TITLE: MARKS OBJECTIVE: PRELAB : 1 / 1 2 / 1 3 / 2 / 4 EXPERIMENT RESULT: R measured / 2 Table 4-1 / 6 / 8 POST LAB: Fixed Bias / 2 Emmitter Stabilized Bias / 2 Voltage Divider Bias / 3 / 7 CONCLUSION: / 1 INSTRUCTOR COMMENTS: TOTAL / 20 UNIVERSITI TENAGA NASIONAL Dept of Electronics and Communication Engineering College of Engineering EEEB141 Bipolar Junction Transistor (BJT) - DC Biasing The objectives of this laboratory experiment is to describe some properties of BJT and analyze and design basic BJT amplifiers Semester: 2 Academic Year: 2011 / 2012 TIME: STUDENT NAME: STUDENT ID: SECTION:
LEARNING OBJECTIVES By the end of this experiment, you should be able to: Describe some of the properties of bipolar junction transistors. Analyze and design basic transistors amplifier configurations.
MATERIALS Transistors: 2N3904 NPN Resistors: 1 x 240k, 1 x 2.2k, 1 x 430k, 1 x 2k, 1 x 1k, 1 x 39k, 1 x 10k, 1 x 3.9k, 1 x 1.5k. Capacitors: 2 1F
EQUIPMENT DC Power Supply Dual Display Multimeter Function Generator
BACKGROUND The Bipolar Junction Transistor (BJT) has three separately doped regions and contains two pn junctions. It can be modeled as a current controlled current source. The circuit symbol and the pin out of the device can be seen in figure below.
In analyzing a BJT circuit the following simplified equations can be used:
I C I B
The equation assumes the device operating in active region (typical for amplifier applications). The equation shows that the current through the collector of the device is controlled by the current to the base. Hence, the current through the current changed proportionally if the base current is changed.
B C E B E C I B I C I E + - V BE EEEB 141 ELECTRONICS DESIGN LAB, Lab 4 2 PRE-LAB ASSIGNMENTS
1. Write the Kirchoffs voltage law equation for the right (in terms of V CC , R C , , I B and V CE ) and left hand side (in term of V CC , R B , I B and V BE ) of Figure 4-1.
2. Write the Kirchoffs voltage law equation for the right (in terms of V CC , R C , , I B and V CE ) and left hand side (in term of V CC , R B , R E , I B and V BE ) of Figure 4-2.
3. Write the appropriate Kirchoffs voltage (and/or current) law equation using V TH and R TH for Figure 4-3.
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4 3
IN-LAB ACTIVITIES
1. Build the Fixed Bias circuit shown in Figure 4-1 on your protoboard.
Figure 4-1: Fixed Bias Circuit
2. By using the DMM, measure each of the transistor node dc voltages (V C , V B , V E , V BE , and V CE ), and determine/calculate all of the currents (I C , I B , and I E ). Calculate , and then calculate . Show your results to the instructor before proceeding.
3. Repeat steps 1 and 2 for the Emitter Stabilized Bias circuit shown in Figure 4-2.
4. Repeat steps 1 and 2 for the Voltage Divider circuit shown in Figure 4-3.
Figure 4-3: Voltage Divider Bias Circuit
5. Record all your results in Table 4-1.
EEEB 141 ELECTRONICS DESIGN LAB, Lab 4 5 RESULTS
measured calculated Circuit V C (V) V B (V) V E (V) V BE (V) V CE (V) I C (mA) I B ( A) I E (mA) C B I I = C E I I = Fixed Bias
Emitter Stabilized Bias
Voltage Divider Bias
Table 4-1
Fixed Bias Circuit
R B : k
R C : k
Emitter Stabilized Bias Circuit
R B : k
R C : k
R E : k
Voltage Divider Bias Circuit
R B1 : k
R B2 : k
R C : k
R E : k EEEB 141 ELECTRONICS DESIGN LAB, Lab 4 6 POST LAB DISCUSSIONS
1. By using only the and V BE obtained and the measured resistors value, calculate V C , V B , V E , and V CE and compare with in-lab activity results. Calculate the percentage relative error between your measured values and your calculated values. Please show the workings clearly.