RAI UNIVERSITY, GUJARAT

End-Semester Examination MAY 2014

B.Tech EngineeringSemester VI


Subject: VLSI & Embedded Systems

Subject Code: Total Marks: 100
Enrollment No.:
Date:
Time: 3 hours


Q-1 Multiple Choice Questions:(1 mark each)
1. The speed power product of any MOS technology is measured in
(a) KJ (b) MW-Sec
(c) PJ (d) Joules
2. The technology which is characterized by high speed
(a) CMOS (b) BiCMOS
(c) GaAs (d) ECL
3. Latch up in CMOS device can be avoided by
(a) Increasing temp (b) doping Control
(c) Increasing the substrate resistance (d) Decreasing substrate doping level
4. Material used for metallization is:
(a) Aluminium (b) Copper
(c) Silver (d) Tungsten
5. In modern CMOS fabrication, the pattern on each layer is created by:
(a) Ion Implantation (b) Oxidation
(c) Photo lithography (d) Encapsulation
6. The following device is less likely to suffer latch up
(a) NMOS (b) CMOS
(c) BiCMOS (d) PMOS
7. The size of a transistor is usually designed in terms of
(a) Drain (b) Source
(c) Metal (d) Channel Length
8. What is the cause of storage time in a bipolar transistor?
(a) The time taken to remove excess
charge stored in the base region as a
result of saturation
(b) The 'memory effect' of the device
(c) The inertia of the majority charge
carriers
(d) The inertia of the minority charge carriers
9. Which of the following statements is incorrect?
(a) CMOS gates have very good noise
immunity that is typically 10% of
the supply voltage
(b) When a CMOS gate is static it has negligible
power consumption.
(c) CMOS gates have logic levels close
to the supply rails
(d) Most CMOS circuits operate from a single
supply voltage of from 5 to 15 V
10. Which of the following statements is incorrect?
(a) ECL suffers from low noise
immunity
(b) ECL has high power consumption.
(c) ECL is widely used in high-speed
applications
(d) ECL is one of the fastest forms of electronic
logic.


























































Q-2 Answer in short/Define:(2 marks each)
1. Explain Electric field Intensity?
2. What do you mean by Potential?
3. Define Electric Dipole?
4. State Bio-savarts Law?
5. State Amperes Circuital law?

Q-3 Answer in brief:(3 marks each)
1. Define and prove Potential Difference?
2. Determine H at P
2
(0.4,0.3,0) in the field of an 8A filamentary current directed inward
from infinity to the origin on the positive x axis and then outward to infinity along the y
axis?
3. State and prove Stokes theorem?

Q-4 Answer the following:(5 marks each)
1. What do you mean by magnetic Flux and Magnetic flux density?
2. If H= 0.2z
2
a
x
for z > 0, and H = 0 elsewhere as shown in figure below. Calculate
. H dL

about a square path with side d, centered at (0,0,z

1
) in the y = 0 plane where
z
1
> d/2?
3.
Given the potential field,
2
2 5 V x y z , and a point P(-4, 3, 6), we wish to find several
numerical values at point p: the potential V,the electric field intensity E, the direction of
E, the electric flux density D, and the volume charge density
v
?

Q-5 Answer the following:(7 marks each)
1. State and prove Curl function?
2. Define and Prove Biot Savart Law?
3. Define and prove Amperes circuital law?
Q-6 Answer in detail: (10 marks each)
1. State and prove Energy density in the electrostatic field?
2. a) State and prove potential gradient function for rectangular, cylindrical and spherical
co-ordinates?
b) For the given non uniform field
2
x y z
E ya xa a
Determine the work expended in carrying 2C from B(1,0,1) to A(0.8,0.6,1) along the
shorter arc of the circle;

2 2
x y , z ?