Professional Documents
Culture Documents
n n n n n n
85 ns Access Time (t RAC) Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology User-Selectable 3.3V or 5V V CC User-Selectable 5V or 12V V PP 0.33 MB/sec Write Transfer Rate x16 Architecture
Intels 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems. The 28F016XDs DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems. The 28F016XDs dual read voltage allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface. Its high read performance combined with flexible block locking enable both storage and execution of operating systems/application software and fast access to large data tables. The 28F016XD is manufactured on Intels 0.6 m ETOX IV process technology.
December 1996
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intels Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. The 28F016XD may contain design defects or errors known as errata. Current characterized errata are available upon request. *Third-party brands and names are the property of their respective owners. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683
COPYRIGHT INTEL CORPORATION, 1996 CG-041493
E
4.0 4.1 4.2 4.3 4.4 4.5 4.6
CONTENTS
PAGE PAGE AC Characteristics (VCC = 3.3V 0.3V)..............................28 Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) ....28 Read Cycle...............................................28 Write Cycle ...............................................29 Read-Modify-Write Cycle..........................30 Fast Page Mode Cycle .............................30 Fast Page Mode Read-Modify-Write Cycle ........................................................30 Refresh Cycle...........................................31 Misc. Specifications ..................................31 5.7 AC Characteristics (VCC = 5.0V 0.5V)..............................33 Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) ....33 Read Cycle...............................................34 Write Cycle ...............................................35 Read-Modify-Write Cycle..........................35 Fast Page Mode Cycle .............................35 Fast Page Mode Read-Modify-Write Cycle ........................................................36 Refresh Cycle...........................................36 Misc. Specifications ..................................37 5.8 AC Waveforms ........................................38 5.9 Power-Up and Reset Timings..................50 5.10 Erase and Word Program Performance ..51 5.6 6.0 MECHANICAL SPECIFICATIONS ............52
1.0 INTRODUCTION ......................................... 5 1.1 Product Overview...................................... 5 2.0 DEVICE PINOUT......................................... 6 2.1 Lead Descriptions ..................................... 9 3.0 MEMORY MAPS ....................................... 11 3.1 Extended Status Registers Memory Map ........................................ 12 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS.......... 13 Bus Operations ....................................... 13 28F008SACompatible Mode Command Bus Definitions.................... 14 28F016XDEnhanced Command Bus Definitions ..................................... 15 Compatible Status Register .................... 16 Global Status Register ............................ 17 Block Status Register.............................. 18
5.0 ELECTRICAL SPECIFICATIONS ............. 19 5.1 Absolute Maximum Ratings..................... 19 5.2 Capacitance............................................ 20 5.3 Transient Input/Output Reference Waveforms........................................... 21 5.4 DC Characteristics (VCC = 3.3V 0.3V).............................. 22 5.5 DC Characteristics (VCC = 5.0V 0.5V).............................. 25
APPENDIX A: Device Nomenclature and Ordering Information .....................................53 APPENDIX B: Additional Information...............54
E
REVISION HISTORY
Description
Removed support of the following features: All page buffer operations (read, write, programming, Upload Device Information) Command queuing Software Sleep and Abort Erase All Unlocked Blocks Device Configuration command Changed definition of NC. Removed No internal connection to die from description. Added xx to Upper Byte of Command (Data) Definition in Sections 4.2 and 4.3. Modified parameters V and I of Section 5.1 to apply to NC pins. Increased IPPS (VPP Read Current) for VPP > VCC to 200 A at VCC = 3.3V/5.0V. Changed VCC = 5.0V DC Characteristics (Section 5.5) marked with Note 1 to indicate that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns. Corrected RP# high to RAS# going low to be a Min specification at V CC = 3.3V/5.0V. Increased Typical Word/Block Program Times (tWHRH1/tWHRH3) for VPP = 5.0V: tWHRH1 from 24.0 s to 35.0 s and t WHRH3 from 0.8 sec to 1.2 sec at V CC = 3.3V tWHRH1 from 16.0 s to 25.0 s and t WHRH3 from 0.6 sec to 0.85 sec at V CC = 5.0V Changed Time from Erase Suspend Command to WSM Ready spec name to Erase Suspend Latency Time to Read; modified typical values and added Min/Max values at VCC =3.3/5.0V and VPP =5.0/12.0V (Section 5.10). Minor cosmetic changes throughout document. Added 3/5# pin to Pinout Configuration (Figure 2), Product Overview (Section 1.1) and Lead Descriptions (Section 2.1) Modified Block Diagram (Figure 1): Removed Address/Data Queues, Page Buffers, and Address Counter; Added 3/5# pin Added 3/5# pin to Test Conditions of ICC2 and ICC5 Specifications Modified Power-Up and Reset Timings (Section 5.9) to include 3/5# pin: Removed t5VPH and t 3VPH specifications; Added t PLYL, tPLYH, tYLPH, and tYHPH specifications Corrected TSOP Mechanical Specification A1 from 0.50 mm to 0.050 mm (Section 6.0) Minor cosmetic changes throughout document. Updated DC Specifications ICC3, ICC4, ICC6, ICC7, ICCD and IPPES Updated AC Specifications tCAS(min), tRCD(max) and tCWD(min)
-003
-004
1.0 INTRODUCTION
The documentation of the Intel 28F016XD flash memory device includes this datasheet, a detailed users manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications. The 16-Mbit Flash Product Family Users Manual provides complete descriptions of the user modes, system interface examples and detailed descriptions of all principles of operation. It also contains the full list of software algorithm flowcharts, and a brief section on compatibility with the Intel 28F008SA. Significant 28F016XD feature revisions occurred between datasheet revisions 290533-001 and 290533-002. These revisions center around removal of the following features: All page buffer operations (read, write, programming, Upload Device Information) Command queuing Software Sleep and Abort Erase all Unlocked Blocks Device Configuration command In addition, a significant 28F016XD change occurred between datasheet revisions 290532-002 and 290532-003. This change centers around the addition of a 3/5# pin to the devices pinout configuration. Figure 2 shows the 3/5# pin assignment for the TSOP Type 1 package. Intel recommends that all customers obtain the latest revisions of 28F016XD documentation.
