1

Hello, in
off snubb
spike acr
the thyris
and how

The seco
trigger th
from the
transform

(Refer Sl

It is a sp
signals th
operation
different.
transform
n my last cla
ber. These c
ross the SCR
stor. Now, w
do we limit
ond point th
he thyristor,
e control cir
mer.
lide Time: 2
pecial type o
hat is transm
n of this tran
. See, in a
mer, ferrite c
Dep
India
ass we discu
circuits are r
R. How did w
we know that
the voltage
hat we discu
large numb
rcuit to the
:25)
of transforme
mitting from
nsformer is s
50 hertz tra
ore is used.
Powe
Prof. B
partment of
an Institute
L
ssed the nee
required to
we limit dr b
t the current
spike across
ussed was a
ber of high f
gate? We u
er. Why it is
m one side
same as that
ansformer, w
er Electronic
B.G. Fernan
Electrical E

of Technolo
ecture - 6
ed for snubb
protect the
by dt? We c
t through the
s the SCR? W
a high frequ
frequency pu
use a pulse

s a special ty
to the anoth
t of a 50 her
we use a lam
cs
ndes
Engineering
ogy, Bomba
ber circuits,
device again
connected a
e inductor ca
We use a RC
uency pulse
ulses. How
transformer
ype? The sig
her side is
rtz transform
minated cor
g
ay
the turn on
nst dr by dt
small induc
annot chang
C network.
pattern is
do we trans
. See here,

gnals or the
very high.
mer. Only th
re whereas a
snubber and
t and the vo
ctor in series
e instantane
recommend
smit these si
this is the
frequency o
The princip
he type of co
a high frequ
d turn
oltage
s with
ously
ed to
ignals
pulse
of the
ple of
ore is
uency
2

(Refer Sl

Ferrite co
frequency
top it is w
the numb
power cir

Now, wh
are differ
slow dev
one is th
frequency
















lide Time: 3
ore, of cours
y application
written, 1 is
ber of turns
rcuit from th
hat are the d
rent types of
vices, they ar
he inverter
y application
:10)
se this is a b
n. So, there
to 1, it imp
in the secon
he control cir
different type
f SCRs also
re used in th
grade SCR.
n. So, here is
bigger ferrite
are 4 termin
plies that the
ndary windin
rcuit.
es of SCRs
o. One of th
e circuit whe
. So, these
s the module

e core, a soli
nals, primary
e number of
ng. So, this i
s? We had d
hem is see h
erein the fre
are fast dev
e that has tw
id ferrite cor
y winding an
turns in the
is a pulse tra
different typ
here, the con
equency coul
vices, fast d
wo thyristors.

re, these are
nd the second
e primary wi
ansformer u
pes of diodes
nverter grade
ld be 50 hert
devices so s
.
suitable for
dary winding
inding is sam
used to isolat
s. Similarly
e SCR. Thes
tz and the se
suitable for
r high
g. On
me as
te the
there
se are
econd
high
3

(Refer Sl

(Refer S

Inverter g
volts. 2
terminals
cathode o
here cath
flows.

lide Time: 4
Slide Time: 5
grade thyris
thyristors, s
s, 3 power t
of another.
hode and ga
:46)
5:02)
tor, the ratin
see they are
terminals ha
See, these 2
ate. See the
ng of each th
e connected
ave been br
2 terminals f
contact area


hyristor is 4
in this fash
ought out, a
for supplyin
a, this anode
45 ampere an
hion. See, t
anode of on
ng the gate s
e, cathode s


nd the volta
these are th
ne, a commo
signal, catho
so generally
age rating is
he 2 thyristo
on point an
ode and gate
the load cu
1200
ors, 3
nd the
e, see
urrent
4

So, see t
and catho
elegant it

(Refer Sl

So, that
popularit
rating of

(Refer Sl

the surface a
ode. A small
t looks.
lide Time: 6
is why I to
ty of power
this thyristo
lide Time: 7
area that is a
l current is f
:32)
ld you in m
r electronics
or is given he
:05)
available wh
flowing from
my introduct
is the adva
ere, I copied
hereas, see th
m the gate an

ive lecture t
ances in po
d from, I dow

he surface a
nd it is moun
that the one
ower semico
wnloaded thi
area that is a
nted on a he

e of the mai
onductor tech
s data sheet

available for
at sink. See,
in reason fo
hnology. So
from their s
r gate
, how
or the
o, the
ite.
5

