Professional Documents
Culture Documents
Semiconductor Devices
Module 2
Syllabus
Page1
Module 2
PN Junctions:
p-n junction is formed by p-type and n-type semiconductors.
Diode is an electronic device constructed by p-n junction, which conducts one direction
of current flow and do not conduct in other direction.
Different methods for fabrication of p-n junction are:
1. Grown junction: Forming junction by an abrupt change of dopant from n-type to ptype or vice-versa. This type junction is called grown junction.
2. Alloyed junction: Metal contained p or n type dopants alloyed with semiconductor
with other type dopants forms alloyed junction.
3. Diffused junction: Impurities are diffused into semiconductors in a gaseous form.
These junctions are widely used in ICs.
4. Ion implanted junction: A high velocity beam of ion impurities is accelerated towards
the surface of semiconductor forms these type of junction.
There are two types of p-n junctions:
1. Abrupt p-n junction: In this the doping concentration on p-side and n-side remain
constant and uniform. The amount of doping concentration may or may not equal.
This type of junction is also called step-graded junction.
2. Graded p-n junction: In this the doping concentration of one
Question:
side is linearly increase with increase in distance x and vicePart A
versa. This type of junction is also called linearly graded
What is meant by graded p-n
junction.
junction?
Page2
Module 2
Question:
Part B
What is meant by depletion
region of a p-n junction?
How is it formed?
Due to the gradient of carrier concentration in both sides, holes diffuse from p-side to nside and electron diffuse from n-side to p-side.
The diffused carriers recombine and results uncompensated acceptor ions left behind in
the p-side and donor ions left behind n-side as shown in figure b. Then forms
uncompensated negative ions on p-side and positive ions on n-side.
The region of immobile ions between p-type and n-type material is called depletion
region or space charge region.
Due to the presence of ionic charge between p-n junction results a potential difference
between the junction and also develops an electric field.
Page3
Module 2
This electric field causes drift minority carriers across the junction and also reduces the
diffusion of the carrier due to its gradient.
The properties of the depletion layer are:
1. This region is depleted of mobile charges electrons and
Question:
holes.
Part B
2. The p-side of depletion layer is negatively charged and nList the properties of
side is positively charged.
depletion region of a p-n
3. Number ions on p-side are equal to the number of ions on n- junction.
side. Thus the electrical charge of depletion region is neutral.
4. There is a potential difference exists between two edges of depletion layer, because of
the opposite charges of immobile ions.
5. The width of the depletion layer decrease with increase in doping concentration.
6. If doping concentration are equal in p and n sides, the width of the depletion region
are equal on both sides.
7. If one side is lightly doped and other side is heavily doped, the lightly doped side will
have more width and heavily doped side will have less width.
The direction of current flow in p-n junction under equilibrium is shown below.
Under thermal equilibrium the net current across the junction must be zero. Thus the
electron and hole current are zero and hence the net current across the junction is zero.
Page4
Module 2
Page5
Module 2
= =
The potential across the junction is called built-in potential or contact potential or barrier
potential or diffusion potential V0.
It is called built-in potential, because it is built-in the
Question:
semiconductor and not an external one.
Part A
This potential develops due to the physical contact of
Define built-in potential.
semiconductor, so it is called contact potential.
Why it is called diffusion
This potential acts as a barrier for majority carriers, hence named potential?
as barrier potential. This potential is due to the diffusion of
majority carriers, so it is also called as diffusion potential.
The built-in potential across the junction is given by
0 =
---(1)
Question:
Part A
Define Fermi-potentials.
=
+
How it is related to built-in
= ---(2)
where and are called Fermi-potentials on the p-side and n-side respectively.
The Fermi-potentials increase with increase in doping, therefore the built-in potential also
increases with increase in doping.
Equilibrium energy band confirms that an electric field exists in the depletion layer which
is directed from n-side to p-side.
Page6
Module 2
Question:
Part B
Plot the distribution of
potential, electric field and
charge density across the
abrupt p-n junction.
Distribution of carrier, contact potential, electric field and charge density distribution in p-n
junction
Page7
Module 2
= 0
= 0
where A is area of cross section.
