Professional Documents
Culture Documents
N
3
9
0
3
NPN General Purpose Amplifier
2N3903
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Characteristic Max Units
2N3903
PD Total Device Dissipation
Derate above 25C
625
5.0
mW
mW/C
RJC
Thermal Resistance, Junction to Case 83.3 C/W
RJA
Thermal Resistance, Junction to Ambient 200 C/W
C
B
E
TO-92
2001 Fairchild Semiconductor Corporation 2N3903, Rev A
2
N
3
9
0
3
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 A, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 A, I
C
= 0 6.0 V
I
CEX
Collector Cutoff Current V
CE
= 30 V, V
OB
= 3.0 V 50 nA
I
BL
Base Cutoff Current V
CE
= 30 V, V
OB
= 3.0 V 50 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain V
CE
= 1.0 V, I
C
= 0.1 mA
V
CE
= 1.0 V, I
C
= 1.0 mA
VCE = 1.0 V, IC = 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
V
CE
= 1.0 V, I
C
= 100 mA
20
35
50
30
15
150
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
VBE(sat)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65 0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance V
CB
= 5.0 V, f = 100 kHz 4.0 pF
C
ib
Input Capacitance V
EB
= 0.5 V, f = 100 kHz 8.0 pF
hfe
Small-Signal Current Gain I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
2.5
hfe
Small-Signal Current Gain V
CE
= 10 V, I
C
= 1.0 mA 50 200
h
ie
Input Impedance f = 1.0 kHz 1.0 8.0 k
hre
Voltage Feedback Ratio 0.1 5.0 x 10
-4
h
oe
Output Admittance 1.0 40 mhos
NF Noise Figure VCE = 5.0 V, IC = 100 A,
RS = 1.0 k,
B
W
= 10 Hz to 15.7 kHz
6.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
t
d
Delay Time V
CC
= 3.0 V, I
C
= 10 mA, 35 ns
t
r
Rise Time I
B1
= 1.0 mA , V
ob ( off )
= 0.5 V 35 ns
ts
Storage Time V
CC
= 3.0 V, I
C
= 10 mA 175 ns
t
f
Fall Time I
B1
= I
B2
= 1.0 mA 50 ns
2
N
3
9
0
3
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
S
A
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
E
S
A
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
V = 30V
CB
C
B
O
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
C
obo
C
ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
IC
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
F
E
- 40 C
25 C
C
V = 5V
CE
125 C
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
V = 5.0V
CE
I = 100 A, R = 500
C S
I = 1.0 mA
R = 200
C
S
I = 50 A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
I = 100 A
C
I = 1.0 mA
C
S
I = 50 A
C
I = 5.0 mA
C
-
D
E
G
R
E
E
S
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
C
U
R
R
E
N
T
G
A
I
N
(
d
B
)
V = 40V
CE
I = 10 mA
C
h
fe
f
e
Turn-On Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
T
I
M
E
(
n
S
)
I = I =
B1
C
B2
I c
10
40V
15V
2.0V
t @V = 0V
CB d
t @V = 3.0V
CC r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
2
N
3
9
0
3
NPN General Purpose Amplifier
(continued)
2
N
3
9
0
3
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Current Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h
-
C
U
R
R
E
N
T
G
A
I
N
V = 10 V
CE
C
f
e
f = 1.0 kHz
T = 25 C
A
o
Output Admittance
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
V = 10 V
CE
C
o
e
f = 1.0 kHz
T = 25 C
A
o
Input Impedance
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
k
)
V = 10 V
CE
C
i
e
f = 1.0 kHz
T = 25 C
A
o
ACEx
Bottomless
CoolFET
CROSSVOLT
DOME
E
2
CMOS
TM
EnSigna
TM
FACT
FACT Quiet Series
FAST
SyncFET
TinyLogic
UHC
VCX