The 28F016XD incorporates an open drain RY/BY# output pin. This feature allows the user to OR-tie many RY/BY# pins together in a multiple memory configuration such as a Resident Flash Array. The 28F016XD is specified for a maximum fast page mode cycle time of 65 ns (tPC,R) at 5.0V operation (4.75V to 5.25V) over the commercial temperature range (0C to +70C). A corresponding maximum fast page mode cycle time of 75 ns at 3.3V (3.0V to 3.6V and 0C to +70C) is achieved for reduced power consumption applications. The 28F016XD incorporates an Automatic Power Saving (APS) feature, which substantially reduces the active current when the device is in static mode of operation (addresses not switching). In APS mode, the typical ICC current is 1 mA at 5.0V (3.0 mA at 3.3V). A deep power-down mode of operation is invoked when the RP# (called PWD# on the 28F008SA) pin transitions low. This mode brings the device power consumption to less than 2.0 A, typically, and provides additional write protection by acting as a device reset pin during power transitions. A reset time of 300 ns (5.0V VCC operation) is required from RP# switching high until dropping RAS#. In the deep power-down state, the WSM is reset (any current operation will abort) and the CSR, GSR and BSR registers are cleared. A CMOS standby mode of operation is enabled when RAS# and CAS# transition high and RP# stays high with all input control pins at CMOS levels. In this mode, the device typically draws an ICC standby current of 70 A at 5.0V V CC. The 28F016XD is available in a 56-Lead, 1.2 mm thick, 14 mm x 20 mm TSOP Type I package. This form factor and pinout allow for very high board layout densities.
E
DQ 8-15 DQ 0-7 Output Buffer Output Buffer Input Buffer
Input Buffer
I/O Logic
VCC
Output Multiplexer
ID Register
Data Register
CSR
RAS#
ESRs
OE#
CAS#
CUI
Data Comparator
WE#
WP#
0-9
RAS# CAS#
RP# Y Decoder
Y Gating/Sensing
RY/BY#
64-Kbyte Block 0
64-Kbyte Block 1
64-Kbyte Block 30
64-Kbyte Block 31
WSM
Address Register
X Decoder
VPP 3/5#
V CC
GND
0533_01
Figure 1. 28F016XD Block Diagram Architectural Evolution Includes Multiplexed Address Bus, SmartVoltage Technology, and Extended Registers
E
E28F016XD 56-LEAD TSOP PINOUT 14 mm x 20 mm TOP VIEW 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP# WE# OE# RY/BY# DQ 15 DQ 7 DQ 14 DQ 6 GND DQ 13 DQ 5 DQ 12 DQ 4 VCC GND DQ 11 DQ 3 DQ 10 DQ 2 VCC DQ 9 DQ 1 DQ 8 DQ 0 NC VCC NC NC
0533_02
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
E
Symbol A0A9 DQ0DQ15 RAS# CAS#
RP#
OE#
WE#
RY/BY#
WP#
VPP
SUPPLY
VCC
SUPPLY
GND NC
SUPPLY
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V operation. 3/5# low configures internal circuits for 5.0V operation. NOTE: Reading the array with 3/5# high in a 5.0V system could damage the device. Reference the power-up and reset timings (Section 5.9) for 3/5# switching delay to valid data. PROGRAM/ERASE POWER SUPPLY (12.0V 0.6V, 5.0V 0.5V): For erasing memory array blocks or writing words into the flash array. V PP = 5.0V 0.5V eliminates the need for a 12.0V converter, while connection to 12.0V 0.6V maximizes program/erase performance. NOTE: Successful completion of program and erase attempts is inhibited with VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious results and should not be attempted. DEVICE POWER SUPPLY (3.3V 0.3V, 5.0V 0.5V): To switch 3.3V to 5.0V (or vice versa), first ramp V CC down to GND, and then power to the new VCC voltage. Do not leave any power pins floating. GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating. NO CONNECT: Lead may be driven or left floating.
10
32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
0533_03
NOTE: The upper 10 bits (A1910) reflect 28F016XD addresses A90, latched by RAS#. The lower 10 bits (A90) reflect 28F016XD addresses A90, latched by CAS#.