See, 46F
is only 0
repetitive
RMS cur
surge cur
1300 am
required

(Refer Sl

See, the
See, the
current, r
See, the
milli amp
are the so

So, that i
reverse b
regulator
voltage a
single ph
So defin
thyristors
was deve





. F stands fo
0 8, the volt
e peak, forw
rrent rating,
rrent rating,
mperes and a
to determine
lide Time: 00
critical rate
gate trigge
rating is 45
gate trigger
peres. See, I
ome of the im
is about the
biased, it doe
rs, see, I hav
applied to th
hase AC mac
nitely, I nee
s separately
eloped in 196
or first 0 8 do
tage rating
ward off state
120 ampere
1300 ampe
another imp
e the fuse. 84
0:08:41 min
of rise of on
r current I
G
amperes. Su
voltage 1.4
I told you th
mportant par
conventiona
es not condu
ve a 50 hert
he machine
chine. So, it
d to connec
in anti paral
64 by genera
ot dot till 13
is 800 volts
e and revers
es whereas,
res. I explai
portant para
450 amperes
n)
n state curre
GT
150 milli
urge current
volts, holdi
hat latching
rameters of t
al thyristor w
uct. What if
tz AC suppl
or voltage a
t requires an
ct 2 thyristo
llel, there is
al electric.
. This stands
s. If it is 13
se voltages.
the average
ined to you,
ameter, I squ
s squared s.

ent, di by dt
i amperes. S
is 1300 amp
ing current 2
current is hi
the thyristor
which condu
input is AC?
y, 230 volts
applied to th
n AC supply
ors in anti p
a device ava
s for the vari
3, the voltag
These are th
on state cur
what is sur
uared t cur

critical is 12
So therefore
mperes, gate c
250 milli am
igher than th
.
ucts when it
? Output is a
s and there i
he fan to va
y. I have an i
parallel. No
ailable what
ious voltage
ge rating is
he various v
rrent is 45 a
rge current o
rrent, square

20 ampere f
e, just see t
current is 15
mperes, latch
he holding c
is forward b
also AC. Lik
is a regulato
ary the speed
input AC, o
ow, instead
is known as
e ratings. See
1300 volts.
voltages. See
amperes. See
or when it f
ed time rati
for micro sec
the gain av
50 milli amp
hing current
current. So,
biased. When
ke, you know
or to regulat
d. Fan is ag
utput is also
of connecti
s the triac. A
e, if it
See,
e, the
e, the
flows,
ng is
cond.
erage
peres.
1000
these
n it is
w fan
te the
gain a
o AC.
ing 2
A triac
6

(Refer Sl

It has a c
parallel.
am callin
anode of
in anti pa
device, th

So theref
respect to
should be
be trigge
current w
















lide Time: 1
complicated
See, here is
ng this termi
f one is tied t
arallel. So, n
here are 2 po
fore, how do
o MT
1
and s
e positive w
ered when M
with respect t
1:18)
structure bu
the connecti
inals as MT
to cathode o
now it is go
ower termina
o I trigger? A
upplying a p
ith respect to
MT
2
is negati
to MT
1.
ut then funct
ion, I have 1
1
and this as
f another thy
ing to be a b
als but then t
A triac can
positive gate
o MT
1
and a
ive with resp

tionally it is
1 thyristor, th
s MT
2.
See, I
yristor. So, t
bidirectional
there is only
be triggered
e current with
a positive ga
pect to MT
1
equivalent t
hyristor 2, g
I cannot cal
there are 2 e
l device. Re
y 1 gate term
d by see here
h respect to
ate current w
and by a ne

to 2 thyristo
gates are tied
ll anode and
quivalent thy
emember, it
minal.
e, making M
MT
1.
See, I
with respect t
egative curre
ors connected
d together G
d cathode bec
yristor conn
is a bidirect
MT
2
positive
I will repeat,
to MT. It can
ent, negative
d anti
and I
cause
nected
tional
e with
, MT
2
n also
e gate
7

(Refer Sl

So, here
could be
conductio
the same
regulator
everythin

(Refer Sl

So, there
conducto
lide Time: 13
are the cha
e thyristor 2
on, forward
e thyristor.
rs. I told you
ng is mounte
lide Time: 14
e is no powe
or device, ha
3:43)
aracteristics.
2. These are
blocking, fo
So, these a
u, I showed
ed inside a sw
4:31)
er dissipation
as three legs
2 thyristors
e the VI ch
orward block
are the VI c
d you a very
witch board.
n. That is wh
. MT
1
MT
2

s connected
haracteristics
king mode fo
characteristic
y elegant fan


hy it is so sm
and gate, th
in anti para
s, negative r
or another th
cs. This tria
n regulator,
mall and I to
his are nothin

allel, say thy
resistance, r
hyristor, con
acs are very
just the kno

old you, this
ng but a tria
yristor 1 and
regional uns
nduction mod
y popular in
ob is brough
s is a power
ac. This is a
d this
stable
de for
n fan
ht out
semi
triac,
8

this is a t
what is
thyristor.

