ON Semiconductor

JFET VHF Amplifier

MPF102

NChannel Depletion

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

DrainSource Voltage

VDS

25

Vdc

DrainGate Voltage

VDG

25

Vdc

GateSource Voltage

VGS

25

Vdc

Gate Current

IG

10

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

350
2.8

mW
mW/C

Junction Temperature Range

TJ

125

Storage Temperature Range

Tstg

65 to +150

1
2

CASE 2911, STYLE 5

TO92 (TO226AA)
1 DRAIN

3
GATE

2 SOURCE

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

V(BR)GSS

25

Vdc

2.0
2.0

nAdc
Adc

OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 10 Adc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)

IGSS

GateSource Cutoff Voltage

(VDS = 15 Vdc, ID = 2.0 nAdc)

VGS(off)

8.0

Vdc

GateSource Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc)

VGS

0.5

7.5

Vdc

IDSS

2.0

20

mAdc

2000
1600

7500

ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)

SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

yfs

Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yis)

800

mhos

Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yos)

200

mhos

Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

7.0

pF

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

3.0

pF

mhos

1. Pulse Test; Pulse Width
630 ms, Duty Cycle
10%.

Semiconductor Components Industries, LLC, 2001

November, 2001 Rev. 2

Publication Order Number:

MPF102/D

MPF102
COMMON SOURCE CHARACTERISTICS

30
20
bis @ IDSS

10
7.0
5.0
3.0

gis @ IDSS

2.0

gis @ 0.25 IDSS

1.0
0.7
0.5
0.3
10

grs , REVERSE TRANSADMITTANCE (mmhos)

brs , REVERSE SUSCEPTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)

bis @ 0.25 IDSS

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

5.0
3.0
2.0

0.25 IDSS

0.3
0.2

0.1
0.07
0.05

500 700 1000

brs @ IDSS

1.0
0.7
0.5

grs @ IDSS, 0.25 IDSS

10

20

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

10

10
7.0
5.0

gfs @ IDSS
gfs @ 0.25 IDSS

3.0
2.0
1.0
0.7
0.5
0.3
0.2
10

30

Figure 2. Reverse Transfer Admittance (yrs)

gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)

Figure 1. Input Admittance (yis)

20

|bfs| @ IDSS

30

50 70 100
200 300
f, FREQUENCY (MHz)

bos @ IDSS and 0.25 IDSS

2.0
1.0
0.5
0.2

gos @ IDSS

0.1

0.05

|bfs| @ 0.25 IDSS

20

5.0

gos @ 0.25 IDSS

0.02
0.01

500 700 1000

10

Figure 3. Forward Transadmittance (yfs)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 4. Output Admittance (yos)

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2

MPF102
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

0
1.0

40

350
100

340

400
300

0.8

60

ID = IDSS

0.6

800

310

50

10

350

340

330

0.4

320

700
800

700

300

60

290

70

280

80

900

0.3

ID = IDSS, 0.25 IDSS

310

900

800

0.2

300

700

600

600

500
600

80

40

500

400

0.7

70

320

20

300

200

0.9

30

200

100
50

330

ID = 0.25 IDSS

0.1

500

290

400
300

280

0.0

200

270

90

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

90

900

150

160

170

180

190

200

210

150

160

Figure 5. S11s
30

20

10

350

340

330

0.6

0.5

60
900

70
80
90
100
110
120

800
700

900
700

600
500

0.4

800
600

500

0.3
100

400

400

0.3

ID = 0.25 IDSS

300

200

0.4

100

0.5

300
ID = IDSS

200

170

180

190

200

210

Figure 6. S12s

40

50

270

100

130

30

20

10

0
350
340
330
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8

320

40

310

50

300

60

290

70

280

80

270

90

270

260

100

260

250

110

250

240

120

240

230

130

230

220

140

220

0.7

320

310

300
290
280

0.6

0.6

140
150

160

170

180

190

200

210

150

Figure 7. S21s

160

170

180

190

Figure 8. S22s
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3

200

210

MPF102
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)

10
7.0
5.0

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)

gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)

20

gig @ IDSS

3.0

grg @ 0.25 IDSS

2.0
1.0
0.7
0.5

big @ IDSS

0.3
0.2

10

20

30

big @ 0.25 IDSS

50 70 100
200 300
f, FREQUENCY (MHz)

0.5
0.3

0.1
0.07
0.05
0.25 IDSS

0.03
0.02
0.01

0.007
0.005

500 700 1000

brg @ IDSS

0.2

gig @ IDSS, 0.25 IDSS

10

10
7.0
5.0

gfg @ IDSS

3.0

gfg @ 0.25 IDSS

2.0
1.0
0.7
0.5
bfg @ IDSS

0.3

brg @ 0.25 IDSS

0.2
0.1

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 10. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)

Figure 9. Input Admittance (yig)

20

1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05

gog @ IDSS

0.03
0.02
0.01

500 700 1000

bog @ IDSS, 0.25 IDSS

gog @ 0.25 IDSS

10

Figure 11. Forward Transfer Admittance (yfg)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 12. Output Admittance (yog)

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4

MPF102
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

350

340

0.7

40

100
100

200

200

0.5

300

300

60
ID = IDSS

0.4

70

400

700

400
500

310

50

300

60

290

70

280

80

600

900

270
260

100

110

250

110

120

240

120

130

230

130

220

140
170

180

190

20

10

350

200

100
600
ID = IDSS
700

300
290
280

0.0

270

500
600
700
800

800

260

ID = 0.25 IDSS

250

0.01

240

0.02

230

900

0.03
220

0.04
150

160

170

180

190

200

210

340

330

Figure 14. S12g

340

330

30

20

10

40

320

0
1.5
1.0
100

100

0.4

320

0.01

140

210

0.5

40

330

0.02

Figure 13. S11g

30

340

310

900

160

350

0.04

90

100

150

800

900

90

40

10

600

800

0.3

320

20

0.03
500

700

80

30

ID = 0.25 IDSS

0.6
50

330

350
300
200

400

320

700

600

800

0.9

ID = IDSS

500
900

310

50

300

60

290

70

280

80

270

90

270

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

50

100
0.3

60

0.2

70
80

ID = 0.25 IDSS

0.1

900

90

900

100

150

160

170

180

190

200

210

ID = IDSS, 0.25 IDSS

0.8

Figure 15. S21g

300

0.7

290
280

0.6

150

160

170

180

190

Figure 16. S22g

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5

310

200

210

MPF102
PACKAGE DIMENSIONS
TO92 (TO226AB)
CASE 2911
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

YLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

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6

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

MPF102

Notes

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7

MPF102

Thermal Clad is a trademark of the Bergquist Company.

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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
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MPF102/D

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