TLP5211,TLP5212,TLP5214

TOSHIBA Photocoupler GaAs Ired & PhotoTransistor

TLP5211,TLP5212,TLP5214
Programmable Controllers AC/DCInput Module Solid State Relay
The TOSHIBA TLP5211, 2 and 4 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode. The TLP5212 offers two isolated channels in an eight lead plastic DIP package, while the TLP5214 provides four isolated channels in a sixteen plastic DIP package.  Collectoremitter voltage: 55 V (min)  Current transfer ratio: 50% (min) Rank GB: 100% (min)  Isolation voltage: 2500 Vrms (min)  UL recognized made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349 TOSHIBA Weight: 0.26 g 115B2 Unit in mm

Pin Configurations (top view)

TLP521-1 1 2 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 4 3 1 2 3 4

TLP521-2 8 7 6 5 1 2 3 4 5 6 7 8

TLP521-4 16 15 14 13 12 11 10 9 TOSHIBA Weight: 1.1 g 1120A3 TOSHIBA Weight: 0.54 g 1110C4

1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector

: Anode 1, 3, 5, 7 : Cathode 2, 4, 6, 8 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector

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TLP5211,TLP5212,TLP5214
Maximum Ratings (Ta = 25C)
Rating Characteristic Forward current Forward current derating LED Pulse forward current Reverse voltage Junction temperature Collector emitter voltage Emitter collector valtage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage Symbol IF IF /C IFP VR Tj VCEO VECO IC PC PC /C Tj Tstg Topr Tsol PT PT /C BVS 250 2.5 2500 (AC, 1min., R.H. 60%) 150 1.5 125 55~125 55~100 260 (10 s) 150 1.5 (Note 1) TLP521 1 70 0.93 (Ta 50C) TLP521 2 TLP521 4 50 0.5 (Ta 25C) Unit mA mA /C A V C V V mA 100 1.0 mW mW /C C C C C mW mW /C Vrms

1 (100 pulse, 100pps) 5 125 55 7 50

(Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

Recommended Operating Conditions

Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min   25 Typ. 5 16 1  Max 24 25 10 85 Unit V mA mA C

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TLP5211,TLP5212,TLP5214
Classi  fication (*1) A Rank Y TLP521 Rank GR Rank BL Rank GB TLP521 2 TLP521 4 A Rank GB Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min Max 50 50 100 200 100 50 100 600 150 300 600 600 600 600 Marking Of Classification Blank, Y, Y, G, G, B, B, GB Y, Y G, G B, B G, G, B, B, GB Blank, GR, BL, GB GR, BL, GB

Type

*1: Ex. rank GB: TLP521 1 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP521 1 (GB): TLP521 1, TLP521 2 (GB): TLP521 2

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TLP5211,TLP5212,TLP5214
Individual Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage LED Reverse current Capacitance Collector emitter breakdown voltage Detector Emitter collector breakdown voltage Collector dark current Capacitance (collector to emitter) Symbol VF IR CT V(BR) CEO V(BR) ECO ICEO CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 24 V VCE = 24 V, Ta = 85C V = 0, f = 1 MHz Min 1.0 55 7 Typ. 1.15 30 10 2 10 Max 1.3 10 100 50 Unit V A pF V V nA A pF

Coupled Electrical Characteristics (Ta = 25C)

Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA Collector emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB MIn 50 100 30 Typ. 60 0.2 Max 600 600 0.4 0.4 V Unit %

Saturated CTR

IC / IF (sat)

Isolation Characteristics (Ta = 25C)

Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min 2500 Typ. 0.8 1011 5000 5000 Max Unit pF Vrms Vdc

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TLP5211,TLP5212,TLP5214
Switching Characteristics (Ta = 25C)
Characteristic Rise time Fall time Turn on time Turn off time Turn on time Storage time Turn off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 k (Fig.1) VCC = 5 V, IF = 16 mA VCC = 10 V IC = 2 mA RL = 100 Test Condition Min Typ. 2 3 3 3 2 15 25 Max s s Unit

Fig.1 : SWITCHING IF

TIME

TEST CIRCUIT IF RL VCC VCE VCE tON tS 4.5V 0.5V tOFF VCC

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TLP5211,TLP5212,TLP5214
TLP521-2 TLP521-4