Using (1),
0 = 0
---(2)
---(3)
And
0 = 0 + 0
+ 0
= 0 1 +
= 0
0 = 0
---(4)
Similarly
---(5)
Page8
Module 2
Problem:
For Si p-n junction at 300K, Na= 1018 cm-3 on p-side and Nd = 1014 cm-3 on n-side. Find the ratio
of depletion layer.
Solution:
=
=
=
= + = 0 ---(1)
Question:
Part B
Derive the expression for
built-in potential of an abrupt
p-n junction.
= 0 ()
0 ()
=
Using (1)
+ = 0
0 ()
0
=0
0 ()
0 =
0 ()
0 ()
---(2)
By definition
=
Using (2)
1 0 ()
=
0
Page9
Module 2
1
0 ()
0
0 () ---(3)
0
The LHS of (3) is the integration of potential distribution and RHS is integration of hole
distribution.
Apply limit to (3)
0
0
=
0
1
0 ()
0
=
[ (0 )] 00
0 0 =
ln 0 ln 0
0 0 =
ln 0 ln 0
0
=
ln
0
0
0
0 = 0 0
---(4)
We have
=
Department of ECE, VKCET
---(5)
Page10
Module 2
Using (4)
ln
0
0
0
ln
=
0
0 =
---(6)
Calculate the contact potential V0 of a Si abrupt junction with Na = 1017 cm-3 and
Nd = 1015 cm-3 at 300K and 450K. (April 2014)
Solution:
At 300K
= 0.026
0 =
ln
= 0.026 ln
1017 1015
1.5 1010 2
= 0.697
At 450K
450
= 0.026
= 0.039
300
Empirical formulae to find ni(T) are:
For Si:
= . ( )( ) cm-3
For Ge:
= . ( )( ) cm-3
Page11
Module 2
0 =
ln
= 0.039 ln
1017 1015
2
(6.5 1013 )
= 0.393
Problem:
An abrupt p-n junction made up of Si has Na = 1018cm-3 on the p-side and Nd = 1015cm-3 on the nside at 300K.
a) Find position of Fermi-levels on p-side and n-sides
b) Draw the equilibrium energy band diagram and determine the Vo, from the diagram.
c) Compare V0 obtained from energy band diagram with the calculated value using expression
for V0
Solution:
a) Fermi-level on p-side
We have
0 = ( )
0
= ( )
= 0.026 ln
1018
= 0.026 ln
= 0.468
1.5 1010
= ln
Similarly
= 0.026 ln
1015
= 0.026 ln
= 0.289
1.5 1010
= ln
Department of ECE, VKCET
Page12
Module 2
Built-in potential
0 =
0.468 0.289
+
=
+
0 = 0.757
= 0.757
ln
2
1018 1015
0 =
= 0.026 ln
10 2
(1.5 10 )
= 0.757
Page13
Module 2
Electric field:
The electric field distribution of depletion layer can be obtained
by Poissons equation. It states that
()
---(1)
Question:
Part B
Derive the expression for
maximum electric field
across an abrupt p-n junction.
= 0
() + +
=
()
---(1)
= + ---(2)
=0
(0 ) + = 0
=
0
+
0
()
Department of ECE, VKCET
---(4)
Page14
Module 2
= + ---(5)
=
=0
+ =0
0
=
0
+
0
In depletion region, electric field is maximum at x = 0. Apply this condition to (3) and
(6),
From (3)
From (6)
0 + 0 =
0
=
0 0 =
0
=
0
+1
0
Department of ECE, VKCET
---(7)
Question:
Part A
Express electric field as a
function of distance in the
depletion region of an abrupt p-n
junction.
Page15
Module 2
0 1 +
= +
---(8)
=
0
+1
=
0 1
Potential distribution:
Assume potential at p-side or = 0 is zero.
By definition, potential on the p-side of the depletion layer
= 0 1 +
Question:
Part B
Express the potential in a p-n
junction as a function of
distance.
