2SJ550(L),2SJ550(S)

Silicon P Channel MOS FET

High Speed Power Switching
ADE-208-633A (Z)
2nd. Edition
Jun 1998
Features
Low on-resistance
R
DS(on)
= 0.075 typ.
Low drive current.
4V gate drive devices.
High speed switching.
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S
2SJ550(L),2SJ550(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
Note1
60 A
Body-drain diode reverse drain current I
DR
15 A
Avalanche current I
AP
Note3
15 A
Avalanche energy E
AR
Note3
19 mJ
Channel dissipation Pch
Note2
50 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25C
3. Value at Tch = 25C, Rg 50
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60 V I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20 V I
G
= 100A, V
DS
= 0
Zero gate voltege drain current I
DSS
10 A V
DS
= 60 V, V
GS
= 0
Gate to source leak current I
GSS
10 A V
GS
= 16V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 2.0 V I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
0.075 0.095 I
D
= 8A, V
GS
= 10V
Note4
resistance R
DS(on)
0.105 0.155 I
D
= 8A, V
GS
= 4V
Note4
Forward transfer admittance |y
fs
| 6.5 11 S I
D
= 8A, V
DS
= 10V
Note4
Input capacitance Ciss 850 pF V
DS
= 10V
Output capacitance Coss 420 pF V
GS
= 0
Reverse transfer capacitance Crss 110 pF f = 1MHz
Turn-on delay time t
d(on)
12 ns V
GS
= 10V, I
D
= 8A
Rise time t
r
75 ns R
L
= 3.75
Turn-off delay time t
d(off)
125 ns
Fall time t
f
75 ns
Bodydrain diode forward voltage V
DF
1.1 V I
F
= 15A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
70 ns I
F
= 15A, V
GS
= 0
diF/ dt =50A/s
Note: 4. Pulse test
2SJ550(L),2SJ550(S)
3
Main Characteristics
0.1 0.3 1 3 10 30 100
20
16
12
8
4
0
10 V
2 4 6 8 10
6 V
20
16
12
8
4
0
Tc = 75C
25C
25C
1 2 3 4 5
V = 10 V
DS
80
60
40
20
0
50 100 150 200
1000
300
100
30
10
3
1
0.3
0.1
Ta = 25 C
1

m
s
10 s
1
0
0

s
P
W

=

1
0

m
s

(
1
s
h
o
t
)
D
C

O
p
e
r
a
t
i
o
n

(
T
c

=

2
5

C
)
3.5 V
V = 2.5 V
GS
4 V
3 V
C
h
a
n
n
e
l

D
i
s
s
i
p
a
t
i
o
n




P
c
h


(
W
)
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
D
r
a
i
n

C
u
r
r
e
n
t




I






(
A
)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
D
r
a
i
n

C
u
r
r
e
n
t




I






(
A
)
D
Typical Output Characteristics
Gate to Source Voltage V (V) GS
D
r
a
i
n

C
u
r
r
e
n
t




I








(
A
)
D
Typical Transfer Characteristics
Pulse Test
Operation in
this area is
limited by R
DS(on)
2SJ550(L),2SJ550(S)
4
4.0
3.2
2.4
1.6
0.8
0 4 8 12 16 20
I = 15 A
D
10 A
5 A
0.1 1 10 100 0.3 3 30
10
1
0.01
0.40
0.32
0.24
0.16
0.08
40 0 40 80 120 160
0
0.1
0.03
0.3
3
V = 4 V
GS
10 V
5, 10, 15 A
V = 4 V
GS
10 V
I = 15 A
D
10 A 5 A
0.1 1 10 100 0.3 3 30
100
10
0.1
1
0.3
3
30
25 C
Tc = 25 C
75 C
V = 10 V
DS
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V













