TCRT5000(L)

Vishay Telefunken

Reflective Optical Sensor with Transistor Output

Description
The TCRT5000(L) has a compact construction where
the emitting-light source and the detector are arranged
in the same direction to sense the presence of an object by using the reflective IR beam from the object.
The operating wavelength is 950 mm. The detector
consists of a phototransistor.

Applications
D Position sensor for shaft encoder
D Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.

94 9442

D Limit switch for mechanical motions in VCR

D General purpose wherever the space is limited
15116

Features
D Snap-in construction for PCB mounting
D Package height: 7 mm
D Plastic polycarbonate housing construction

which prevents crosstalk

D L = long leads
D Current Transfer Ratio (CTR) of typical 10%

Top view

Order Instruction
Ordering Code
TCRT5000
TCRT5000(L)

Document Number 83760

Rev. A4, 03Jul00

Sensing Distance
12 mm
12 mm

Remarks
Leads (3.5 mm)
Long leads (15 mm)

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TCRT5000(L)
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Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature

Test Conditions

tp 10 mA
Tamb 25C

Symbol
VR
IF
IFSM
PV
Tj

Value
5
60
3
100
100

Unit
V
mA
A
mW
C

Symbol
VCEO
VECO
IC
PV
Tj

Value
70
5
100
100
100

Unit
V
V
mA
mW
C

Symbol
Ptot
Tamb
Tstg
Tsd

Value
200
25 to +85
25 to +100
260

Unit
mW
C
C
C

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature

Test Conditions

Tamb 55C

Sensor
Parameter
Total power dissipation
Operation temperature range
Storage temperature range
Soldering temperature

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Test Conditions
Tamb 25C

2 mm from case, t 10 s

Document Number 83760

Rev. A4, 03Jul00

TCRT5000(L)
Vishay Telefunken
Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance

Test Conditions
IF = 60 mA
VR = 0 V, f = 1 MHz

Symbol
VF
Cj

Min.

Typ.
1.25
50

Max.
1.5

Unit
V
pF

Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, IF = 0, E = 0

Symbol
VCEO
VECO
ICEO

Min.
70
7

Typ.

Max.

10

200

Unit
V
V
nA

Test Conditions
VCE = 5 V, IF = 10 mA,
D = 12 mm
IF = 10 mA, IC = 0.1 mA,
D = 12 mm

Symbol
IC 1,2)

Min.
0.5

Typ.
1

Max.
2.1

Unit
mA

0.4

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current

Sensor
Parameter
Collector current

Collector emitter
VCEsat 1,2)
saturation voltage
1) See test circuit
2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)

IF

IC
VCC
A

Figure 1. Test circuit

Document Number 83760

Rev. A4, 03Jul00

96 12314

94 9226

Flat Mirror
= 22.5 mm
Rem. 2

d = working distance
D = Distance
12 0.2

7.0 0.2
= package height

Figure 2. Test circuit

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Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10.000
VCE=5V
IC Collector Current ( mA )

P tot Total Power Dissipation ( mW )

300

Coupled device
200

Phototransistor
100
IR-diode

0
0

25

50

75

10.0

100.0

10.00
IC Collector Current ( mA )

I F Forward Current ( mA )

1.0

IF Forward Current ( mA )

Figure 6. Collector Current vs. Forward Current

1000.0

100.0

10.0

1.0

0.1
0

VF Forward Voltage ( V )

Figure 4. Forward Current vs. Forward Voltage

IF=50mA
20mA
1.00

10mA
5mA
2mA

0.10

1mA

0.01
0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

1.0

10.0

100.0

VCE Collector Emitter Voltage ( V )

96 11764

Figure 7. Collector Emitter Saturation Voltage vs.

Collector Current

1.2

100.0
VCE=5V
IF=20mA

1.0
0.9
0.8
0.7

CTR Current Transfer Ratio ( % )

CTR rel Relative Current Transfer Ratio

0.010

96 11763

Figure 3. Total Power Dissipation vs.

Ambient Temperature

1.1

0.100

0.001
0.1

100

Tamb Ambient Temperature ( C )

95 11071

1.000

VCE=5V

10.0

0.6
302010 0 10 20 30 40 50 60 70 80 90 100

96 11762

Tamb Ambient Temperature ( C )

Figure 5. Rel. Current Transfer Ratio vs. Ambient Temp.

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1.0

0.1
0.1
96 11765

1.0

10.0

100.0

IF Forward Current ( mA )

Figure 8. Current Transfer Ratio vs. Forward Current

Document Number 83760

Rev. A4, 03Jul00

TCRT5000(L)
Vishay Telefunken

I Crel Relative Collector Current

1.2

0.8
0.6
0.4
0.2
0
0

96 11766

VCE=10V
IC=20mA

1.0

10

12

14

16

d Working Distance ( mm )

Figure 9. Relative Collector vs. Distance

Top view

96 12371

Figure 10. Footprint

Document Number 83760

Rev. A4, 03Jul00

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TCRT5000(L)
Vishay Telefunken
Dimensions of TCRT5000 in mm

96 12073

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Document Number 83760

Rev. A4, 03Jul00

TCRT5000(L)
Vishay Telefunken
Dimensions of TCRT5000L in mm

95 11267

Document Number 83760

Rev. A4, 03Jul00

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TCRT5000(L)
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Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Document Number 83760

Rev. A4, 03Jul00