Substituting to (1)
0 1 +
= 0 +
2
2 0
0
+ ---(2)
Page16
Module 2
0 , = 0
0 2
0 = 0 0 +
+
20
0
= 0 0 +
2
20 + 0
= 0
2
= 0
= 0 + 2
=
+
+
= ---(4)
We have
= 0 1
Substituting to (4)
= 0 2
+ ---(5)
= 0 0 0 +
Department of ECE, VKCET
Page17
Module 2
0
= 0 0 + 0 +
2
0
= 0
2
0
2
= 0
0
20
2
=
+
0 = =
Using (6)
0 2
0
0 = 0 0
+
20
2
0
0
= 0 0
+
2
2
0
20 0
= 0
+
2
2
0
0
= 0
+
2
2
0
=
0 + 0
2
=
---(7)
This gives the relation between potential and width of the depletion layer.
Page18
Module 2
0 =
---(1)
0 =
Question:
Part B
Derive expression for depletion
layer width of a p-n junction.
0 ---(2)
Also
0
Substituting to (2)
0 =
=
0
( )
2
0 0 ---(3)
Also
0 = 0
Substituting to (3)
0
0
2
+
=
0 2
2 +
0 =
Then
0 2 =
20 +
---(4)
Page19
Module 2
Problem:
An abrupt Si p-n junction has Na = 1017cm-3 on p-side and Nd = 1015cm-3 on the n-side. The area
of cross section of the diode is 10-4cm-2. The relative permittivity of Si is 11.8. Determine the
followings at 300K:
a) Built-in potential
b) Depletion layer width W0, xn0 and xp0.
c) The maximum electric field.
d) The charge on one side of depletion layer.
e) Plot the electric field and charge density to scale.
Solution:
Given that
Na = 1017cm-3
Nd = 1015cm-3
A = 10-4cm-2
= .
a) Built-in potential
0 =
ln
At 300K
= 0.026
1017 1015
0 = 0.026 ln
= 0.697
(1.5 1010 )2
b) Depletion layer width W0, xn0 and xp0
0 =
20 1
1
+
2 0 1
1
+
Page20
Module 2
10
19
15 +
1
1017
1.01 1015
= 9.588 105
0 = 0
= 9.588 10
0 = 0
1015
10
17
+ 10
15
= 9.493 107
= 9.588 105
1017
= 9.493 105
17
15
10 + 10
0 =
0
9.493
10
=
14.54
10
/
14
8.854 10
11.8
= 0
19
Page21
Module 2
e)
Page22
Module 2
Page23
Module 2
20 1
1
+
2(0 ) 1
1
+
0
0
+
+
0
+
+
All the above equations show that, under forward bias: the depletion width and
maximum electric field decreases and under reverse bias: the depletion width and
maximum electric field increases.
Energy band diagram of p-n junction under forward bias and reverse bias:
To plot energy band diagram of p-n junction under biasing, do the following steps:
Forward bias:
Step 1: Fix energies on p-side same as equilibrium condition.
Step 2: Leave the space for depletion layer (less than space for equilibrium condition).
Step 3: With forward bias, energy barrier reduces by qVF. Therefore plot ECn, EVn and EFn
move up by qVF relative to equilibrium.
Step 4: Complete energy band diagram on n-side and connect conduction band and valance
band.
Reverse bias:
Step 1: Fix energies on p-side same as equilibrium condition.
Step 2: Leave the space for depletion layer (more than space for equilibrium condition).
Step 3: With reverse bias, energy barrier increases by qVR. Therefore plot ECn, EVn and EFn
move down by qVR relative to equilibrium.
Step 4: Complete energy band diagram on n-side and connect conduction band and valance
band.
Question:
Part A
Plot the energy band diagram of
a p-n junction under a) forward
bias b) reverse bias.
Department of ECE, VKCET
Page24
Module 2
Question:
Part A
Explain the different current
components in p-n junctions,
their directions and variation
with biasing.
Page25
Module 2
due to electrons also opposite direction and cancels each other. Then net current is
zero.
Under forward bias, the energy barrier reduces by qVF. Then more holes diffuse from
p-side to n-side and few holes drift from n-side to p-side. So net current due to holes
is not zero and proportional to diffusion of holes. Similarly more electrons from nside diffuse to p-side and few electrons from p-side drift to n-side, then there is a
current and is due to diffusion of electrons. The net current in p-n junction is due to
diffusion of electrons and holes, and it is a function of applied forward biasing
voltage VF and this current is also called forward current.
