AO4446

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4446 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications. Standard Product AO4446 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4446L is a Green Product ordering option.
AO4446 and AO4446L are electrically identical.

VDS (V) = 30V

ID = 15A (VGS = 10V)
RDS(ON) < 8.5m (VGS = 10V)
RDS(ON) < 14.5m (VGS = 4.5V)

S
S
S
G

D
D
D
D

SOIC-8

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current

TA=70C
B

Avalanche Current B
B

TA=25C
Power Dissipation

20

Junction and Storage Temperature Range

12

IAR

20

EAR

50

mJ

40

2.1

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd.

ID
IDM

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case

Units
V

15

TA=25C

Repetitive avalanche energy L=0.1mH

Maximum
30

RJA
RJC

Typ
33
59
16

Max
40
75
24

Units
C/W
C/W
C/W

AO4446

Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

1
TJ=55C

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

40

VGS=10V, I D=15A
TJ=125C

Static Drain-Source On-Resistance

VGS=4.5V, I D=11A

gFS

Forward Transconductance

VSD

IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

VDS=5V, ID=15A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

Units
V

VDS=24V, VGS=0V

VGS(th)

IS

Max

30

IGSS

RDS(ON)

Typ

100

nA

2.2

6.9

8.5

11

13.5

11.8

14.5

27

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, V DS=15V, I D=15A

m
m
S

0.71

1520
VGS=0V, VDS=15V, f=100kHz

1825

pF

306

pF

214

pF

0.47

0.7

33.7

40

nC

17

20

nC

6.2

nC

Gate Drain Charge

10

nC

Turn-On DelayTime

7.2

ns

VGS=10V, VDS=15V, RL=1.0,

RGEN=3

8.2

ns

22

ns

6.7

ns

Body Diode Reverse Recovery Time

IF=15A, dI/dt=100A/s

24

Body Diode Reverse Recovery Charge

IF=15A, dI/dt=100A/s

19

30

ns
nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
Rev 1: May 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

60

4.5V
5.0V
10V

50

4.0V

20

VDS=5V

40
ID(A)

ID (A)

125C

10

30
20

VGS=3.5V

25C

10
0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

3.5

4.5

VGS(Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance

16
VGS=4.5V

14
RDS(ON) (m)

2.5

12
10
8

VGS=10V

1.8
VGS=10V
ID=15A

1.6
1.4
1.2

VGS=4.5V
ID=11A

6
0

10

15

20

25

30

0.8
0

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

20

1.0E+02
ID=15A
1.0E+01

125C

1.0E+00
125C
IS (A)

RDS(ON) (m)

16

12

1.0E-01
25C
1.0E-02
1.0E-03

1.0E-04

25C
4

1.0E-05
2

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AO4446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2500

10

VDS=15V
ID=15A

2000
Capacitance (pF)

VGS (Volts)

8
6
4

1500
1000
Coss

500

10

15

20

25

30

Ciss

35

Crss
0

Qg (nC)
Figure 7: Gate-Charge Characteristics

80
1ms
10ms

10

100s

1s
10s

TJ(Max)=150C
TA=25C

30

40

20

DC

0.1
0.1

25

60

0.1s

20

TJ(Max)=150C
TA=25C

10s
Power (W)

ID (Amps)

RDS(ON)
limited

10

0
0.001

100

VDS (Volts)

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

ZJA Normalized Transient

Thermal Resistance

15

VDS (Volts)
Figure 8: Capacitance Characteristics

100

10

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
PD
0.01

Ton

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

100

1000