(Refer Sl

The curr
point J
1
a
voltage i
this is th
becoming

Now, thi
voltage a
connecte
current h

See, this
It has to
breakdow
connecte
voltage a
this dv by

See, I hav
by dt rati
Why it is
current r
switching
gate sign
triac. So, tria
a limitation
.
lide Time: 15
rent has reve
and J
2,
J
1
an
s applied acr
he turn off c
g 0, the volta
is is for 1 th
appearing ac
d in anti par
has become 0
apprehensio
block in th
wn voltage. B
d back to ba
appears acro
y dt or in oth
ve written h
ing is less fo
s an ideal sw
rating, maxi
g or turn on
nal.
acs are also u
of a triac?
5:29)
ersed, it has
d J
3
have at
ross the thyr
characteristic
age across it
hyristor, the
cross the en
rallel. Now,
0.
on was not th
e reverse di
But then in
ack. So, wh
oss another t
her words, tr
ere, it has le
or the triac.
witch? It requ
mum gate c
period. Wh
used in light
See, I am
attained a p
ttained the v
ristor and thi
cs that we s
t is very diffe
e turn off ch
ntire combin
if this dv by
here when in
irection as lo
a triac, there
hen a reverse
thyristor. So
riac has a les
ess time than
So, now let
uires just a sh
current is 1
hen the curre
t intensity co
m just showi

peak value,
voltage block
is happens, t
studied for
ferent from 0
haracteristics
ation across
y dt is high, i
n the case of
ong as has v
e are 2 thyri
e voltage is
o, the anothe
ss time than
n the thyristo
me sum up
harp pulse to
50 milli am
ent is higher
ontrol, room
ing you the
the reverse
king capabil
this current d
the thyristor
0.
s. When it i
s the triac. S
it may trigge
f thyristor be
voltage acro
istor, the tria
being applie
er thyristor m
a thyristor to
or to recover
the thyristor
o turn on. If
mperes that
than the lat
m temperature
e turn off ch

recovery cu
lity. So ther
decays at a v
r. So, when
is turning of
So, there is
er another th
ecause there
oss it is less
ac is equival
ed to 1 of th
may get trig
o recover its
r its blocking
r. It is nearly
f 45 ampere t
is required
tching, you c
e control but
haracteristic
urrent and a
refore, a neg
very fast rate
n this curren
ff there is a
another thy
hyristor when
is only 1 de
than the re
lent to 2 thy
hem, the for
ggered becau
s blocking po
g power or th
y an ideal sw
thyristor, av
only during
can withdraw
t then
of a
at this
gative
e. So,
nt has
high
yristor
n this
evice.
everse
yristor
rward
use of
ower.
he dv
witch.
erage
g this
w the
9

So, the g
block bot
as well a
point, de
be turned
applying
of the thy

(Refer Sl

So, this i
gate. To
less than

So, how
modifica
GTO wh
signal, w











gate power re
th positive a
as reverse, al
vice is very
d off by the
a negative g
yristor.
lide Time: 20
is the limita
turn off the
the holding
do I make
ations? Answ
hich is capab
we can turn o
equirement i
as well as ne
lso high volt
rugged, stur
application
gate current
0:25)
ation, inabili
thyristor, cu
current. Till
this device
wer is yes. S
ble of turnin
ff as well as
s very small
egative volta
tage, high cu
rdy but then
n for control
through the
ity to turn o
urrent flowi
l then it cont
which is ca
o, there is a
ng on as wel
s turn on a G
l compared t
age. The ratin
urrent devic
n what is the
signal at th
e gate. So se

ff by applic
ng through
tinues to con
apable of tu
a device wha
ll as turning
GTO. See her
to the power
ng of this th
ces are availa
e limitation?
he thyristor
ee here, I hav
cation of a c
it should be
nduct.
urning off th
at is known
off through
re, a gate tur
r rating of th
hyristor is 12
able in the m
It has 1 lim
gate. It cann
ve summed

control signa
e reduced to
hrough gate?
as the gate t
h gate. By ap
rn off thyrist
he thyristor. I
200 volts for
market. The
mitation. It ca
not turn it o
all the prop
al at the thy
a value whi
? Can I do
turn off thyr
pplying a co
or, GTO.
It can
rward
forth
annot
off by
erties
yristor
ich is
some
ristor,
ontrol
10

