Professional Documents
Culture Documents
Preferred Device
http://onsemi.com
Blocking Voltage to 800 Volts OnState Current Rating of 16 Amperes RMS High Surge Current Capability 160 Amperes Rugged Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt 100 V/msec Minimum at 125C PbFree Package is Available*
MARKING DIAGRAM
PIN ASSIGNMENT
Cathode Anode Gate Anode
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device MCR16N MCR16NG Package TO220AB TO220AB (PbFree) Shipping 50 Units / Rail 50 Units / Rail
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
MCR16N
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase JunctiontoAmbient Symbol RqJC RqJA TL Value 1.5 62.5 260 Unit C/W C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode
http://onsemi.com
2
MCR16N
130 TC, CASE TEMPERATURE ( C) 120 = CONDUCTION ANGLE 110 P(AV), AVERAGE POWER DISSIPATION (WATTS) 32 180 60 90 dc
24
= CONDUCTION ANGLE = 30
16
100
90 80 0 2 4 = 30 6 60 8 90 10 180 12 14
dc
16
Typical @ TJ = 25C
100
Maximum @ TJ = 125C
10
0.01
0.1
10
100
1000
1104
Maximum @ TJ = 25C
t, TIME (ms)
10
0.1 0.5 1.3 1.7 2.1 0.9 VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS) 2.5
http://onsemi.com
3
MCR16N
100 GATE TRIGGER CURRENT (mA) 40 25 10 5 20 35 50 65 80 95 110 125 IL , LATCHING CURRENT (mA) 30 25 20 15 10 5 0 40 25 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
10
1.0 V GT, GATE TRIGGER VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 40 25 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) I TSM , PEAK SURGE CURRENT (AMP)
TJ = 125C f = 60 Hz
NUMBER OF CYCLES
http://onsemi.com
4
MCR16N
PACKAGE DIMENSIONS
T B
4
SEATING PLANE
F T S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
Q
1 2 3
A U K
H Z L V G D N R J
STYLE 3: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com
5
MCR16/D