS=-10V ID=-6.5A 0 0 1 2 3 4 5 10 20 125C 25C 40 VDS=-5V

30

-VGS(Volts) Figure 2: Transfer Characteristics (Note E)

17 5 2 VGS=-4.5V 10 ID=-5A

90 ID=-6.5A

1.0E+02 1.0E+01

70 RDS(ON) (m )

1.0E+00 125C 125C -IS (A) 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04

40

50

30

25C

10 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 4

1.0E-05 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.0 0.2

Rev 10: April 2012

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AO4606

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=-15V ID=-6.5A 8 1200 1000 Capacitance (pF) Ciss 800 600 400 Coss 200 0 0 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 3 15 0 Crss 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30

-VGS (Volts)

100.0

1000
TA=25C

10.0

10s

-ID (Amps)

1.0

1ms

10ms
0.1

Power (W)

RDS(ON) limited

100s

100

10

TJ(Max)=150C TA=25C

DC

10s

0.0 0.01 0.1 1 -VDS (Volts) 10 100

1 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) 0.001

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.01

Rev 10: April 2012

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AO4606

Gate Charge Test Circuit & Waveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

Resistive Switching Test Circuit & Waveforms

RL Vds Vgs Vgs Rg DUT
VDC

Vgs Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Vds Isd Vgs Ig

VDC

+ Vdd -Vds

Rev 10: April 2012

www.aosmd.com

+
Charge
ton td(on) tr t d(off) toff tf

Vds

Qgs

Qgd

Vdd

90%

10%

E AR= 1/2 LIAR

Vds BVDSS Vdd Id I AR

Q rr = - Idt

-Isd

-I F

dI/dt -I RM Vdd

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