Under reverse bias, the energy barrier increases by qVR. Then diffusion of holes from
p-side to n-side and electrons from n-side to p-side will decrease. But the drift of
electrons from p-side to n-side and holes from n-side to p-side is there. Then the net
current is due to the drift of the thermally generated minority carriers electrons and
holes. This current is also called reverse saturation current or leakage current. This
current is constant at a given temperature, because it depends only on the minority
carrier concentration. If temperature or applied optical energy increases, the reverse
saturation current increases, because of the increment in intrinsic carrier
concentration.
Page26
Module 2
The direction of particle flow and current flow in p-n junction under equilibrium,
forward bias and reverse bias is shown below:
Page27
Module 2
The current in a p-n junction is the sum of electron current and hole current. These
currents are constant in the depletion region. Then the total current of the diode is
evaluated at any point in the depletion region.
= +
= ( = 0) + ( = 0) ---(1)
The minority carrier distribution in a forward biased p-n junction is shown below:
at = 0.
We have
---(2)
When the bias voltage Va is applied V0 changes to V0 - Va and the hole concentration
0 at the edge xp = 0 become ( = 0) and 0 at the edge xn = 0 become
( = 0).
Then
( =)
(
( )
=
=)
---(3)
= 0 = 0
( )
=
=)
---(4)
Page28
Module 2
= ( )
( = )
( = )
( = ) =
---(5)
= = +
= =
Substituting (5)
=
= ( ) ---(6)
Similarly for excess electron concentration at xp = 0 is given by
= (
) ---(7)
Equations (6) and (7) shows that the injected excess minority carrier concentrations
increase exponentially with increase in forward bias. Its magnitude also depends on
the equilibrium minority carrier concentration.
By continuity equation for holes on the n-side under steady-state,
2
2
2
2
(Continuity equation)
Applying this
( ) =
( )
---(8)
The solution is
---(9)
=
At xn = , =
Department of ECE, VKCET
Page29
Module 2
= +
And
= +
=
Then
=
The solution (9) becomes
---(10)
This shows that the hole distribution in the n-region and it decays exponentially from
its initial value .
Then the hole diffusion current on n-side is
(Since =
, = )
( )
Using (10)
=
= +
---(11)
= ---(12)
= ( = 0) + ( = 0)
By (11) and (12)
= = +
=
=
Department of ECE, VKCET
= +
Page30
Module 2
) +
= ( ) ---(13)
Where
=
=
Then
---(14)
Page31
Module 2
Under forward bias, i.e. Va > 0, the current increases exponentially with increase in
forward bias voltage. Then forward current can approximate as
Where
=
.
Under forward bias the resistance of the diode reduces by increasing applied forward
biasing voltage.
Under reverse bias, i.e. Va < 0, the current remains constant at -IS. The reverse current
can approximate as
Where
.
This reverse saturation current is small in the order of several A for Ge diodes and
few nA for Si diodes.
Page32
Module 2
Under reverse bias the resistance of diode decreases by increasing applied reverse
bias voltage.
Minority and majority carrier distribution in p-n junction:
The remains constant in depletion region, but may vary outside.
The minority carrier current is maximum at the edges of the depletion region and
reduces to zero at the ohmic contacts.
We have the total current in a diode
( ) =
( ) =
The distribution of majority and minority carrier current through the diode is shown
below:
Page33
Module 2
Problem
The following data are given for a Si abrupt p-n junction at 300K. A = 1 cm2 Va = 0.6V
On p-side: Na = 1018 cm-3 n = 50s Dn = 34 cm2/s
On n-side: Nd = 1016 cm-3 p = 10s Dp = 13 cm2/s
Calculate Ip(xn = 0) , In(xp = 0) and total diode current at kT/q = 0.026V.
Solution:
( ) =
=
( = ) =
.
=
=
= = .
= .
= .
. .
= .
( ) =
=
( = ) =
= .
.
=
=
= = .
= .
. .
= .
= = + = = . + . = .
Department of ECE, VKCET
Page34
Module 2
= 0 + ( ) ---(1a)
The minority carrier (electron) on p-side is
= 0 + ( )---(1b)
We have
Question:
Part A
Plot minority carrier distribution
across an abrupt p-n junction
under a) forward bias b) reverse
bias.