11
E
FFFFFH F8003H F8002H F8001H
RESERVED
07FFFH RESERVED
00002H
00001H
00000H
0533_04
12
E
Read Standby Device ID Write
4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations
Mode Row Address Latch Column Address Latch Notes 1,2,9 1,2,9 1,2,7 1,6,7 1,6,7 1,3 4,8 4,8 1,5,6 RP# VIH VIH VIH VIH VIH VIL VIH VIH VIH RAS# VIL VIL VIL VIH X VIL VIL VIL CAS# VIH VIL VIL VIH X VIL VIL VIL OE# X X VIL VIH X X VIL VIL X WE# X X VIH VIH X X VIH VIH VIL DQ015 X X DOUT High Z High Z High Z 0089H 66A8H DIN RY/BY# X X X X X VOH VOH VOH X
Output Disable
NOTES: 1. X can be VIH or VIL for address or control pins except for RY/BY#, which is either VOL or VOH, or High Z or DOUT for data pins depending on whether or not OE# is active. 2. RY/BY# output is open drain. When the WSM is ready, erase is suspended or the device is in deep power-down mode, RY/BY# will be at VOH if it is tied to VCC through a resistor. RY/BY# at VOH is independent of OE# while a WSM operation is in progress. 3. RP# at GND 0.2V ensures the lowest deep power-down current. 4. A0 (latched by CAS#) at VIL provides the Manufacturer ID code. A0 (latched by CAS#) at VIH provides the Device ID code. All other addresses (row and column) should be set to zero. 5. Commands for erase, data program, or lock-block operations can only be completed successfully when V PP = VPPH1 or VPP = VPPH2. 6. While the WSM is running, RY/BY# stays at VOL until all operations are complete. RY/BY# goes to VOH when the WSM is not busy or in erase suspend mode. 7. RY/BY# may be at VOL while the WSM is busy performing various operations (for example, a Status Register read during a program operation). 8. The 28F016XD shares an identical device identifier with the 28F016XS. 9. Row (upper) addresses are latched via inputs A0-9 on the falling edge of RAS#. Column (lower) addresses are latched via inputs A0-9 on the falling edge of CAS#. Row addresses must be latched before column addresses are latched.
13
E
Second Bus Cycle Oper Addr AA IA X Data(4) AD ID CSRD Write Write Write Write PA PA BA X PD PD xxD0H xxD0H
Notes
Oper Write
Addr X X X X X X X X
1 2 3
DATA AD = Array Data CSRD = CSR Data ID = Identifier Data PD = Program Data
NOTES: 1. Following the Intelligent Identifier command, two read operations access the manufacturer and device signature codes. 2. The CSR is automatically available after device enters data program, erase, or suspend operations. 3. Clears CSR.3, CSR.4 and CSR.5. Also clears GSR.5 and all BSR.5, BSR.4 and BSR.2 bits. See Status Register definitions. 4. The upper byte of the data bus (D815) during command writes is a Dont Care.
14
ADDRESS DATA BA = Block Address AD = Array Data RA = Extended Register Address BSRD = BSR Data PA = Program Address GSRD = GSR Data X = Dont Care NOTES: 1. RA can be the GSR address or any BSR address. See Figure 4 for the Extended Status Register memory map. 2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the actual lock-bit status. 3. The upper byte of the data bus (D815) during command writes is a Dont Care.
15
E
R 0 RY/BY# output or WSMS bit must be checked to determine completion of an operation (erase, erase suspend, or data program) before the appropriate Status bit (ESS, ES or DWS) is checked for success. If DWS and ES are set to 1 during an erase attempt, an improper command sequence was entered. Clear the CSR and attempt the operation again.
CSR.6 = ERASE-SUSPEND STATUS 1 = Erase Suspended 0 = Erase In Progress/Completed CSR.5 = ERASE STATUS 1 = Error In Block Erasure 0 = Successful Block Erase CSR.4 = DATA-WRITE STATUS 1 = Error in Data Program 0 = Data Program Successful CSR.3 = VPP STATUS 1 = VPP Error Detect, Operation Abort 0 = VPP OK The VPPS bit, unlike an A/D converter, does not provide continuous indication of VPP level. The WSM interrogates VPPs level only after the Data Program or Erase command sequences have been entered, and informs the system if V PP has not been switched on. VPPS is not guaranteed to report accurate feedback between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) and above VPPH2(max).
CSR.20 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the CSR.
16
E
WSMS 7
NOTES: RY/BY# output or WSMS bit must be checked to determine completion of an operation (block lock, suspend, Upload Status Bits, erase or data program) before the appropriate Status bit (OSS or DOS) is checked for success.
GSR.6 = OPERATION SUSPEND STATUS 1 = Operation Suspended 0 = Operation in Progress/Completed GSR.5 = DEVICE OPERATION STATUS 1 = Operation Unsuccessful 0 = Operation Successful or Currently Running GSR.40 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the GSR.
17
E
R 0 NOTES: RY/BY# output or BS bit must be checked to determine completion of an operation (block lock, suspend, erase or data program) before the appropriate Status bits (BOS, BLS) is checked for success.
BSR.6 = BLOCK LOCK STATUS 1 = Block Unlocked for Program/Erase 0 = Block Locked for Program/Erase BSR.5 = BLOCK OPERATION STATUS 1 = Operation Unsuccessful 0 = Operation Successful or Currently Running BSR.2 = VPP STATUS 1 = VPP Error Detect, Operation Abort 0 = VPP OK BSR.1 = VPP LEVEL 1 = VPP Detected at 5.0V 10% 0 = VPP Detected at 12.0V 5% BSR.1 is not guaranteed to report accurate feedback between the VPPH1 and VPPH2 voltage ranges. Programs and erases with VPP between VPPLK(max) and VPPH1 (min), between VPPH1(max) and VPPH2(min), and above VPPH2(max) produce spurious results and should not be attempted. BSR.1 was a RESERVED bit on the 28F016SA.
BSR.4,3,0 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the BSRs.
18
E
5.0 ELECTRICAL SPECIFICATIONS 5.1 Absolute Maximum Ratings*
Temperature Under Bias ....................0C to +80C Storage Temperature ...................65C to +125C VCC = 3.3V 0.3V Systems Sym TA VCC VPP V Parameter Operating Temperature, Commercial VCC with Respect to GND VPP Supply Voltage with Respect to GND Voltage on any Pin (except VCC,VPP) with Respect to GND Current into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 Min 0 0.2 0.2 0.5 Max 70 7.0 14.0 VCC + 0.5 30 100
NOTICE: This is a production datasheet. The specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design. *WARNING: Stressing the device beyond the Absolute Maximum Ratings may cause permanent damage. These are stress ratings only. Operation beyond the Operating Conditions is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.
