DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, 2 columns

M3D116

BYV26 series Fast soft-recovery controlled avalanche rectifiers

Product specication Supersedes data of February 1994 1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction.

BYV26 series
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

2/3 page k (Datasheet)

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G VR continuous reverse voltage BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G IF(AV) average forward current BYV26A to E BYV26F and G IF(AV) average forward current BYV26A to E BYV26F and G IFRM repetitive peak forward current BYV26A to E BYV26F and G

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

CONDITIONS

MIN.

MAX. 200 400 600 800 1000 1200 1400 200 400 600 800 1000 1200 1400 1.00 1.05 V V V V V V V V V V V V V V A A

UNIT

Ttp = 85 C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 85 C; see Figs 6 and 7

0.65 0.68

A A

10.0 9.6

A A

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

SYMBOL IFRM PARAMETER repetitive peak forward current BYV26A to E BYV26F and G IFSM ERSM Tstg Tj non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax non-repetitive peak reverse avalanche energy storage temperature junction temperature see Figs 12 and 13 IR = 400 mA; Tj = Tj max prior to surge; inductive load switched off CONDITIONS Tamb = 60 C; see Figs 8 and 9 65 65

BYV26 series

MIN.

MAX. 6.0 6.4 30 10 +175 +175 A A A

UNIT

mJ C C

ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL VF PARAMETER forward voltage BYV26A to E BYV26F and G VF forward voltage BYV26A to E BYV26F and G V(BR)R reverse avalanche breakdown voltage BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G IR reverse current VR = VRRMmax; see Fig.16 VR = VRRMmax; Tj = 165 C; see Fig.16 trr reverse recovery time BYV26A to C BYV26D and E BYV26F and G Cd diode capacitance BYV26A to C BYV26D and E BYV26F and G f = 1 MHz; VR = 0 V; see Figs 17 and 18 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.20 IR = 0.1 mA 300 500 700 900 1100 1300 1500 5 150 V V V V V V V A A IF = 1 A; see Figs 14 and 15 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 14 and 15 MIN. TYP. MAX. 1.3 1.3 2.50 2.15 V V V V UNIT

45 40 35

30 75 150

ns ns ns pF pF pF

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

SYMBOL dI R -------dt PARAMETER CONDITIONS MIN.

BYV26 series

TYP.

MAX.

UNIT

maximum slope of reverse recovery when switched from IF = 1 A to VR 30 V and current dI F/dt = 1 A/s; BYV26A to C see Fig.21 BYV26D and E BYV26F and G

7 6 5

A/s A/s A/s

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.19. For more information please refer to the General Part of associated Handbook. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 46 100 UNIT K/W K/W

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

GRAPHICAL DATA
MSA855

BYV26 series

handbook, halfpage

handbook, halfpage

MLB533

20 15 I F(AV) (A)

10 lead length (mm) I F(AV) (A)

lead length 10 mm 0.5 1

0 0 100 T tp ( oC) 200

0 0 100 T tp ( oC) 200

BYV26A to E a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.

BYV26F and G a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.

Fig.2

Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

Fig.3

Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

handbook, halfpage

MSA856

handbook, halfpage

MLB534

I F(AV) (A)

I F(AV) (A)

0.5

0.5

0 0 100 Tamb ( C)
o

0 200 0 100 Tamb ( C)

o

200

BYV26A to E a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.

BYV26F and G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.

Fig.4

Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

Fig.5

Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYV26 series

12 I FRM (A) 10 = 0.05 8

MSA860

0.1

0.2 0.5 1

0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYV26A to E. Ttp = 85C; Rth j-tp = 46 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

10 I FRM (A) 8 = 0.05

MLB535

0.1

0.2

0.5 2 1 0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYV26F and G. Ttp = 85C; Rth j-tp = 46 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYV26 series

6 I FRM (A) 5

MSA859

= 0.05

4 0.1 3 0.2 2 0.5 1 1

0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYV26A to E Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

8 I FRM (A) 6 = 0.05

MLB536

0.1

0.2 2 0.5 1 0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYV26F and G Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

MSA854

BYV26 series

3 P (W) a = 3 2.5 2 2

3 P (W)

MLB532

1.57 2 1.42 1.42 a=3 2.5 2 1.57

0 0 0.5 I F(AV) (A) 1

0 0 0.5 I F(AV) (A) 1

BYV26A to E a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

BYV26F and G a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

handbook, halfpage

200

MSA857

handbook, halfpage

200

MLB599

Tj ( oC)

Tj ( oC)

100

100

0 0 400 800 V R (V) 1200

1000

VR (V)

2000

BYV26A to E Solid line = VR. Dotted line = VRRM; = 0.5.

BYV26F and G Solid line = VR. Dotted line = VRRM; = 0.5.

Fig.12 Maximum permissible junction temperature as a function of reverse voltage.

Fig.13 Maximum permissible junction temperature as a function of reverse voltage.

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYV26 series

MSA853

MBD427

handbook, halfpage

handbook, halfpage

IF (A) 6

IF (A) 6

0 0 2 4 6 VF (V) 8

0 0 2 4 VF (V) 6

BYV26A to E Dotted line: Tj = 175 C. Solid line: Tj = 25 C.

BYV26F and G Dotted line: Tj = 175 C. Solid line: Tj = 25 C.

Fig.14 Forward current as a function of forward voltage; maximum values.

Fig.15 Forward current as a function of forward voltage; maximum values.

103 handbook, halfpage IR (A) 102

MGC550

10 2 handbook, halfpage

MSA858

Cd (pF) BYV26A,B,C 10 BYV26D,E

10

1 0 100 Tj (C) 200

1 1 10

102

V R (V)

10

VR = VRRMmax.

BYV26A to E f = 1 MHz; Tj = 25 C.

Fig.16 Reverse current as a function of junction temperature; maximum values.

Fig.17 Diode capacitance as a function of reverse voltage, typical values.

1996 May 30

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYV26 series

10 2 handbook, halfpage

MBD437

handbook, halfpage

50 25

Cd (pF)

7 50
10

2 3
1 1 10 10 2 10 3 V R (V) 10 4
MGA200

BYV26F and G f = 1 MHz; Tj = 25 C. Dimensions in mm.

Fig.18 Diode capacitance as a function of reverse voltage, typical values.

Fig.19 Device mounted on a printed-circuit board.

handbook, full pagewidth

DUT +

IF (A) 0.5 1 t rr

10

25 V 50 0 0.25 0.5 IR (A) 1

MAM057

Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.

Fig.20 Test circuit and reverse recovery time waveform and definition.

1996 May 30

10

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYV26 series

IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR

MGC499

Fig.21 Reverse recovery definitions.

1996 May 30

11

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

PACKAGE OUTLINE

handbook, full pagewidth

3.81 max

28 min

Dimensions in mm. The marking band indicates the cathode.

, 
4.57 max

BYV26 series

0.81 max

28 min

MBC880

Fig.22 SOD57.

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

1996 May 30

12