=
---(2a)
=
=
---(2b)
And
= ---(3a)
= ---(3b)
Using (1)
= = (
= = (
) ---(4a)
) ---(4b)
Equations (3) shows that excess minority carrier is zero at x and at the edge of
the depletion region it is on n-side and on p-side.
Equations (4) shows that the minority carrier is same as equilibrium minority carrier
concentration at x and is zero at the edges of depletion layer.
The plot of the minority carrier distribution in a reverse bias p-n junction is shown
below:
Page35
Module 2
=
+
Question:
Part A
Give the generalized form of
diode equation. How it is
modified for a short diode?
=
Where coth
Wn
Lp
=L
1
p Wn
, if
Wn
Lp
is small
Real diodes:
The diode current equation may differ from the ideal
Question:
behavior due to:
Part A
1. Generation/recombination in the depletion layer
What is real diode? What are the
2. Voltage drop associated with neutral n and p factors that deviate the
regions
characteristics of a real diode
3. Current due to leakage across the surface of p-n from that of the ideal diode?
junction
4. High-level injection
Current due to generation and recombination in the depletion layer:
Considering the carrier generation in the depletion
Question:
layer, the current due to generation can be expressed as
Part A
=
= ---(1)
Explain
generation
and
recombination currents.
Where is the effective life-time of carriers in the
depletion region.
Under forward bias, recombination of carrier is more and the resulting current is
given by
=
=
) = (
Page36
Module 2
= +
Question:
Part A
Explain the temperature
dependence of reverse
characteristics of Si and Ge
diodes.
= = ( + )
temperature, and IS dominate at higher temperature. Then for Si, reverse current saturate at
high temperature only and for Ge it will happen at room temperature.
The temperature dependence of reverse current of Si and Ge diodes are shown below:
Under forward bias, recombination current is negligible for very low temperature in
Ge diodes. In Si and GaAs diodes, recombination current is large compare to
diffusion current at room temperature. But high biasing voltage dominates diffusion
current over other current. Therefore the shape of I-V characteristics is same as that
of ideal diode.
Taking these two effects, the diode equation can be modified to
= (
Page37
Module 2
= = ---(1)
Question:
The distance xp and xn are the functions of biasing
Part B
voltage and depletion layer itself changes with bias.
What is depletion layer
So the there is a capacitance across the depletion layer capacitance? Derive an
and it varies according to depletion layer width. This expression for it.
capacitance is called depletion capacitance or transition capacitance or junction
capacitance Cj.
By definition it is given by
=
---(2a)
( )
( )
---(2b)
Taking
=
+
---(3)
We have
Then
=
+
( )
=
+
( )
Page38
Module 2
=
+
( )
---(4)
+
=
+
=
---(5)
This shows that the junction capacitance is similar to parallel plate capacitance and it
depends on depletion width W.
Under forward bias, depletion width W decreases, then junction capacitance Cj
increases. Under reverse bias, depletion width increases and junction capacitance
decreases.
Equilibrium depletion layer capacitance
Equilibrium depletion layer capacitance is given by
Question:
Part A
=
Show that =
---(6)
With Va
---(7)
Page39
Module 2
=
=
---(8)
Question:
Part A
Plot of
versesV0 - Va is by
=
+
Department of ECE, VKCET
Page40
Module 2
Problem
A Si abrupt p-n junction at 300K has Na = 1016 cm-3 on p-side and Nd = 1014 cm-3 on nside. Area of cross section is 10-5 cm2. Calculate the junction capacitance at
a) Equilibrium
b) Forward bias of 0.5V
c) Reverse bias of 1V and 10V
Solution
a) Equilibrium
= .
= .
.
. .
+
.
= .
. .
=
= .
.
Page41
Module 2
.
.
= .
c) Reverse bias of 1V
= .
= .
p+-n diode:
Here p-side is heavily doped and n-side is normally doped. Then Na >> Nd.
Then depletion width
=
+
Since
Page42
Module 2
Question:
Electrical breakdown of p-n junction:
Part A
When diode is reverse biased, according to ideal
What is meant by
concept a small reverse saturation current IS will
breakdown in p-n junction?
flow and is independent to applied biasing voltage.