Units C V V V
I IOUT
5 4
mA mA
VCC = 5.0V 0.5V Systems Sym TA VCC VPP V I IOUT Parameter Operating Temperature, Commercial VCC with Respect to GND VPP Supply Voltage with Respect to GND Voltage on any Pin (except VCC,VPP) with Respect to GND Current into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 5 4 Min 0 0.2 0.2 2.0 Max 70 7.0 14.0 7.0 30 100 Units C V V V mA mA Test Conditions Ambient Temperature
NOTES: 1. Operating temperature is for commercial product defined by this specification. 2. Minimum DC voltage is 0.5V on input/output pins. During transitions, this level may undershoot to 2.0V for periods <20 ns. Maximum DC voltage on input/output pins is VCC + 0.5V which, during transitions, may overshoot to VCC + 2.0V for periods <20 ns. 3. Maximum DC voltage on VPP may overshoot to +14.0V for periods <20 ns. 4. Output shorted for no more than one second. No more than one output shorted at a time. 5. This specification also applies to pins marked NC.
19
5.2 Capacitance
For a 3.3V 0.3V System: Sym CIN COUT CLOAD Parameter Capacitance Looking into an Address/Control Pin Capacitance Looking into an Output Pin Load Capacitance Driven by Outputs for Timing Specifications Notes 1 1 1,2 Typ 6 8 Max 8 12 50 Units pF pF pF
E
Test Conditions TA = +25C, f = 1.0 MHz TA = +25C, f = 1.0 MHz Notes 1 1 1,2 Typ 6 8 Max 8 12 100 Units pF pF pF Test Conditions TA = +25C, f = 1.0 MHz TA = +25C, f = 1.0 MHz
For 5.0V 0.5V System: Sym CIN COUT CLOAD Parameter Capacitance Looking into an Address/Control Pin Capacitance Looking into an Output Pin Load Capacitance Driven by Outputs for Timing Specifications
NOTE: 1. Sampled, not 100% tested. 2. To obtain iBIS models for the 28F016XD, please contact your local Intel/Distribution Sales Office.
20
E
2.4 0.45
3.0
AC test inputs are driven at VOH (2.4 VTTL) for a Logic 1 and VOL (0.45 VTTL) for a Logic 0. Input timing begins at VIH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
INPUT 0.0
1.5
TEST POINTS
1.5
OUTPUT
0533_06
AC test inputs are driven at 3.0V for a Logic 1 and 0.0V for a Logic 0. Input timing begins, and output timing ends, at 1.5V. Input rise and fall times (10% to 90%) <10 ns.
21
5.4 DC Characteristics
VCC = 3.3V 0.3V, T A = 0C to +70C 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes ICC1 VCC Word Read Current 1,4,5
E
Min Typ 50 Max 70 Unit mA Test Condition VCC = VCC Max RAS#, CAS# = VIL RAS#, CAS#, Addr. Cycling @ tRC = min IOUT = 0 mA Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS#, RP# = V IH WP#, 3/5# = VIL or VIH VCC = VCC Max CAS# = VIH RAS# = VIL RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL CAS#, Addr. Cycling @ tPC = min IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max RAS# CAS# RP# = VCC 0.2V WP#, 3/5# = VCC 0.2V or GND 0.2V VCC = VCC Max CAS#, RAS# = VIL CAS#, RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max VIN = VCC or GND VCC = VCC Max VOUT = VCC or GND RP# = GND 0.2V 1,5 1 4 mA 1,5 50 80 mA
ICC2
ICC3
ICC4
1,4,5
40
70
mA
ICC5
1,5
70
130
ICC6
1,5
40
15
mA
ICC7
1,5
40
10
mA
Input Load Current Output Leakage Current VCC Deep PowerDown Current
1 1 1 2
1 10 10
A A A
22
5.4 DC Characteristics (Continued) VCC = 3.3V 0.3V, T A = 0C to +70C 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes Min
ICCW VCC Word Program Current 1,6
E
ICCE ICCES IPPS IPPD IPPW
Typ 8 8
Unit mA mA mA mA mA A A A mA mA mA mA A V V V V V
Test Condition VPP = 12.0V 5% Program in Progress VPP = 5.0V 10% Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress RAS#, CAS# = VIH Block Erase Suspended VPP VCC VPP > VCC RP# = GND 0.2V VPP = 12.0V 5% Program in Progress VPP = 5.0V 10% Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress Block Erase Suspended
1,6
6 9
VCC Erase Suspend Current VPP Standby/Read Current VPP Deep PowerDown Current VPP Word Program Current
1,2 1 1 1,6
1 1 30 0.2 10 15
IPPE
1,6
4 14
VPP Erase Suspend Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
30
VCC = VCC Min IOL = 4.0 mA VCC = VCC Min IOH = 2.0 mA VCC = VCC Min IOH = 100 A
VPP Erase/Program Lock Voltage VPPH1 VPP during Program/ Erase Operations VPPH2 VPP during Program/ Erase Operations VLKO VCC Erase/Program Lock Voltage
V V V V
23
NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, VPP = 12.0V or 5.0V, T = +25C. 2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICCES and ICC1/ICC4. 3. Block erases, word programs and lock block operations are inhibited when VPP = VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) , and above VPPH2(max). 4. Automatic Power Saving (APS) reduces ICC1 and ICC4 to 3.0 mA typical in static operation. 5. CMOS inputs are either VCC 0.2V or GND 0.2V. TTL inputs are either VIL or VIH. 6. Sampled, but not 100% tested. Guaranteed by design.
