Fast Recovery Epitaxial Diode (FRED)

DSEI 30

IFAVM = 26 A VRRM = 1200 V trr = 40 ns

VRSM V 1200

VRRM V 1200

Type

TO-247 AD
C

DSEI 30-12A

A = Anode, C = Cathode

Symbol IFRMS IFAVM x IFRM IFSM

Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Maximum Ratings 70 26 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g

Features
G

G G G G

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

G G

International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque

Applications
G

G G G

138 0.8...1.2 6

G G

Symbol

Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 30 A;

Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A

Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

IR

VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ = 150C TVJ = 25C

Advantages
G G

VF VT0 rT RthJC RthCK RthJA trr IRM

G G G

For power-loss calculations only TVJ = TVJM

High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling

IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C

40 16

60 18

2000 IXYS All rights reserved

1-2

036

x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

DSEI 30, 1200 V

70 A 60 50 IF 40 30 20 10 0 0 1 VF 2 3 V 4

6 T =100C C VVJ= 540V R 5 4 TVJ=25C TVJ=100C TVJ=150C Qr 3 2 max. 1 0 1 10 -diF/dt 100 A/s 1000 typ. IF=30A IF=60A IF=30A IF=15A

50 A 40
IRM

TVJ=100C VR= 540V IF=30A IF=60A IF=30A IF=15A max.

30

20 typ. 10

0 0 200
-diF/dt

400 A/s 600

Fig. 1 Forward current versus voltage drop.

1.4 1.2 1.0 Kf 0.8 0.6

Fig. 2 Recovery charge versus -diF/dt.

Fig. 3 Peak reverse current versus -diF/dt.

60 1200 ns 1000 VFR 800 tfr 30 20 600 400 tfr

1.0 s 0.8 TVJ=100C VR=540V

V 50 40 VFR

IRM

trr

max. 0.6

IF=30A IF=60A IF=30A IF=15A

QR
0.4

0.4

0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 -diF/dt 400 A/s 600 typ.

10 0 0 200 diF/dt

TVJ=125C IF=30A 400 A/s 600

200 0

Fig. 4 Dynamic parameters versus junction temperature.

1.0 K/W 0.8 ZthJC 0.6

Fig. 5 Recovery time versus -diF/dt.

Fig. 6 Peak forward voltage versus diF/dt.

Dimensions

Dim. A B C D E F

Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54

Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102

0.4

G H J K L M

0.2

0.0 0.001

0.01

0.1 t

10

Fig. 7 Transient thermal impedance junction to case.

2000 IXYS All rights reserved

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