I. INTRODUCTION 1.

1 Objectives The purpose of this experiment was to study the characteristics of JFETS, observe their operation as unipolar transistors, and to observe their characteristics when selfbiased. 1.2 Background FETs behave similar to BJTs with one major difference; current goes through one type of semi conductor only. Thus, current is due to either the n channel or p channel and not both (as per the material used to construct it.) Current flow control is induced by changes of transistor channel resistance. The principle of operation of the FET (for nchannel type) II. METHODOLOGY 2.1 Equipment and Parts Digital Multi-meter (DMM): EXTECH 38332 SER#: M99009963 NI ELVIS Board Resistors: 2 x 1 k, 1 x 2.2 k, 1 x 100 k, Capacitors: 2 x 2.2 uF, 1 x 100 uF FET: MP102 DC Supply

2.2 Procedure The circuit in Figure 1 was constructed. Initially, gate source voltage was set to 0V. ID and VGS were measured. They were measured repetitively from VGS = 0 down to the value of VGS that corresponded with ID = 0A.

Figure 1. Circuit Constructed The second part of the experiment involved doing DC analysis and AC anaylsis of the FET. Circuit in Figure 2 was constructed.

Figure 2. DC/AC Analysis Circuit

For DC analysis, the signal generator and power supply were opened. IDSS, VGS and gmo values were measured. VDD was then connected and quiescent current ID was measured, as well as VGS. For AC analysis, the oscilloscope was connected with an Ac signal of 0.5Vp-p at 5KHz. III. RESULTS 1. Measurements The values measured can be seen in Table 1. Table 1. Measurements for First Experiment VGS (V) 0 0 0 0 0 -3 -3 -3 -3 -3 -6 -6 -6 -6 -6 -9 -9 -9 -9 -9 VDS (V) 15 12 9 6 3 15 12 9 6 3 15 12 9 6 3 15 12 9 6 3 ID (mA) 8.01 8.01 8.01 7.81 7.13 2.33 2.21 2.15 2.11 2.01 1.67 1.67 1.67 1.65 1.64 1.64 1.63 1.63 1.63 1.63

For VGS = 0, the graph of ID vs VDS was plotted, and it can be seen in Figure 3.

8.2 8 7.8 IDSS (mA) 7.6 7.4 7.2 7 0 5 10 VDS (V) 15 20 ID (mA)

\ Figure 3. IDSS vs VDS for VGS = 0V It was concluded that the saturation level occurred at ~8mA. For the second half of the experiment, see Appendix A for the curve plot.

IV CONCLUSION It was concluded that an FET had negative feedback characteristics, opposite to BJTs. FETs are voltage driven, while BJTs are current driven. Since in FETs there are no junctions compared to BJTs, conduction occurs through only n-type or p-type semiconductors, and thus, less junctions would mean that there would be less noise. The switching speeds on FETs were slower than BJTs.