AO3401

30V P-Channel MOSFET

General Description
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS=-2.5V) -30V -4.0A < 50m < 60m < 85m

SOT23 Top View Bottom View D

S G S

G S

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
B C

Maximum -30 12 -4 -3.2 -27 1.4 0.9 -55 to 150

Units V V A

VGS TA=25 C TA=70 C TA=25 C TA=70 C ID IDM PD TJ, TSTG

W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 70 100 63

Max 90 125 80

Units C/W C/W C/W

Rev 6: Feb. 2011

www.aosmd.com

Page 1 of 5

AO3401

Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V C TJ=55 VDS=0V, VGS= 12V VDS=VGS ID=-250A VGS=-10V, VDS=5V VGS=-10V, ID=-4.0A RDS(ON) Static Drain-Source On-Resistance TJ=125 C VGS=-4.5V, ID=-3.7A VGS=-2.5V, ID=-2A gFS VSD IS ISM Forward Transconductance Diode Forward Voltage Pulsed Body-Diode CurrentB 645 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 4 80 55 7.8 14 VGS=-10V, VDS=-15V, ID=-4.0A 7 1.5 2.5 6.5 VGS=-10V, VDS=-15V, RL=3.75, RGEN=3 IF=-4.0A, dI/dt=100A/s 3.5 41 9 11 3.5 12 VDS=-5V, ID=-4.0A IS=1A,VGS=0V -0.5 -27 41 62 47 60 17 -0.7 -1 -2 -27 50 75 60 85 -0.9 Min -30 -1 -5 100 -1.3 Typ Max Units V A nA V A m m m S V A A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 6: Feb. 2011

www.aosmd.com

Page 2 of 5

AO3401

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 10V 20 4.5V 15 15 -ID (A) -2.5V 10 5 5 VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C -ID(A) 10 20 VDS=-5V

1.8 1.6 1.4 1.2 1 0.8 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 0 25 50 75 100 125 150 175 VGS=-2.5V ID=-2A VGS=-10V ID=-4A VGS=-4.5V 17 ID=-3.7A

80 RDS(ON) (m ) VGS=-2.5V 60

VGS=-4.5V

40 VGS=-10V 20

5 2 10

0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

150 ID=-4A 130 110 RDS(ON) (m ) -IS (A) 90 70 50 30 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0 2 25C 125C

1.0E+01 1.0E+00

40
1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C

Rev 6: Feb. 2011

www.aosmd.com

Page 3 of 5

AO3401

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=-15V ID=-4A 8 Capacitance (pF) 800 Ciss -VGS (Volts) 6 600 1000

400 Coss

200 Crss 0

0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15

5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics

25

100.0

10000 TA=25C

10.0

10s
Power (W)

1000

-ID (Amps)

RDS(ON) limited
1.0

100s 1ms 10ms TJ(Max)=150C TA=25C

100

0.1

10

10s DC
10 100

1 0.00001 0.001 0.1 10 1000

0.0 0.01 0.1 1 -VDS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse

PD Ton

T 10 100 1000

0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 6: Feb. 2011

www.aosmd.com

Page 4 of 5

AO3401

Gate Charge Test Circuit & Waveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

Resistive Switching Test Circuit & Waveforms

RL Vds Vgs Vgs Rg DUT
VDC

Vgs Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Vds Isd Vgs Ig

VDC

+ Vdd -Vds

Rev 6: Feb. 2011

www.aosmd.com

+
Charge
ton td(on) tr t d(off) toff tf

Vds

Qgs

Qgd

Vdd

90%

10%

E AR= 1/2 LIAR

Vds BVDSS Vdd Id I AR

Q rr = - Idt

-Isd

-I F

dI/dt -I RM Vdd

Page 5 of 5