(April 2014)
When reverse bias voltage increases to a particular
Does breakdown damage a p-n
value, the current abruptly increases. This junction? Why?
phenomenon is called breakdown of p-n junction
and the reverse voltage for breakdown is called breakdown voltage Vbr.
Breakdown is an electrical phenomenon, it is reversible and there is no
mechanical damage for the diode.
The I-V characteristics of diode with breakdown is shown below:
Page43
Module 2
Question:
Part B
Explain different
breakdown mechanisms
in p-n junctions. (April
2014)
Zener breakdown:
It is the breakdown occurs in heavily doped p-n
Question:
junction.
Part A
This breakdown is due to tunneling of electrons
What is zener breakdown?
from p-side to n-side.
Consider a heavily doped p-n junction, when it is reverse biased the energy bands
get crossed at relatively crossed. i.e. the filled states on p-side (valance band)
comes opposite to vacant states on n-side (conduction band). This is shown
below:
If the barrier separation between the valance band on p-side and conduction band
on n-side is too narrow, tunneling of electrons from p-side to n-side takes place.
This tunneling of electrons causes a reverse current from n to p.
Page44
Module 2
For tunneling under low reverse bias voltage, the width of the depletion region W
should be as low as possible. This will happen only for heavily doped p and n
regions.
Another reason for tunneling is due to the heavy electric field in depletion region
under reverse bias. This electric field increases the slope of the energy bands and
accelerates holes from n-side to p-side.
Typical electrical field for zener effect is 105 V/cm.
Avalanche breakdown:
It is the breakdown occur in lightly doped p-n
Question:
junctions, where tunneling is negligible.
Part A
This breakdown is due to the ionizing collision of
What is Avalanche breakdown?
carriers in depletion region.
When reverse bias voltage increases, an electron entering in depletion region
gains sufficient kinetic energy. This causes an ionizing collision and generates an
EHP.
Then the original and generated electrons move
Question:
towards n-side and holes to p-side.
Part B
If the W is large and electric field is high, carrier
What is meant by Avalanche
multiplication process continues in a cumulative multiplication? How is
way as shown below:
multiplication factor related to
reverse bias voltage?
Page45
Module 2
= ---(1)
=
=
Question:
Part A
What is meant by critical field?
+
+
Question:
Part B
Derive an expression for
breakdown voltage of p-n
junction.
=
=
---(2)
Using (2)
We know that
Using (3)
---(3)
---(4)
This shows the relationship between breakdown voltage and critical electric field.
Page46
Module 2
Problem:
A Si abrupt p-n junction has Na = 1018cm-3 on the p-side and Nd = 1016 cm-3 on the nside. Determine the breakdown voltage if critical electric field is 3 x 105 V/cm.
Determine the avalanche multiplication factor at reverse voltages of 10, 20, 29, 29.2
and 29.6V. Assume n = 3.
Solution:
+
. .
=
.
= , =
= , =
= , =
= . , =
+
= .
= .
= .
= .
= . , =
.
.
= .
= .
Page47
Module 2
where =
Avalanche breakdown
Breakdown due to
Avalanche
multiplication.
Characteristics near the
breakdown is sharp,
because of Avalanche
multiplication.
Occur in lightly doped
p-n junction
Breakdown voltage
increases with increase
in temperature.
Vbr greater than 8Vg
Applications of diodes:
Diodes:
1. Rectifier Converting AC to DC.
2. Isolation Isolating signals from power supply.
3. Wave shaping.
4. Temperature sensor.
Zener diodes:
1. Voltage regulators
2. Reference voltage source.
Question:
Part A
What are the differences
between Zener breakdown and
Avalanche breakdown?
Question:
Part A
What are the applications of
diode breakdown?
Page48
Module 2
Switching transients:
Diodes can be used for switching applications or processing AC signals. So
analysis of diode under non steady-state conditions is essential.
For analysis of diodes based on switching transient involves two simultaneous
variables space and time.
Time variation of stored charge:
Consider the forward current in p+-n junction leads to change the stored charge
in the excess minority carrier distribution.
---(1)
=
()
, ---(2)
is
---(3)
()
Question:
Part A
What is meant by stored charge
in a p-n junction?