(Refer Sl

A small p
ampere G
turned of
Anode ca
are the 2

(Refer Sl

What is
similar to
lide Time: 2
power GTO
GTOs develo
ff by negati
athode struc
symbols use
lide Time: 23
the structure
o SCR, P
1
N
1:50)
was develop
oped by Hit
ive I
G
and h
cture is the s
ed to represe
3:00)
e? In what w
N
1
P
2
N
2.
Th
ped by GE,
achi and To
here are the
ame, across
ent a GTO.
way it is str
hen, in what

general elec
oshiba. It can
2 symbolic
here are 2 a

ructurally di
t way it is d
ctric in 1961
n be turned
c representat
arrows, posi
ifferent from
different? H

and in 1981
on by positi
tions of the
itive I
G
nega

m a thyristor
ow it is bei
1, a 2.5 kv, 1
ive I
G
and ca
GTO, the s
ative I
G.
So,
r? It has 4 l
ing turned o
1 kilo
an be
same.
these
layers
off by
11

applying
thickness

The seco
I will sho

(Refer Sl

See, we h
There is
indicates
similar to

So, there
there are
and all th
cathode.
parallel,
seen as a

Anode is
sink form
and catho
is someth
advantag
increased
cathode,
cathode a

a negative
s of P
2
is less
ond differenc
ow you a 3D
lide Time: 24
have P or P
1 here, see
the doping
o SCR, N
2
la
e are large nu
large numb
he cathodes
So, what y
as if there i
a large numb
s same, catho
ms the main
ode structure
hing like thi
ge of doing li
d, also the di
this is inte
and gate has
I
G
to the ga
s in the case
ce is N
2
layer
D picture and
4:20)
1
N
1
P
2.
Now
here, again
level is ver
ayer is highly
umbers of sm
ber of GTOs
of these GT
you can say
is a GTO he
er of GTOs
ode is also s
cathode and
es are highly
is, this is in
ike a inter d
istance betw
er digitizatio
reduced.
ate? We wil
of a GTO. W
r is removed
d it will be ve
w, N
2
is in s
a separate N
ry low and th
y doped, N
1
l
mall islands
s. See here,
Os are conn
is a GTO c
ere or anoth
s connected i
same, all the
d another dif
y inter digiti
nter digitizati
digitization?
ween the gate
on, cathode
ll see. See h
Why, I will t
d by itching
ery clear, see

small places,
N
2
layer, a s
he plus indi
layer is very
of cathode
P
1
N
1
P
2
N
2
nected to a c
can be seen
her GTO her
in parallel. W
e cathodes ar
fference betw
ized. What d
ion, this cou
The advanta
and a catho
periphery h
here P
1
N
1
P
2
tell you som
in place whe
e here.
, small islan
small island
icates doping
y lightly dop
or in other w
2,
P
1
N
1
P
2
N
common hea
n as a large
re, another G
Why parallel
re connected
ween a GTO
do you mean
uld be inter
age is that no
ode is very sm
has increase
2
N
2,
one of
me time later.
ere gate con

nds of N
2
are
of N
2
layer
g level is ve
ed.
words, what
N
2
see here
at sink and t
number of
GTO here. O
l?
d to 1 heat s
O and a SCR
n by highly i
digitization
ow the catho
mall. If this
ed the dista
the differen

ntacts are situ
e found, see
r. See, this m
ery high. So
t I can say is
also P
1
N
1
P
that forms a
f small GTO
One GTO ca
sink and that
is in a GTO
inter digitize
n. So, what i
ode peripher
is gate and t
ance between
nce is
uated.
here.
minus
, it is
s see,
P
2
N
2

main
Os in
an be
t heat
O gate
ed? It
is the
ry has
this is
n the
12

What is t
the struc
doped, ju
though J
and when

Now, the
layer pen

(Refer Sl

See here
with N
1
o
it is reve
had a P s
now J
1
ca
is J
3.

The reve
block neg
also kno
junction
voltage th
turn off p
off of a G
N minus




the advantag
ture again. I
unction J
2
a
3
is also reve
n is forward
ere is anothe
netrates this P
lide Time: 2
in this figur
or N minus l
erse biased.
structure. No
annot block
erse voltage
gative voltag
wn as a sym
J
2
and it ca
hat is becau
process. Now
GTO. See in
P.
ge of this int
I have a P l
and J
3.
So, w
erse biased,
biased J
2
blo
r structure. S
P
1
layer and
8:49)
re, this N plu
layer. So, in
See, when it
ow, because
the negative
blocking ca
ge or a anod
mmetrical G
annot block
se of J
3,
anot
w, how it sp
this, a 3D fi
er digitizatio
layer, it is e
when it is re
the reverse
ocks the volt
See here, var
d it is directly
us layer pene
other words
t is reverse
of this N pl
e voltage, the
apability is v
de short struc
GTO. Why i
the negativ
ther advanta
eeds up the
figure shown
on? I will tel
equivalent to
everse biase
blocking vo
tage.
riant a N plu
y in contact w