24
E
ICC1 ICC2 ICC3
5.5 DC Characteristics
VCC = 5.0V 0.5V, T A = 0C to +70C 3/5# = Pin Set Low for 5.0V Operations Sym Parameter Notes VCC Word Read Current 1,4,5 Min Typ 90 Max 120 Unit mA Test Condition VCC = VCC Max RAS#, CAS# = VIL RAS#, CAS#, Addr. Cycling @ tRC = min IOUT = 0 mA Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS#, RP# = V IH WP#, 3/5# = VIL or VIH VCC = VCC Max CAS# = VIH RAS# = VIL RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL CAS#, Addr. Cycling @ tPC = min IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max RAS#,CAS#,RP# = VCC 0.2V WP#, 3/5# = VCC 0.2V or GND 0.2V VCC = VCC Max CAS#, RAS# = VIL CAS#, RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max VIN = VCC or GND VCC = VCC Max VOUT = VCC or GND RP# = GND 0.2V
1,5
mA
1,5
90
145
mA
ICC4
1,4,5
80
130
mA
ICC5
1,5
70
130
ICC6
1,5
50
15
mA
ICC7
1,5
50
10
mA
Input Load Current Output Leakage Current VCC Deep Power-Down Current
1 1 1 2
1 10 10
A A A
25
5.5 DC Characteristics (Continued) VCC = 5.0V 0.5V, T A = 0C to +70C 3/5# = Pin Set Low for 5.0V Operations
Sym ICCW Parameter VCC Word Program Current Notes 1,6 Min Typ 25 25 ICCE VCC Block Erase Current 1,6 18 20 ICCES IPPS IPPD IPPW VCC Erase Suspend Current VPP Standby/Read Current VPP Deep Power-Down Current VPP Word Program Current 1 1,6 1,2 1 2 1 30 0.2 7 17 IPPE VPP Block Erase Current 1,6 5 16 IPPES VIL VIH VOL VOH1 VOH2 VPPLK VPP Erase/Program Lock Voltage VPPH1 VPP during Program/Erase Operations VPPH2 VPP during Program/Erase Operations VLKO VCC Erase/Program Lock Voltage 26 VPP Erase Susp.Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 1 6 6 6 6 6 3,6 3 3 0.85 VCC VCC 0.4 0.0 4.5 11.4 2.0 5.0 12.0 1.5 5.5 12.6 0.5 2.0 30 Max 35 40 25 30 4 10 200 5 12 22 10 20 200 0.8 VCC + 0.5 0.45 Unit mA mA mA mA mA A A A mA mA mA mA A V V V V V V V V V VCC = VCC Min IOL = 5.8 mA VCC = VCC Min IOH = 2.5 mA VCC = VCC Min IOH = 100 A
E
Test Condition VPP = 12.0V 5% Word Program in Progress VPP = 5.0V 10% Word Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress RAS#, CAS# = VIH Block Erase Suspended VPP VCC VPP > VCC RP# = GND 0.2V VPP = 12.0V 5% Word Program in Progress VPP = 5.0V 10% Word Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress Block Erase Suspended
NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, VPP = 12.0V or 5.0V, T = +25C. These currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns. 2. ICCES is specified with the device de-selected. If the device is read while in Erase Suspend mode, current draw is the sum of ICCES and ICC1/ICC4. 3. Block erases, word programs and lock block operations are inhibited when VPP = VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min), and above VPPH2(max). 4. Automatic Power Saving (APS) reduces ICC1 and ICC4 to 1 mA typical in static operation. 5. CMOS inputs are either VCC 0.2V or GND 0.2V. TTL inputs are either VIL or VIH. 6. Sampled, not 100% tested. Guaranteed by design.
27
5.6 AC Characteristics(11)
VCC = 3.3V 0.3V, T A = 0C to +70C Read, Program, Read-Modify-Program and Refresh Cycles (Common Parameters) Versions Sym tRP tCP tASR tRAH tASC tCAH tAR tRAD tCRP tOED tDZO tDZC tT Read Cycle Versions Sym tRC(R) tRAS(R) tCAS(R) tRCD(R) tRSH(R) tCSH(R) tRAC tCAC tAA tOEA Parameter Random read cycle time RAS# pulse width (reads) CAS# pulse width (reads) RAS# to CAS# delay time (reads) RAS# hold time (reads) CAS# hold time (reads) Access time from RAS# Access time from CAS# Access time from column address OE# access time 1,8 1,2 8 1 Notes Parameter RAS# precharge time CAS# precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold time referenced to RAS# RAS# to column address delay time CAS# to RAS# precharge time OE# to data delay OE# delay time from data-in CAS# delay time from data-in Transition time (rise and fall) 10 10 10 10 9 9 9 9 3,9 8,9 Notes
E
28F016XD-95 Min 10 15 0 15 0 20 35 15 10 30 0 0 2 4 15 Max ns ns ns ns ns ns ns ns ns ns ns ns ns Units
Units
ns ns ns ns ns ns ns ns ns ns
28
E
Sym tROH tRCS tRCH tRRH tRAL tCAL tCLZ tOH tOHO tOFF tOEZ tCDD Write Cycle
Read Cycle (Continued) Versions Parameter RAS# hold time referenced to OE# Read command setup time Read command hold time referenced to CAS# Read command hold time referenced to RAS# Column address to RAS# lead time Column address to CAS# lead time CAS# to output in Low-Z Output data hold time Output data hold time from OE# Output buffer turn-off delay Output buffer turn off delay time from OE# CAS# to data-in delay time 30 4 6,10 6,10 9 9 Notes 28F016XD-95 Min 40 5 0 0 15 75 0 0 0 30 30 Max ns ns ns ns ns ns ns ns ns ns ns ns Units
Versions Sym tRC(W) tRAS(W) tCAS(W) tRCD(W) tRSH(W) tCSH(W) tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR Parameter Random write cycle time RAS# pulse width (writes) CAS# pulse width (writes) RAS# to CAS# delay time (writes) RAS# hold time (writes) CAS# hold time (writes) Write command set-up time Write command hold time Write command hold time referenced to RAS# Write command pulse width Write command to RAS# lead time Write command to CAS# lead time Data-in set-up time Data-in hold time Data-in hold time referenced to RAS# 7,9 7,9 3,9 3 5 1 Notes
Units
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 29