+ ---(4)
Page49
Module 2
During t < 0, diode is forward biased by +V and current through the diode is
=
At t = 0, the diode is reverse biased by V and the initial current must be reverse
and is =
. This current is due to the stored charge and junction voltage, both
Page50
Module 2
zero and is ve. The current flow and voltage drop across the diode is shown
below:
The time required for stored charge becomes zero is called storage delay time tsd.
It is given by
---(1)
= +
---(2)
Page51
Module 2
Question:
Part B
What is storage capacitance or
diffusion capacitance? How it is
related to forward current?
= ---(1)
But the forward current
---(2)
Question:
Part B
Derive the expression for
conductance of diode. How
does it vary with variation in
forward bias?
Then
= ---(3)
=
We have
= ( ) ---(3)
For forward bias
=
Then
---(4)
= ---(5)
= ---(6)
Page52
Module 2
=
Using (2) and (3)
=
=
---(7)
=
And
= .
()
()
+
This gives that the storage capacitance introduces a serious limitation to high
frequency switching circuits.
Small signal equivalent circuit:
The small signal equivalent circuit of diode under
reverse bias is shown below:
Question:
Part B
Where
Cj is junction capacitance,
rR is dynamic reverse resistance, typically it is high value
Rs is resistance of p and n regions, typically it is low value
Department of ECE, VKCET
Page53
Module 2
The small signal equivalent circuit of diode under forward bias is shown below:
Where
Cs is storage capacitance and its value is lesser than Cj, so this capacitance
dominates.
rF is dynamic forward resistance. We have
= ( )
= ---(1)
From (1)
Then
---(2)
Problem:
For a p+-n Si diode at 300K, Nd = 1015 cm-3 on the n-side, cross sectional area is 10-3 cm2
on n-side and minority carrier life time is 0.1s. If the diffusion constant is 16cm2/s,
calculate dynamic forward resistance and storage capacitance at forward-bias of 0.6V.
Assume = 1.
Solution:
We have
and
Page54
Module 2
= (
If forward biased
Given
= /
= .
=
Then
. = .
.
=
=
= .
=
= .
.
.
= .
= . . (.) = .
.
=
=
= .
.
=
=
. = .
Page55
Module 2
Problem:
A Si p-n junction at 300K has Na = 1016cm-3, Nd = 1015cm-3, n = p = 0.1s, A = 10-3cm2.
Determine:
a) Junction capacitance at zero bias Cj0
b) Junction capacitance at Va = -5V
c) Storage capacitance at Va = 0.5V
Assume p = 480 cm2/V-s and n = 1300 cm2/V-s
Solution:
a)
= .
= .
.
. .
+
.
= .
. .
=
=
= .
.
= .
b)
.
=
= . = .
+
.
Page56
Module 2
c)
= ( )
=
+
=
=
, =
, =
= . = . /
= . = . /
. . = .
. . = .
=
=
=
=
= .
.
.
.
.
+
= .
= = . . .
= .
.
=
=
. = .
.
= .
Page57
Module 2
m > s
Rectifying
Ohmic
m < s
Ohmic
Rectifying
Question:
Part B
Draw the energy band diagram
of metal n-type semiconductor
with m > s under
equilibrium and bias.
Page58
Module 2
Due to the high conduction band energy level in n-type semiconductor, electrons move
from semiconductor to metal until the barrier potential maintains by a depletion
region. Then the n-side near the metal will completely
Question:
depleted with charge carriers.
Part A
Under equilibrium, there is a barrier for electron flow
Write the expression for V0 and
from metal to semiconductor and is
for metal n-type
= ---(1)
= ( )---(2)
= + ( )---(3)
= ( ) ---(4)
= ( )
= + ( )
= ---(5)
Using (5) and (2), (1) becomes
= +
= + ( )---(6)
This energy barrier is called Schottky energy barrier and it varies from different metalsemiconductor contact. It is independent of applied biasing voltage.
The barrier for electron movement from semiconductor to metal can change by biasing
voltage. The energy band diagram of forward biased and reverse biased metal n-type
contact are shown below:
Page59
Module 2
Under forward bias, the barrier from semiconductor to metal decreases and current flow
from metal to semiconductor increases. The current is mainly due to the electron flow
from semiconductor to metal.
Under reverse bias, the barrier from semiconductor to metal increases and the injection
of electron flow from semiconductor to metal decreases. But there is a flow of minority
carriers and causes a low current flow.
