FDMC7672 N-Channel Power Trench MOSFET

July 2009

FDMC7672
30 V, 16.9 A, 5.7 m:
Features
Max rDS(on) = 5.7 m: at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 m: at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant

N-Channel Power Trench MOSFET

General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application
DC - DC Buck Converters Notebook battery power management Load switch in Notebook

Top Pin 1 S S S G

Bottom

D D D D D

5 6 7 8

4 3 2 1

G S S S

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 C unless otherwise noted

Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 C Operating and Storage Junction Temperature Range (Note 3) (Note 1a) TC = 25 C TA = 25 C (Note 1a) Ratings 30 20 20 16.9 50 144 2.3 -55 to +150 mJ W C A Units V V

Thermal Characteristics
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 53 C/W

Package Marking and Ordering Information

Device Marking FDMC7672 Device FDMC7672 Package MLP 3.3x3.3 Reel Size 13 Tape Width 12 mm Quantity 3000 units

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

Electrical Characteristics TJ = 25 C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 125 C VGS = 20 V, VDS = 0 V 30 13 1 250 100 V mV/C PA nA

On Characteristics
VGS(th) 'VGS(th) 'TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 PA ID = 250 PA, referenced to 25 C VGS = 10 V, ID = 16.9 A rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 15.0 A VGS = 10 V, ID = 16.9 A TJ = 125 C VDD = 5 V, ID = 16.9 A 1.2 1.9 -6 4.3 5.4 5.5 82 5.7 7.0 6.9 S m: 3.0 V mV/C

gFS

Forward Transconductance

Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2925 1050 80 0.9 3890 1400 120 pF pF pF :

Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain Miller Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 16.9 A VDD = 15 V, ID = 16.9 A, VGS = 10 V, RGEN = 6 : 13 6 31 5 40 18 9 4 24 12 49 10 57 24 ns ns ns ns nC nC nC nC

Drain-Source Diode Characteristics

VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 16.9 A VGS = 0 V, IS = 1.9 A (Note 2) (Note 2) 0.83 0.72 39 18 1.2 1.2 62 32 V ns nC

IF = 16.9 A, di/dt = 100 A/Ps

NOTES: 1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design.

a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper

b.125 C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. 3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, I AS = 17 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I AS = 7.9 A.

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

50
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V ID, DRAIN CURRENT (A)

4.5 4.0 3.5 3.0

VGS = 4 V VGS = 3.5 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

40 30 20
VGS = 3.5 V

VGS = 6 V VGS = 4.5 V VGS = 4 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

2.5 2.0 1.5 1.0 0.5 0 10

VGS = 6 V VGS = 10 V VGS = 4.5 V

10 0 0.0

VGS = 3 V

0.5

1.0

1.5

20

30

40

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage

20
SOURCE ON-RESISTANCE (m:)

1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

1.4 1.2 1.0 0.8

ID = 16.9 A VGS = 10 V
rDS(on), DRAIN TO

ID = 16.9 A

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

15

10
TJ = 125 oC

5
TJ = 25 oC

0.6 -75

-50

-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)

0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance vs Junction Temperature

50
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

Figure 4. On-Resistance vs Gate to Source Voltage

100
VGS = 0 V

40
ID, DRAIN CURRENT (A) VDS = 5 V

10 1 0.1 0.01
TJ = -55 oC

30 20
TJ = 150 oC TJ = 25 oC TJ = -55 oC

TJ = 150 oC

TJ = 25 oC

10 0 1 2 3 4
VGS, GATE TO SOURCE VOLTAGE (V)

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 16.9 A VDD = 10 V CAPACITANCE (pF)

5000
Ciss

8
VDD = 15 V VDD = 20 V

6 4 2 0 0 9 18 27 36 45
Qg, GATE CHARGE (nC)

1000
Coss

100 f = 1 MHz
VGS = 0 V

50 0.1

Crss

10

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

70 60
ID, DRAIN CURRENT (A)

20
IAS, AVALANCHE CURRENT (A)

10
TJ = 25 oC

50 40
VGS = 10 V

TJ =

125 oC

TJ = 100 oC

30
VGS = 4.5 V

20 10
Limited by Package RTJC = 4.0 C/W
o

1 0.01

0.1

10

100 200

0 25

50

75

100
o

125

150

tAV, TIME IN AVALANCHE (ms)

Tc, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Switching Capability

70
100 Ps
ID, DRAIN CURRENT (A)

Figure 10. Maximum Continuous Drain Current vs Case Temperature

P(PK), PEAK TRANSIENT POWER (W)

2000 1000

VGS = 10 V

10
1 ms 10 ms
THIS AREA IS LIMITED BY rDS(on)

100

100 ms 1s 10 s DC

0.1

SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 oC

10
SINGLE PULSE RTJA = 125 oC/W

0.01 0.01

0.1

10

100 200

1 TA = 25 oC 0.5 -4 -3 -2 10 10 10

10

-1

10

100

1000

VDS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

2 1
NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

0.01
t1

SINGLE PULSE

t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA

0.001 0.0005 -4 10

RTJA = 125 C/W

10

-3

10

-2

10

-1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

Dimensional Outline and Pad Layout

0.10 C

3.30

A B

2X

3.30

PIN#1 QUADRANT TOP VIEW 0.8 MAX

0.10 C

0.10 C

2X

RECOMMENDED LAND PATTERN

(0.203)

0.08 C

0.05 0.00

SEATING PLANE

SIDE VIEW

PIN #1 IDENT 1
(4X) 0.55 0.45 1.150

2.32 2.22 0.785

4
0.350

R0.150 0.299

2.05 1.95

8
0.65 1.95

0.40 (8X) 0.30 0.10 0.05 C A B C

BOTTOM VIEW

A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

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FDMC7672 N-Channel Power Trench MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM PowerTrench F-PFS The Power Franchise Build it Now PowerXS FRFET CorePLUS Global Power ResourceSM Programmable Active Droop CorePOWER Green FPS QFET TinyBoost CROSSVOLT QS Green FPS e-Series TinyBuck Gmax CTL Quiet Series TinyLogic GTO Current Transfer Logic RapidConfigure TINYOPTO EcoSPARK IntelliMAX TinyPower EfficentMax ISOPLANAR TinyPWM Saving our world, 1mW /W /kW at a time EZSWITCH * MegaBuck TinyWire * SmartMax MICROCOUPLER TriFault Detect SMART START MicroFET TRUECURRENT* SPM MicroPak PSerDes STEALTH MillerDrive Fairchild SuperFET MotionMax Fairchild Semiconductor SuperSOT-3 Motion-SPM FACT Quiet Series SuperSOT-6 OPTOLOGIC UHC FACT SuperSOT-8 OPTOPLANAR Ultra FRFET FAST SupreMOS UniFET FastvCore VCX SyncFET FETBench Sync-Lock VisualMax PDP SPM FlashWriter * XS * Power-SPM FPS
tm
tm

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production

2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B

www.fairchildsemi.com