E
28F016XD-95 Min 200 125 75 105 15 Max ns ns ns ns ns Units Versions 28F016XD-95 Notes Min 75 80 95 80 85 10 0 75 80 Max ns ns ns ns ns ns ns ns Units
Parameter Fast page mode cycle time (reads) Fast page mode cycle time (writes) RAS# pulse width (reads) RAS# pulse width (writes) Access time from CAS# precharge WE# delay time from CAS# precharge RAS# hold time from CAS# precharge (reads) RAS# hold time from CAS# precharge (writes)
Fast Page Mode Read-Modify-Write Cycle Versions Sym tPRWC Parameter Fast page mode read-modify-write cycle time Notes 10 28F016XD-95 Min 170 Max ns Units
30
E
Sym tCSR tCHR tWRP tWRH tRPC tRASS tRPS tCPN tCHS Refresh
Refresh Cycle Versions Parameter CAS# set-up time (CAS#-before-RAS# refresh) CAS# hold time (CAS#-before-RAS# refresh) WE# setup time (CAS#-before-RAS# refresh) WE# hold time (CAS#-before-RAS# refresh) RAS# precharge to CAS# hold time RAS# pulse width (self-refresh mode) RAS# precharge time (self-refresh mode) CAS# precharge time (self-refresh mode) CAS# hold time (self-refresh mode) Notes 10 10 10 10 10 10 10 10 10 28F016XD-95 Min 10 10 10 10 10 0 10 10 0 Max ns ns ns ns ns ns ns ns ns Units
Units
ms
Misc. Specifications Versions Parameter RP# high to RAS# going low RP# set-up to WE# going low VPP set-up to CAS# high at end of write cycle WE# high to RY/BY# going low RP# hold from valid status register data and RY/BY# high VPP hold from valid status register data and RY/BY# high Notes 10 10 10 10 10 10 0 0 28F016XD-95 Min 480 480 100 100 Max ns ns ns ns ns ns Units
31
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point.
tOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWCS tWCS(min) the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWD tCWD(min), tRWD tRWD(min), tAWD tAWD(min), then the cycle is a read-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions are satisfied, the condition of the data out is indeterminate. Either tRCH or tRRH must be satisfied for a read cycle. These parameters are referenced to the CAS# leading edge in early write cycles and to the WE# leading edge in readwrite cycles. Operation within the tRAD(max) limit ensures that tRAC(max) can be met, tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then the access time is controlled by tAA. Refer to command definition tables for valid address and data values.
6. 7. 8. 9.
10. Sampled, but not 100% tested. Guaranteed by design. 11. See AC Input/Output Reference Waveforms for timing measurements.
32
E
Sym tRP tCP tASR tRAH tASC tCAH tAR tRAD tCRP tOED tDZO tDZC tT
5.7 AC Characteristics(11)
VCC = 5.0V 0.5V, T A = 0C to +70C Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) Versions Parameter RAS# precharge time CAS# precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold time referenced to RAS# RAS# to column address delay time CAS# to RAS# precharge time OE# to data delay OE# delay time from data-in CAS# delay time from data-in Transition time (rise and fall) 10 10 10 10 9 9 9 9 3,9 8,9 Notes 28F016XD-85 Min 10 15 0 15 0 20 35 15 10 30 0 0 2 4 15 Max ns ns ns ns ns ns ns ns ns ns ns ns ns Units
33
E
28F016XD-85 Min 95 85 35 15 30 85 85 35 65 35 50 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 30 30 ns ns ns Units
34
E
Write Cycle Versions Sym tRC(W) tRAS(W) tCAS(W) tRCD(W) tRSH(W) tCSH(W) tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR Parameter Random write cycle time RAS# pulse width (writes) CAS# pulse width (writes) RAS# to CAS# delay time (writes) RAS# hold time (writes) CAS# hold time (writes) Write command set-up time Write command hold time Write command hold time referenced to RAS# Write command pulse width Write command to RAS# lead time Write command to CAS# lead time Data-in set-up time Data-in hold time Data-in hold time referenced to RAS# 7,9 7,9 3,9 3 5 1 Notes
Units
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Read-Modify-Write Cycle Versions Sym tRWC tRWD tCWD tAWD tOEH Parameter Read-modify-write cycle time RAS# to WE# delay time CAS# to WE# delay time Column address to WE# delay time OE# command hold time Notes 10 5,10 5,10 5,9,10 10 28F016XD-85 Min 175 115 65 100 15 Max ns ns ns ns ns Units
Fast Page Mode Cycle Versions Sym tPC(R) tPC(W) Parameter Fast page mode cycle time (reads) Fast page mode cycle time (writes) Notes 28F016XD-85 Min 65 65 Max ns ns Units
35
E
28F016XD-85 Min 85 65 Max 70 ns ns ns ns ns ns Units 28F016XD-85 Notes 10 Min 145 Max ns Units
Fast Page Mode Read-Modify-Write Cycle Versions Sym tPRWC Parameter Fast page mode read-modify-write cycle time
Refresh Cycle Versions Sym tCSR tCHR tWRP tWRH tRPC tRASS tRPS tCPN tCHS Refresh Versions Sym tREF Refresh period Parameter Notes 10 28F016XD-85 Min Max ms Units Parameter CAS# set-up time (CAS#-before-RAS# refresh) CAS# hold time (CAS#-before-RAS# refresh) WE# setup time (CAS#-before-RAS# refresh) WE# hold time (CAS#-before-RAS# refresh) RAS# precharge to CAS# hold time RAS# pulse width (self-refresh mode) RAS# precharge time (self-refresh mode) CAS# precharge time (self-refresh mode) CAS# hold time (self-refresh mode) Notes 10 10 10 10 10 10 10 10 10 28F016XD-85 Min 10 10 10 10 10 0 10 10 0 Max ns ns ns ns ns ns ns ns ns Units
36
E
NOTES: 1. 2. 3. 4. 5.
