Influence of In composition on the post grown annealing

effects on InGaAsN/GaAs SQW

J . Cavalcante, C.A.Z. Bassetto J r, J . B. B. de Oliveira, and A. Tabata,
Universidade Estadual Paulista, Campus Bauru, SP, Brazil

The aim of this work is to discuss the post grown annealing effects on the optical properties of
diluted nitride III-V compound InGaAsN/GaAs. It has been proposed as been a new class of
material for the realization of quantum optical devices working on the 1.3 m fiber optical
window. The samples used in this study were grown by molecular beam epitaxy (MBE) on
GaAs substrate with growth temperature (Tg) of 400 C and 430 C. The thickness in the
samples was 64. The In content varies from 0.26 to 0.40 and Ni was 0.016. The figure 1a
and 1b shows the low temperature photoluminescence (PL) results for the analyzed samples.
The samples had been arranged in two sets: As-grown only and post growth annealed samples
(720 C, 40 minutes). It notices that the reply it varied in consequence of the different In
contents the Tg temperature. Slight variation in red shift on the PL emission energy had been
observed at the annealed samples that grew at low Tg (fig.1a). In other hand, for the sample
with higher In content this red shift became more pronounced (32 meV). Even the sample
with small In content that grew at higher Tg can be observed the annealing effect (~20 meV).
A pronounced red shift on the PL emission energy was observed in samples in both Tg. This
fact can be explained primarily by In interdiffusion from the well to barrier induced by
annealing. The Tg role on the quality of well-barrier interface is strongly linked with the
result observed in the higher Tg sample. When the Tg rate is increased the quality of the well-
barrier interface decrease. This is evident by the increase of the PL peak width. The fig. 1b
shows the enlarge of the In gradient. This fact is associated with the interface degradation on
the samples grown at higher Tg (430 C).

Keywords: photoluminescence, annealing, inter diffusion.
0.88 0.92 0.96 1.00 1.04 1.08 1.12
(a) Tg =400 C
Annealed


0.38 0.34 0.30 0.26
As-grown
P
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i
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Energy (eV)
0.98 1.00 1.02 1.04 1.06 1.08 1.10 1.12 1.14
0.26 0.30


(b)Tg =430 C
As-grown
Annealed
P
L

in
t
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s
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Energy (eV)

Fig. 1. Low temperature PL measurements for Tg 400C and 430C.

Work supported by CNPq, FAPESP, Fundunesp.
jonatas@fc.unesp.br, Unesp/Bauru Av. Eng. L.E.C. Coube, 14-01, 17033-360, Bauru/SP.