TLP521-1
100

IF Ta
100

IF Ta

Allowable forward current IF (mA)

60

Allowable forward current IF (mA)

0 20 40 100

80

80

60

40

40

20

20

0 -20

60

80

0 -20

20

40

60

80

100

Ambient temperature Ta (C)

Ambient temperature Ta (C)

TLP521-1
240

PC Ta

120

TLP521-2 TLP521-4

PC Ta

200

100

Allowable collector power dissipation PC (mW)

Allowable collector power dissipation PC (mW)

160

80

120

60

80

40

40

20

0 -20

20

40

60

80

100

0 -20

20

40

60

80

100

Ambient temperature Ta (C)

Ambient temperature Ta (C)

TLP521-1
3000

IFP DR
Pulse width 100s Ta = 25C

3000

TLP521-2 TLP521-4

IFP DR
Pulse width 100s Ta = 25C

Allowable pulse forward current IFP (mA)

500 300

Allowable pulse forward current IFP (mA)

10-3

1000

1000 500 300

100 50 30

100 50 30

10 3

10-2

10-1

100

10 3

10-3

10-2

10-1

100

Duty cycle ratio DR

Duty cycle ratio DR

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TLP5211,TLP5212,TLP5214

100 50 30

IF VF
Ta=25C -2.8

VF/Ta IF

Forward voltage temperature coefficient VF/Ta (mV/C)

(mA)

-2.4

Forward current IF

10 5 3

-2.0

-1.6

1 0.5 0.3 0.1 0.4

-1.2

-0.8 -0.4 0.1

0.6

0.8

1.0

1.2

1.4

1.6

0.3

10

30

Forward voltage

VF

(V)

Forward current

IF (mA)

1000 Pulse width 10s

IFP VFP
10
1

ICEO Ta
(A)
10V 5V

(mA)

500 Repetitive frequency =100Hz 300 Ta = 25C

100 50 30

Collector dark current ICEO

10

VCE=24V

IFP

Pulse forward current

10

-1

10

-2

10 5 3 1 0

10

-3

10 0.4 0.8 1.2 1.6 2.0 2.4

-4

40

80

120

160

Pulse forward voltage VFP

(V)

Ambient temperature Ta ()

IC VCE
80 Ta=25C 25 50mA

IC VCE
40mA 30mA 20mA Ta=25C

(mA)

60 50mA 30mA 20mA 15mA 10mA 20 IF=5mA PC(MAX.)

(mA) IC Collector current

20

IC

Collector current

15

40

10mA

10

5mA

IF=2mA

10

0 0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Collector-emitter voltage

VCE

(V)

Collector-emitter voltage

VCE

(V)

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TLP5211,TLP5212,TLP5214

100

IC IF

Ta = 25C VCE=5V 50 VCE=0.4V Current transfer ratio IC /IF (%)

30

500 300 Sample A

IC/IF IF

100 Sample 50 30 B

(mA)

10 Sample 5 3 Sample 1 0.5 0.3 B A

IC

Ta = 25C VCE=5V VCE=0.4V

Collector current

10 5 0.3

10

30

100

Forward current

IF

(mA)

VCE(sat) Ta
0.20 IF = 5mA IC = 1mA

0.1

Collector-emitter saturation voltage VCE(sat) (V)

0.05 0.03 0.3 1 3 10 30 100

0.16

0.12

Forward current

IF

(mA)

0.08

0.04

-20

20

40

60

80

100

IC Ta
100 25mA 50 30 10mA 5mA 10 5 3

Ambient temperature Ta ()

VCE = 5V
1000 500 300

RL Switching Time
Ta = 25C IF = 16mA VCC= 5V

IC (mA)

tOFF
(s)
100 50 30

Collector current

1 0.5 0.3

1mA

Switching time

tS

10 5 3

IF = 0.5mA

tON

0.1

-20

20

40

60

80

100

1 1

10

30

100

300

Ambient temperature Ta ()

Load resistance RL (k)

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TLP5211,TLP5212,TLP5214

RESTRICTIONS ON PRODUCT USE

000707EBC

 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc..  The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk.  Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.  The products described in this document are subject to the foreign exchange and foreign trade laws.  The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.  The information contained herein is subject to change without notice.

2002-09-25

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