Misc. Specifications Versions Parameter RP# high to RAS# going low RP# set-up to WE# going low VPP set-up to CAS# high at end of write cycle WE# high to RY/BY# going low RP# hold from valid status register data and RY/BY# high VPP hold from valid status register data and RY/BY# high Notes 10 10 10 10 10 10 0 0 28F016XD-85 Min 300 300 100 100 Max ns ns ns ns ns ns Units
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point. Assumes that tRCDtRCD(max). tAR, tWCR, tDHR are referenced to tRAD(max). tOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWCStWCS(min) the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWDtCWD(min), tRWDtRWD(min), tAWDtAWD(min), then the cycle is a read-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions are satisfied, the condition of the data out is indeterminate. Either tRCH or tRRH must be satisfied for a read cycle. These parameters are referenced to the CAS# leading edge in early write cycles and to the WE# leading edge in readwrite cycles. Operation within the tRAD(max) limit ensures that tRAC(max) can be met, tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then the access time is controlled by tAA. Refer to command definition tables for valid address and data values.
6. 7. 8. 9.
10. Sampled, but not 100% tested. Guaranteed by design. 11. See AC Input/Output Reference Waveforms for timing measurements.
37
5.8 AC Waveforms
t RC t RAS RAS# t RP
E
t CSH t RCD t RSH t CAS
t CRP
tT CAS#
t RAD t ASR
t RAH
Address
Row
WE#
t OED
OE#
tAA t CAC t OEZ tOHO tOFF tOH
t RAC
Dout
Dout
: Dont Care
0533-07
38
E
t t RAS# t t t CAS# T RCD t t t RSH RC RAS CSH CRP CAS t ASR t RAH t ASC t CAH
RP
Address
Row
Column
WCS
WCH
WE# t DS t DH
Din
Din
OPEN Dout
OE# : Dont Care : Dont Care t _ t WCS (min) 0528_08 WCS >
39
E
t t RC RAS t RP t t RCD t CSH t t RSH CRP CAS t ASC t CAH
RAS#
t CAS#
ASR
RAH
Address
Row t
WP
DS t Din t QEH DH
Din
OE#
t t
QEZ
Dout
: Dont Care
0533_09
40
E
t t RWC RAS
RP
RAS#
t t T
RCD
CAS
CRP
CAS#
t
t
RAD t ASC
t
ASR
RAH
CAH
Address
Row
t
Column
t RCS t t CWD AWD RWD t CWL t RWL t WP
WE#
t DZC t t DS DH
Din
OPEN
t DZO t OED t OEA
Din
t OEH
OE#
t t AA t RAC CAC t OHO t OEZ
Dout
t CLZ
Dout
: Dont Care
0533_10
41
E
t RASP t CPRH t RP t t CAS t CP t PC t CAS t CP RSH t CAS t CRP t t t ASC CAL t CAH t t CAL t CAH
RAL t CAL
RAS# tT t t CSH
RCD
CAS# t t
Address
RAD
ASR
RAH
ASC
t ASC
CAH
Row
Column 1
Column 2
Column N
RCS
RCH
WE# t t t t t
DCZ CDD
DCZ CDD
DCZ t CDD
Din t
OPEN
DZO t OED t
OPEN
DZO t OED t DZO
OPEN
t QED
OE#
RAC
t t AA t t
t
t OH
OEA t
CPA t AA t OHO
t
t OH t OEA t t CAC
t t OHO t
OH OFF
OFF CLZ
OEZ Dout 2
QEZ Dout N
Dout
: Dont Care
0533_11
E
t
RASP
RP
RAS#
t T
t t CSH
t
t CAS t CP
t PC t CAS t CP
RSH t CAS t RP
RCD
CAS#
ASR
RAH
ASC
CAH
ASC
CAH
ASC
CAH
Address
Row
Column 1
Column 2
Column N
WCS
WCH
WCS
WCH
WCS
WCH
WE#
DS
DH
DS
DH
DS
DH
Din
Din 1
Din 2
Din N
OPEN Dout
OE# : Dont Care : Dont Care t t WCS >= WCS (min)
0533_12
Figure 12. AC Waveforms for Fast Page Mode Early Write Operations
43
E
t RASP
RP
RAS#
t T t
t t
CSH
CP
t
t PC
t CAS
CP
t
RSH
RCD
CAS
CAS
CAS#
t
RAD
ASR t RAH
ASC t CAH
t ASC t CAH
ASC t CAH
Address
Row
Column 1
t
t
Column 2
t
t
Column N
t
t
CWL
RCS
CWL
RCS
CWL
t RWL
RCS
WE#
t t t
DZC
WP t DZC
t t
WP
DS
t t
DZC
WP
DS t DH
DS DH
DH
Din
t DZO
t OED
Din 1
t
t
Din 2
DZO
t OED
Din N
t
t
DZO
t OED t OEH
OEH
OEH
OE#
t t t OEZ t t OEZ
CLZ
CLZ
CLZ
OEZ
Figure 13. AC Waveforms for Fast Page Mode Delayed Write Operations 44
E
t RASP
RP
RAS#
t t T
t
PRWC t
t CAS
t
RCD
CRP
CP
CP
t CAS
CAS
CAS#
t
RAD
ASR
ASC
t CAH
ASC
t CAH
ASC
t CAH
RAH
Address
Row
t RWD