etrates at reg
s there is a d
bias, entire
us which is
e only 1 jun
very small.
cture cannot
it can block
ve voltage. I
age of doing
turn off pro
n, here is sam
ll you some
o P
1
in SCR
ed, J
1
should
oltage of J
3
i
us layer in ot
with the N m
gular interva
direct shot be
voltage as w
in directly i
nction that ca
So in other
t block nega
k only positi
If at all, if i
this modific
ocess? I will
me thing P
1
o
time later. N
. J unction J
d block the
is very smal
ther words, a
minus layer o

als and it is d
etween the a
we blocked b
in contact wi
an block the
words, this
ative voltage
ive voltage?
it can block
cation is tha
tell you whi
or P plus hig
Now, you jus
1,
N layer li
voltage bec
ll similar to
a highly dop
or the N
1
lay
directly in co
anode and J
1
by J
1
becaus
ith anode an
negative vo
structure ca
e. So, this GT
It is becau
k is a very
at it speeds u
ile doing the
ghly doped N
st see
ightly
cause
SCR
ped N
yer.
ontact
when
se we
nd N
1,

oltage
annot
TO is
use of
small
up the
e turn
N plus
13

(Refer Sl

Now, com
gate. In S
conductio
gate elec
happens
very near
the instan
during tu

Since the
compared
very near
have a ve















lide Time: 3
ming to the
SCR, why di
on is very sm
ctrode is ava
in the GTO
r to the gate
nt of turn on
urn on.
e dr by dt i
d to SCR. T
r to the gate
ery high dr b
1:24)
inter digitiza
id we limit d
mall when y
ailable and a
O because of
e. So in othe
n, a large ar
is very larg
This is becau
e, large area
by dt, I can o
ation, I told
dr by dt durin
you turn on t
afterwards th
f this inter d
r words, a la
rea is availab
e, GTO can
use of inter
is available
or turn on tim

you, the rem
ng turn on?
the device. I
he conductio
digitization?
arge area is
ble. So there
n be brough
digitization.
e, so you can
me of the GT
mote part of
It is because
It is a area o
on spreads to
Even the re
available du
efore, you ca
ht into condu
. Even the r
n have a ver
TO reduces.

f a cathode is
e the area th
of the cathod
o the other p
emote part o
uring the tur
an have a ve
uction at a
remote part
ry high dr b
s very near t
at is availab
de adjacent t
parts. Now,
of the catho
rn on period
ery high dr
much faster
of the catho
by dt. So, if
to the
le for
to the
what
ode is
d or at
by dt
r rate
ode is
I can
14

(Refer Sl

See, in a
gates, the
conductio

(Refer Sl

Now, co
differenc
the sense
latching
conductio
lide Time: 33
3D it looks
e cathode, th
on very rapi
lide Time: 33
oming to the
ce between th
e, in princip
current. But
on period. W
3:10)
something l
he direction
dly that is be
3:43)
e turn on ch
he SCR char
le, gate sign
t it is recom
Why? It is b
like this, I h
of holes, th
ecause of a v
haracteristic
racteristics a
nal can be w
mmended tha
because of th

have chosen
e direction o
very high dr

cs, they are
and the GTO
withdrawn on
at a positive
his reason, I
a anode sho
of electric. S
by dt is pos
similar to
O characterist
nce the anod
e I
G
is maint
told you on

ort structure.
So, GTO can
ssible.

an SCR. Th
tics. It is a la
de current i
tained throu
ne of the lim
So, these ar
n be brough
here is no m
atching devi
s higher tha
ughout durin
itations or o
re the
ht into
much
ce, in
an the
ng the
one of
15

the diffe
compared

Now, as
anode cu
the curre
small. So
may get d
maintain
current.