(
V
)
D
S
(
o
n
)
D
r
a
i
n

t
o

S
o
u
r
c
e

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e
Drain Current I (A)
D
D
r
a
i
n

t
o

S
o
u
r
c
e

O
n

S
t
a
t
e

R
e
s
i
s
t
a
n
c
e
R















(




)

D
S
(
o
n
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R













(



)
D
S
(
o
n
)
S
t
a
t
i
c

D
r
a
i
n

t
o

S
o
u
r
c
e

o
n

S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

Static Drain to Source on State Resistance

vs. Temperature
Drain Current I (A)
D
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


|
y




|

(
S
)
f
s
Forward Transfer Admittance vs.
Drain Current
2SJ550(L),2SJ550(S)
5
0 10 20 30 40 50
10000
1000
3000
300
10
30
100
0
20
40
60
80
0
0
4
8
12
16
8 16 24 32 40
20
1000
200
500
100
20
10
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
100
V = 10 V
25 V
50 V
DD
I = 15 A
D
V
GS
V
DS
V = 50 V
25 V
10 V
DD
0.1 0.2 1 2 10 20 5 0.5
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS DD
t
f
r
t
d(on)
t
d(off)
t
C
a
p
a
c
i
t
a
n
c
e



C


(
p
F
)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e




V








(
V
)
D
S
G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e




V








(
V
)
G
S
Dynamic Input Characteristics
Drain Current I (A)
D
S
w
i
t
c
h
i
n
g

T
i
m
e



t


(
n
s
)
Switching Characteristics
500
200
100
20
50
10
5
0.1 0.3 3 1 10
di / dt = 50 A / s
V = 0, Ta = 25 C
GS
20
Reverse Drain Current I (A)
DR
R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e



t
r
r


(
n
s
)
BodyDrain Diode Reverse
Recovery Time
2SJ550(L),2SJ550(S)
6
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = L I
2
1
V
V V
AR
AP
DSS
DSS DD
2
20
16
12
8
4
25 50 75 100 125 150
0
I = 15 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD

20
16
12
8
4
0
0.4 0.8 1.2 1.6 2.0
V = 0, 5 V
GS
10 V
5 V
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit Avalanche Waveform
R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t



I








(
A
)
D
R
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (C) Source to Drain Voltage V (V)
SD
R
e
p
e
t
i
t
i
v
e

A
v
a
l
a
n
c
h
e

E
n
e
r
g
y



E







(
m
J
)
A
R
2SJ550(L),2SJ550(S)
7
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
3
1
0.3
0.1
0.03
0.01
10 100 1 m 10 m 100 m 1 10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 2.5 C/W, Tc = 25 C

Tc = 25C
D = 1
0.5
0.2
0.1
0.05
0
.
0
2
0
.
0
1
1
s
h
o
t

p
u
l
s
e
Switching Time Test Circuit Waveform
Pulse Width PW (S)
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
s



(
t
)

Normalized Transient Thermal Impedance vs. Pulse Width

2SJ550(L),2SJ550(S)
8
Package Dimensions
Unit: mm
10.2 0.3
(
1
.
4
)
8
.
6

0
.
3
1.27 0.2 1.2 0.2
2.54 0.5
1
1
.
3

0
.
5
(
1
.
5
)
0.86
+0.2
0.1
3
.
0
+
0
.
3

0
.
5
0.76 0.1
1
0
.
0
+
0
.
3

0
.
5
2.54 0.5
4.44 0.2
1.3 0.2
2.59 0.2
0.4 0.1
1
1
.
0

0
.
5
10.2 0.3
(
1
.
4
)
8
.
6

0
.
3
1.27 0.2
2.54 0.5
(
1
.
5
)
0.86
+0.2
0.1
1
0
.
0
+
0
.
3

0
.
5
2.54 0.5
4.44 0.2
1.3 0.2
2.59 0.2
0.4 0.1
1.2 0.2
(
1
.
5
)
0.1
+0.2
0.1
L type S type
Hitachi Code
EIAJ
JEDEC
LDPAK

Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.