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Revision on
Transistor Devices
Contents
• BJT and FET
• Characteristics
• Operations
1
What is a transistor?
Three-terminal device
i
whose voltage-current
relationship is controlled by +
ic
a third voltage or current
v
+
vc –
We may regard a transistor as a
–
controlled voltage or current
source.
IE = IB + IC
Prof. C.K. Tse: Revision on Transistor devices
6
Typical operations
1. Cut-off
2. Active operation
+10 V
3. Saturation
RL IC
Determining factors:
IB
• How large is IB or VBE
• How large is RL +
VBE
–
0A
VBE = 0
IC = βI B
+10 V
the BJT is said to be in active
operation. RL IC
This is the case of current IB
amplification.
+
But we need ICRL < 10V VBE
–
– – –
–
IC = βI B
Large RL Large IB
+10 V +10 V
IB=10µA + IB=100µA +
VCE = 0V VCE = 0V
just saturate! just saturate!
– –
Saturation 10V
(10 − 0.7) V
IB = = 9.3mA
1kΩ Situation 1
10V 0.1A
100Ω
IC = 100x9.3 = 0.93A which is lamp
too large and surely saturates
C
the BJT!!! So, IC ≈ 0.1A. 1kΩ B
Light bulb turns on.
Situation 2 E
Cut-off
IB = IC = 0. Light bulb turns off.
VCE
Transconductance: IC IC1 –1 IC
slope = gm = Ω saturation
∆IC
0.025
VBE =0.68 V
gm = active VBE =0.65 V
∆VBE IC1
VBE =0.60 V
∆IC
gm =
∆VBE A simple differentiation gives
dIC d ⎛ ⎞
gm = = ⎜ βI ss (e V BE / VT
− 1)⎟
dVBE dVBE ⎝ ⎠
V BE / VT 1
= βI ss (e )
VT
IC IC
≈ or at room temp
VT 25mV
IC
+10 V
–
VCE
0.2V
IC
IC
slope ≈ IC / VA
for one particular
choice of IB or VBE
Early voltage
typically 100V
VCE
0.2V
Source
SiO2 insulator
VDS ID
Gate
–
+
VGS
– Source
VGS
Vth
VDS
VGS–Vth
Prof. C.K. Tse: Revision on Transistor devices
28
Example (biasing in saturation)
10V Vth = 3V By using load line
K = 0.5 mAV–2
2kΩ
ID load line
ID slope = –1/2k
5V
ID = 0.5x22
= 2mA
VDS = 10 – 2x2
= 6V
which is > 2
OKAY!
Gate p p Gate p p
n n
–ve voltage more
applied to
reduce –ve voltage
current Channel
becomes
Source narrower Source
Gate p p Channel
n
more pinch off;
–ve voltage Current stops
Pinch-off
VG voltage
Vp S Source Vp
surely depletion type
–
Of course, you
Vp = –2 V
may also solve VDS
K = 0.2mA/V2 it by using 0–(–2)=2V 10V
load line.
ID = 0.7195mA
VDS = 1.366V
Prof. C.K. Tse: Revision on Transistor devices
40
Important small-signal characteristic
Similar to BJT!!! Consider only the saturation region.
ID
If we change VGS in a small range, then
VGS=2V ID also changes in a range. The ratio of
the change in ID to the change in VGS is
called transconductance.
VGS=1.9V
∆ID
gm =
∆VGS
VGS=1.8V
which is the slope of the curve
VGS=1.7V ID versus VGS , or analytically,
VDS
dID d
gm = = K (VGS − Vth ) 2
dVGS dVGS
= 2K (VGS − Vth )
= 2 K K (VGS − Vth )
= 2 K ID
Prof. C.K. Tse: Revision on Transistor devices
41
Other FETs
So far, we have only talked about
1. n-channel MOSFET (enhancement type)
similar to npn BJT
2. n-channel JFET (depletion type)