So, what
on time c
looks som

(Refer Sl

A high
known a
after som
peak valu









rence betwe
d to a SCR.
sume that am
urrent had di
ent, anode cu
o therefore, t
damaged. So
ed througho
t is being don
can be reduc
mething like
lide Time: 36
gate current
s the delay t
metime you c
ue.
een the GTO
Holding cur
m doing som
ipped mome
urrent increa
there could
o therefore, i
out. But then
ne is a high
ced and after
this.
6:18)
t, so anode
time. The vo
can reduce th
O and SCR
rrent of a GT
me disturban
ntarily, som
ases very rap
be some hot
it is recomm
n, you do no
pulse of gat
r sometime y
current has
oltage across
he gate curre
is that hold
TO is higher
nce, anode cu
me of parts of
pidly, the are
t spots and b
mended that d
ot need to m
te current is
you can redu

s attained a
s the device
ent to I
GT.
So
ding current
compared to
urrent has di
f the GTO m
ea that is ava
because of th
during condu
maintain the
provided du
uce this gate
study value
e also reduce
o, this value
t for a GTO
o SCR.
ipped mome
might turn o
ailable for co
his localized
uction perio
same magn
uring turn on
e current. Se

e after some
ed to its satu
is approxim
O is much h
entarily. Sinc
ff and now
onduction is
d heating, a
d, a positive
nitude of the
n, so that the
ee the wave f
e time t
d
wh
uration value
mately 10% o
higher
ce the
again
s very
GTO
e I
G
is
e gate
e turn
form,
hat is
e. So,
of this
16

(Refer Sl

So, that i
case of a
voltage d
saturation
bring tha
transistor

Now, dev
saturation
Now, let
flowing o

See, this
current is
plus alph
them for
value. So
plus alph










lide Time: 37
is about the
a thyristor w
drops to a ve
n. Now, you
at T
2
out of s
rs, both are i
vice has to b
n. How do I
us see what
out of the ga
expression
s given by a
ha
2.
Wherein
the SCR. W
o, in on state
ha
2.
7:09)
turn on of t
when the thy
ery low valu
u want to tur
saturation. S
in saturation
be turned of
I bring this
t is the relat
ate terminal.
that we hav
alpha
2
into I
G
n, alpha
1
and
When SCR i
e, I can negl
the GTO. No
yristor is on
ue, could be
rn off the GT
See in this fi
n.
ff. How do I
transistor o
tionship betw
ve derived f
G
plus I
CBO
i
alpha
2
are c
is in on state
ect this term

ow, coming
n, both T
1
an
e of the orde
TO, so first
figure, this is
I turn it off?
ut of satura
ween the ano
for the SCR
is a sum of
ommon base
e, we have r
m, I
A
can be
to the turn
ndT
2
are in
er of 1.5 vol
thing that h
s T
1,
PNP tra
? You have t
ation? I have
ode current
R is still val
I
CO1
and I
CO
e current gai
reduced the
given by I
CB

off of a GTO
n saturation.
lts or so. So
has to be don
ansistors an
to bring this
e to reduce
and the gate
lid here. The
O2
divided b
ins. We hav
gate curren
BO
divided b
O, so even i
That is wh
o, T
1
andT
2
a
ne is you ha
d this is T
2,
s transistor o
the base cu
e current tha
e total satur
y 1 minus a
ve already de
nt to a very
by 1 minus a
in the
hy the
are in
ave to
NPN
out of
urrent.
at has
ration
alpha
1
efined
small
alpha
1

17

(Refer Sl

See here,
when the
equal to
divided b
and the g
minus 1.

How do I
should be
for this tr
the thick
between
compared
alpha
2.

Now, how
I
G
is flow
gate term










lide Time: 39
, this is the c
e numerator
minus of al
by alpha
2.
So
gate, it come

I improve th
e as high as
ransistor, thi
kness of P
2
l
a SCR and
d to a SCR a
w to turn off
wing out of t
minal, so hole
9:50)
current that
r becomes 0
lpha
2
into I
G
o, if I want to
es like this,
his gain? In o
possible. W
is is N
1
P
2
N
layer less. P
d a GTO, I t
and second
f a GTO? W
the gate, I
G
i
es are extrac
has to be tur
. So, when
G,
see here.
o find out th
I
A
divided b
other words,
What is alpha
2
N
2.
How do I
P
2
layer shou
told you the
is increase i
What happens
is connected
cted from P
2.

rned off. See
can you ma
So, the rela
he gain or th
by I
G
is equa
how do I m
2
? It is a gai
make alpha
2
uld be very
e first differ
in doping lev
s exactly dur
d to P
2.
See h

e, in the prev
ake this num
ationship is I
he relationsh
al to alpha
2
d
make this gain
in of N
1
P
2
N
2
as high as p
thin. See, t
rence that I
vel in N
2,
the
ring the turn
here, I
G
is P
2

vious equati
merator zero
I
G
is equal
hip between t
divided by a
n as high as
N
2
transistor
possible? On
that is one
told you, la
ereby increa
off process?
2,
now I
G
is f
ion, I
A
becom
o? When, I
C
to minus of
the anode cu
alpha
1
plus a
possible? A
. See here, a
ne way is to
of the differ
ayer of P
2
is
asing the val
? I
G
has reve
flowing out o
mes 0
CBO
is
f I
CBO