Column 1
t t AWD
t CWD
t
Column 2
CWL
t
Column N
t CWL
t CPW
CPW t AWD
CWL
t RWL
t
t
t RCS
AWD
CWD
t
RCS
CWD
WE#
t t RCS
WP t DZC t
WP
t
t
WP
t
DZC
DS t DH
DS t DH
Din 2
DZC
DS t DH Din N
Din
t DZO t t OED
Din 2
DZO
t OED t CPA t
DZO t OED
OEH t
OEH
t OEA
OEH
OEA
OEA
OE#
t CAC t AA t
t CLZ
CAC t AA
t OHOt
CAC t AA t OHO
OHO t
t
CLZ
CLZ
t OEZ
OEZ
OEZ
E
t t RC RAS t RP
RAS#
RPC
CRP
CAS#
ASR
RAH
Address
ROW
OFF
OPEN Dout
46
E
t t RP RC t t RP RAS t RAS
RC t
RP
RAS#
t t RPC t CP t CSR t CHR t T t RPC t CP CSR t CHR t CRP
CAS#
t
t
WRH
WRP
t
WRP
WRH
WE#
Address
OFF
Dout
OPEN
47
E
t RC t RP t t RC t RP t RAS t RC t RP RAS t RSH t CHR t CRP t t RAL CAH
RAS
RAS#
t T
RCD
CAS#
t t RAD
ASR t RAH
ASC
Address
Row
Column
t t RCS
RRH t
RCH
WE#
t
DZC
CDD
Din
t DZO
t
t OEA
QED
OE#
t CAC t t RAC t AA CLZ Dout t t OFF OH t QEZ t OHO
Dout
: Dont Care
0533_17
48
E
t RASS
RPS
RAS#
CAS#
t
OFF
HI-Z
On
0533_18
49
E
t YLPH
5.0V
RP# (P)
t YHPH
3/5#
(Y)
t PLYL
3.3V
4.5V
VCC
0V
(3V,5V)
t PL5V
0533_19
Figure 19. VCC Power-Up and RP# Reset Waveforms Symbol tPLYL tPLYH tYLPH tYHPH tPL5V tPL3V RP# Low to VCC at 4.5V (Minimum) RP# Low to VCC at 3.0V (Min) or 3.6V (Max) 2 0 s 3/5# Low (High) to RP# High 0 s Parameter RP# Low to 3/5# Low (High) Notes Min 0 Max Units s
NOTES: For Read Timings following Reset, see sections 5.6 and 5.7. 1. The tYLPH and/or tYHPH times must be strictly followed to guarantee all other read and write specifications for the 28F016XD 2. The power supply may start to switch concurrently with RP# going low.
50
E
Symbol tWHRH1 tWHRH3 Symbol tWHRH1 tWHRH3
NOTES: 1. +25C, and nominal voltages. 2. Excludes system-level overhead. 3. These performance numbers are valid for all speed versions. 4. Sampled, but not 100% tested. Guaranteed by design. 5. Please contact Intels Application Hotline or your local sales office for more information for current TBD information.
51
048928.eps
Figure 20. Mechanical Specifications of the 28F016XD 56-Lead TSOP Type I Package Family: Thin Small Out-Line Package Symbol Minimum A A1 A2 b c D1 E e D L N Y Z 52 0.150 0.250 0 19.80 0.500 0.050 0.965 0.100 0.115 18.20 13.80 0.995 0.150 0.125 18.40 14.00 0.50 20.00 0.600 56 3 5 0.100 0.350 20.20 0.700 1.025 0.200 0.135 18.60 14.20 Millimeters Nominal Maximum 1.20 Notes
E 2 8 F 0 1 6 XD - 8 5
Package E = TSOP
Device Density 016 = 16 Mbit Product Family X = Fast Flash
0533_21
Valid Combinations Order Code E28F016XD 85 NOTE: 1. See Section 5.3 for Transient Input/Output Reference Waveforms. VCC = 3.3V 0.3V, 50 pF load, 1.5V I/O Levels(1) E28F016XD-95 VCC = 5.0V 10%, 100 pF load, TTL I/O Levels(1) E28F016XD-85
53
16-Mbit Flash Product Family Users Manual AP-357 Power Supply Solutions for Flash Memory AP-374 Flash Memory Write Protection Techniques AP-377 16-Mbit Flash Product Family Software Drivers, 28F016SA/SV/XD/XS AP-384 Designing with the 28F016XD AP-610 Flash Memory In-System Code and Data Update Techniques AP-614 Adapting DRAM Based Designs for the 28F016XD AB-58 28F016XD-Based SIMM Designs AB-62 Compiled Code Optimizations for Flash Memories ER-33 ETOX Flash Memory TechnologyInsight to Intels Fourth Generation Process Innovation
FLASHBuilder Utility 28F016XD Benchmark Utility Flash Cycling Utility 28F016XD iBIS Models 28F016XD VHDL/Verilog Models 28F016XD TimingDesigner* Library Files 28F016XD Orcad and ViewLogic Schematic Symbols
NOTE: 1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should contact their local Intel or distribution sales office. 2. Visit Intels World Wide Web home page at http://www.Intel.com for technical documentation and tools.
54