Depletion width and electric field of metal semiconductor contact junction:
The equilibrium depletion layer width of metal semiconductor junction is similar to
p+-n junction. It is given as
Question:
Part A
Derive the expression for
equilibrium depletion layer
width of Schottky diode.
Problem
A contact between tungsten and n-type Si with Nd = 1015 cm-3 is made at 300K. Calculate
the contact potential, equilibrium depletion layer width and maximum electric field at
equilibrium. Given = 4.5V, electron affinity of n-type Si is 3.84V, NC = 2.8 x 1019
cm-3.
Solution:
Contact potential
= ( )
We have
i.e.
=
+ =
+ =
Page60
Module 2
.
=
= .
= .
=
( )
= . . . = .
. .
= . = .
.
=
=
= . /
.
Depletion layer capacitance of metal semiconductor contact:
It is similar to that of p+-n type diode.
Question:
Part A
Derive the expression for
depletion layer capacitance of
Schottky diode.
Page61
Module 2
, T is
absolute temperature.
Then current due to electron flow from semiconductor to metal is given by
= () ---(2)
Where is Richardson constant with mn*
The current due to electron flow from metal to semiconductor is given by
= ---(3)
Then the net current flow through the junction is
=
= ()
= ( )
=
=
---(4)
Page62
Module 2
The main difference between Si p-n junction diode and Si Schottky diode is: Schottky
diode has high forward current as well as reverse saturation current. This is shown
below:
Question:
Part A
Question:
Part A
What are the advantages of
Schottky diode over abrupt p-n
junction diode?
Page63
Module 2
Problem
Question:
Part B
= .
= .
If there is no space charge region, V0 = 0V.
We have
= ---(1)
= ( )
= ( )
= + ( )
= = . . = . ---(2)
=
= .
= (. + )
Substitute this into (2), = .
. + = .
= . . = .
Using (1)
= . .
= .
Problem
A Schottky barrier diode is formed by depositing tungsten on n-type Si. Determine at 300K,
if Nd = 1015 cm-3, = . and electron affinity = 4.15eV
a) V0 b) W0 c)
Solution:
a)
= ( )
=?
Department of ECE, VKCET
Page64
= . ---(1)
Module 2
=
= .
= .
.
= .
Substitute to (1)
= .
+ . = .
= . . = .
= = . . . = .
= .
b)
. .
=
.
=
=
= . /
Page65
Module 2
Problem
A Schottky diode between tungsten and Si doped with 1015 As atoms /cm3 has a junction
area of 10-3 cm2. R* = 110 A/K2 cm2, = . at 300V.
a) Determine the current through the diode at 300K for forward bias of 0.3V.
b) Consider a p+-n junction diode with equal doping n-side. What is the current at the
same forward bias? Take Dp = 12 cm2/s and p = 1s.
c) What is the forward voltage required for the same forward current as that in part (a)?
Solution:
a)
= . . .
= . = .
b)
For p+-n junction diode
=
=
= .
= .
= .
.
= .
c)
. = .
. =
.
.
.
.
= .
= .
= . = . . = .
(This shows that p+-n junction diode require more biasing voltage than Schottky diode to get
same current)
Department of ECE, VKCET
Page66
Module 2
> .
The energy band diagram of metal p-type semiconductor under isolated, equilibrium,
forward biased and reverse biased conditions are shown below:
Page67
Module 2
Question:
Ohmic contact:
Part A
These are for making contact with semiconductor.
What is ohmic contact?
The energy band diagram of metal n-type
semiconductor ohmic contact under isolated, equilibrium, forward biased and reverse
biased conditions are shown below:
Under isolate condition, Fermi level of metal is greater than semiconductor, because
m < s
At equilibrium, EFs moves closer to EFm and there is no barrier for the movement of
electron from metal to semiconductor or vice versa.
The electrons move from metal to semiconductor and accumulate near the interface.
There is no depletion layer near the junction.
During +ve bias between metal and semiconductor, the potential and electric field
across the semiconductor bend upwards. Then the carriers from both directions cross
the junction.
During ve bias between metal and semiconductor, the potential and electric field
bend downwards and carriers flow in both direction.
Page68