urrent
alpha
2
Alpha
2

alpha
2
make
rence
s less
lue of
ersed,
of the
18

(Refer Sl

So, as th
holes or h
is applie
junction
the holes
reverse b
Conducti
away fro

Now, it m
there wou
that show
















lide Time: 42
ese extractio
holes from t
d in P
2
base
and both go
s extraction
biased but t
ion area drop
m the gate.
may so happ
uld be a loc
wing the turn
2:50)
ons take plac
he anode are
e region and
oes into cut o
continues,
then I
G
is s
ps. Now, the
pen that the
alize heating
n off process
ce, the volta
e extracted f
d eventually
off. But then
P
2
is furthe
still flowing
e current ma
current den
g and device
s, it is someth

age drop is d
from the P ba
this voltage
n, entire turn
r depleted.
out. So, P
ay be flowin
nsity in those
e may fail. S
hing like thi
developed in
ase. So, duri
e, reverse b
n off process
See, first is
2
gets furthe
ng in the rem
e parts may
So, this has t
s.

n the P
2
regio
ing this proc
biases your g
s is not com
s gate catho
er depleted.
mote parts of
increase an
to be avoide
on. I will tel
cess, voltage
gate and cat
mpleted as ye
ode junction
. What happ
f the anode o
nd if this hap
d. See, the f
ll you
e drop
thode
et. As
n gets
pens?
or far
ppens
figure
19

(Refer Sl

All the h
to flow t
that is av
eventuall

(Refer Sl

Now, the
gain of a
generally
lide Time: 45
holes are div
through the
vailable, it m
ly device ma
lide Time: 45
e turn off of
a GTO is ve
y.
5:02)
erted toward
area which
may form or
ay fail.
5:39)
f a GTO is g
ery low. Tur
ds the gate. T
is far away
r in that area
greatly influe
rn off gain

The P
2
gets f
from the ga
a, the curren

enced by the
is very low
further deple
ate area. The
nt density m
e turn off cir
w, could be o

eted, now an
ere is a redu
may increase

rcuit. Unfor
of the order
node current
uction in the
localize hea
rtunately, tur
r of say, 6 t
t tries
e area
ating,
rn off
to 15,
20

So theref
voltage d
So, gate
short dur
current re

(Refer Sl

At steady
Somewh
still rema
anode cu

Now, wh
There ha
high. So,
in series
very sma
RC circu

Now, the
known a
wanted to
onwards,

Now, bec
current, a
of this th
of the cir

fore, if anod
device. So, i
current that
ration. So, a
emains cons
lide Time: 47
y state, gate
ere at this po
ains constan
urrent remain
hat happens
as to be a snu
, you can use
with thyrist
all inductor.
uit looks like
ere is a diod
s loop induc
o turn off th
, anode curre
cause of this
anode curren
here is going
rcuit.
de current is
if anode curr
is flowing o
as the gate c
tant. So, this
7:10)
e current has
oint, it desire
nt for t
s
dur
ns approxima
after t
s
? Th
ubber circuit
e a very sma
or to limit d
So, the ratin
this, someth
de, it has its
ctance, in do
e thyristor, s
ent falls at a
s loop induc
nt cannot sta
to be a volt
s 100 amper
rent is aroun
out of the te
current starts
s period is kn
s been, we h
e to turn off
ation. So, th
ately constan
his process h
t to turn off
all inductor in
di by dt durin
ng of di by d
hing like this
s own turn o
otted lines.
so I
G
has rev
very fast rat
ctance and b
arts flowing t
tage spike be
res, by the w
nd 100 ampe
erminal is 10
s flowing ou
nown as the

have to redu
f the GTO. S
his is known
nt and this p
has to be stu
f a GTO. I to
n series with
ng turn off.
dt, even now
s.
on time and
There is a v
versed, for so
te.
because of th
through the
ecause of the
way GTO is
eres, gain is
0 amperes an
ut of the ter
storage time
uce the gate
So, I
G
reverse
n as storage
period t
s
can
udied by tak
old you, di b
h a GTO. W
Similarly, to
w there ha
d I have sho
very small i
ome time I
A
his diode, tu
snubber circ
e inductance
s a high curr
of the orde
nd it is fortu
rminal, for s
e. See in this

