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MJE340
High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350
1. Emitter
MJE340
Typical Characteristics
1000
VCE = 2V
1.2
IC = 10IB
1.0
100
0.8
V BE(sat)
0.6
V CE(sat)
0.4
10
0.2
1 1 10 100 1000
10
32
28
24
10
s
20
0 50
s 1m
DC
16
12
0.1
0.01 1 10 100
0 0 25 50
o
75
100
125
150
175
MJE340
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
3.20 0.10
11.00
0.20
13.06
16.10
0.20
0.50 0.05
+0.10
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOS EnSigna FACT FACT Quiet Series FAST
DISCLAIMER
FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP
PowerTrench QFET QS QT Optoelectronics Quiet Series LILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. G