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PNP
2N6107
2N6111
2N6109 *
NPN
2N6288
hFE = 30150 @ IC
= 3.0 Adc 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc All Devices
CollectorEmitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
= 50 Vdc (Min) 2N6109
= 70 Vdc (Min) 2N6107, 2N6292
High Current Gain Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc 2N6107, 09, 11
TO220AB Compact Package
2N6292*
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
305070 VOLTS
40 WATTS
*MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Symbol
VCEO
VCB
2N6111
2N6288
2N6109
2N6107
2N6292
Unit
30
50
70
Vdc
40
60
80
Vdc
VEB
IC
5.0
Vdc
7.0
10
Adc
IB
PD
3.0
Adc
40
0.32
Watts
W/C
65 to +150
C
TJ, Tstg
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A09
TO220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RJC
3.125
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
40
30
20
10
20
40
60
80
100
120
TC, CASE TEMPERATURE (C)
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2
140
160
Symbol
Min
Max
30
50
70
1.0
1.0
1.0
100
100
100
2.0
2.0
2.0
1.0
30
30
30
2.3
150
150
150
Unit
OFF CHARACTERISTICS
VCEO(sus)
2N6111, 2N6288
2N6109
2N6107, 2N6292
2N6111, 2N6288
2N6109
2N6107, 2N6292
2N6111, 2N6288
2N6109
2N6107, 2N6292
2N6111, 2N6288
2N6109
2N6107, 2N6292
Vdc
ICEO
mAdc
Adc
ICEX
IEBO
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
(IC = 2.5 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 7.0 Adc, VCE = 4.0 Vdc)
hFE
2N6107, 2N6292
2N6109
2N6111, 2N6288
All Devices
VCE(sat)
3.5
Vdc
BaseEmitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
3.0
Vdc
4.0
10
Cob
250
pF
hfe
20
DYNAMIC CHARACTERISTICS
fT
2N6288, 92
2N6107, 09, 11
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
(2) fT = |hfe| ftest.
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3
MHz
2.0
1.0
RC
+11 V
SCOPE
t, TIME (s)
RB
D1
51
-9.0 V
-4 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
TJ = 25C
VCC = 30 V
IC/IB = 10
0.7
0.5
0.3
0.2
tr
0.1
0.07
0.05
td @ VBE(off) 5.0 V
0.03
0.02
0.07 0.1
0.2 0.3
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
3.0
5.0 7.0
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
1.0
0.5
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
15
10
0.5 ms
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.15
1.0
0.1 ms
dc
0.1
ms
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25C (SINGLE PULSE)
2.0 3.0
20 30
50
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 ms
70 100
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4
300
t, TIME (s)
2.0
ts
1.0
0.7
0.5
TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2
200
C, CAPACITANCE (pF)
3.0
tr
0.3
0.2
0.1
0.07
0.05
0.07 0.1
TJ = 25C
Cib
100
70
Cob
50
0.2
1.0
0.3
0.5
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
30
0.5
5.0 7.0
1.0
10
20
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
30
50
TO220AB
CASE 221A09
ISSUE AA
T
B
SEATING
PLANE
F
T
Q
1 2 3
H
K
Z
L
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
Notes
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7
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
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8
2N6107/D