current to a
es, though I
G
e time. Duri
last for a few
king a snubb
by dt rating o
e have conn
o limit di by
as to be a tu
own a small
inductor in d
remains con
urn on time o
cuit immedia
e which is th
rent device,
er of say, 6 t
unately for a
some time a
s figure.
a very low v
G
has reverse
ing storage
w microseco
ber into acc
of a GTO is
nected an ind
y dt, we requ
urn off snubb
inductor wh
dotted lines.
nstant and fr
of the diode
ately and bec
here in other
high
to 15.
a very
anode
value.
ed, I
A

time,
onds.
count.
s very
ductor
uire a
ber, a
hat is
You
rom t
s

e, this
cause
parts
21

If this in
finds a p
therefore
dangerou

So theref
that I hav
critical in
is known
as the tai

Now, the
Now, wh
zero and
free char
is nothin
require a

See, the
increases
increases
of the GT
See, volt
current, v
place dev
turn off l
the tail cu

(Refer Sl

ductance 0 a
ath, the capa
e because of
us, in the sen
fore, the snu
ve shown in
n the case of
n as the fall t
il current, sta
e voltage ac
hat is this tai
the gate cur
rges, they ex
ng but the b
finite time t
problem he
s. As the thic
s. So in other
TO. So, wh
tage across
voltage is a
vice are high
losses? So, o
urrent durati
lide Time: 54
and turn on
acitor. Now,
f this a larg
nse that devic
ubber circuit
the dotted li
f GTO. So, t
time and thi
arts flowing
ross the GT
il current? T
rrent is same
xist in N
1
lay
blocking lay
to recombine
re is as the
ckness of N
r words, the
hat is the con
the device
reasonably h
h. So, turn o
one way to re
ion? This dt
4:47)
time is very
because of
ge di by dt
ce may fail b
t layout is v
ine should b
the anode cu
is is very sm
through this
TO is limited
This tail curr
e as the anod
yer. The curr
yer, lightly d
e.
voltage rati
1
layer incre
tail current
nsequence of
started incr
high value it
ff losses in a
educe is to r
has to be red
y small, then
this inducto
t, this spike
because of th
very importa
be as small a
urrent has fa
mall and from
s snubber cir
d by the dv
ent, that per
de current. So
rent due to th
doped layer.
ing increase
ases, time ta
period incre
f having a h
easing, curr
t has attaine
a GTO, they
reduce the fa
duced.
n may be, im
or and diode,
e appears ac
his spike.
ant. The loop
as possible. S
allen to a ver
m there onwa
rcuit.
by dt, it is
riod I
k
is equ
o, this tail cu
he free charg
. These carr
s N
1
layer, t
aken for the
eases with th
higher fall tim
rent in the d
ed, so therefo
y are signific
all or tail cur
mmediately th
, this current
cross the G
p inductance
Snubber circ
ry low value
ards a curren
determined
ual to zero, c
urrent is corr
ges which ex
riers are num
the thicknes
se carriers t
he blocking v
me or sorry,
device is sti
ore, the loss
cant. So, how
rrent duration

his anode cu
t gets choked
GTO. It coul
e, the induc
cuit layout is
e. So, the end
nt what is kn
by the dv b
cathode curr
responding t
xists in N
1
w
merous and
ss of the N
1
o recombine
voltage capa
higher tail t
ill finite, th
es that are ta
w do I reduc
n. How to re
urrent
d and
ld be
ctance
s very
d of t
f

nown
by dt.
ent is
to the
which
d they
layer
e also
ability
time?
e tail
aking
ce the
educe
22

Having d
current d
said one
it does is

(Refer Sl

Those an
doped. W
recombin

So this h
quickly.
reduces b
Negative

Thank yo

decided on t
depends on th
of the advan
, see this.
lide Time: 55
node shortin
What they do
ne more quic
highly doped
So therefore
but then dev
e voltage it c
ou.

the voltage r
he thickness
ntages of ano
5:14)
ng N layers a
o is this heav
ckly.
d N cells, th
e, your fall o
vices no lon
annot block
rating, N
1
la
of N
1.
Is the
ode shorting
are highly d
vily doped N
hey helped t
or sorry, tail
nger symme
. So, with th
ayer, thickne
ere a way ou
is to reduce

doped. They
N cells, they m
he minority
l current tim
trical. Now,
his I will con
ess of N
1
lay
ut? Yes. Why
e the turn off
y were all w
make the mi
carriers tra
me reduces. S
, it can bloc
nclude my to
yer gets dec
y did we do
f time. How

where N plus
inority carrie
apped in N
1,

Sorry, it is a
ck only the
days lecture
cided and th
anode shorti
does it do?
s, they are h
ers trapped i
recombine
a tail current
positive vol
e.
he tail
ing? I
What
highly
in N
1,
more
t time
ltage.