PD - 97726C

AUTOMOTIVE GRADE

AUIRGPS4067D1
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 600V

Features

IC = 160A, TC = 100C

Low VCE (on) Trench IGBT Technology

Low Switching Losses
6s SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *

tSC 6s, TJ(max) = 175C

VCE(on) typ. = 1.70V

n-channel
C

Benefits

E
C
G

High Efficiency in a Wide Range of Applications

Suitable for Applications in the Low to Mid-Rrange
Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI

Super-247
AUIRGPS4067D1

G
Gate

Absolute Maximum Ratings

C
Collector

E
Emitter

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.

Parameter

Max.

Units

600
240

V CES

Collector-to-Emitter Voltage

IC @ TC = 25C

Continuous Collector Current

IC @ TC = 100C
INOMINAL

Continuous Collector Current

Nominal Current

120

ICM

Pulse Collector Current, VGE = 15V

360

ILM

Clamped Inductive Load Current, VGE = 20V

IF NOMINAL

Diode Nominal Current

IFM

Diode Maximum Forward Current

V GE

Continuous Gate-to-Emitter Voltage

20

Transient Gate-to-Emitter Voltage

30

PD @ TC = 25C

Maximum Power Dissipation

750

PD @ TC = 100C

Maximum Power Dissipation

375

TJ

Operating Junction and

TST G

Storage Temperature Range

160

480

120

480
V
W

-55 to +175

Soldering Temperature, for 10 sec.

C
300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter

Min.

Typ.

Max.

0.20

0.44

RJC (Diode)

f
Thermal Resistance Junction-to-Case-(each Diode) f

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

0.24

RJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

40

RJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Units
C/W

*Qualification standards can be found at http://www.irf.com/

www.irf.com
09/27/2012

AUIRGPS4067D1
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES

Collector-to-Emitter BreakdownVoltage

V(BR)CE S/T J

T emperature Coeff. of B reakdown Voltage

Min.
600

Typ. Max. Units

0.27

1.70

2.05

VCE(on)

Collector-to-Emitter Saturation Voltage

2.15

2.20

VGE(th)

Gate Threshold Voltage

4.0

6.5

Conditions
VGE = 0V, IC = 500A

V/C VGE = 0V, IC = 15mA (25C-175C)

IC = 120A, VGE = 15V, TJ = 25C
V

IC = 120A, VGE = 15V, TJ = 150C

VCE = VGE, IC = 5.6mA

IC = 120A, VGE = 15V, TJ = 175C

VGE (th)/T J

Threshold Voltage temp. coefficient

-17

gfe

Forward Transconductance

85

VCE = 50V, IC = 120A

ICES

Collector-to-Emitter Leakage Current

2.3

200

VGE = 0V, VCE = 600V

9.4

mA

1.9

2.2

2.0

100

VFM

Diode Forward Voltage Drop

IGES

Gate-to-Emitter Leakage Current

mV/C VCE = VGE, IC = 20mA (25C - 175C)

V
nA

VGE = 0V, VCE = 600V, TJ = 175C

IF = 120A
IF = 120A, T J = 175C
VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Qg

Total Gate Charge (turn-on)

Min.

Typ. Max. Units

240

360

Conditions
IC = 120A

Q ge

Gate-to-Emitter Charge (turn-on)

69

104

Q gc

Gate-to-Collector Charge (turn-on)

90

135

Eon

Turn-On Switching Loss

8.2

10

Eoff

Turn-Off Switching Loss

2.9

3.2

Etotal

Total Switching Loss

11.1

13.2

td(on)

Turn-On delay time

69

82

tr

Rise time

65

82

td(off)

Turn-Off delay time

198

230

tf

Fall time

38

48

Eon

Turn-On Switching Loss

10

Eoff

Turn-Off Switching Loss

3.8

Etotal

Total Switching Loss

13.8

E nergy los s es include tail & diode revers e recovery

td(on)

Turn-On delay time

63

IC = 120A, VCC = 400V, VGE = 15V

nC

VGE = 15V
VCC = 400V
IC = 120A, VCC = 400V, VGE = 15V

mJ

RG = 4.7, L = 87H, TJ = 25C

E nergy los s es include tail & diode revers e recovery

IC = 120A, VCC = 400V, VGE = 15V

ns

RG = 4.7, L = 87H, TJ = 25C

mJ

RG = 4.7, L = 87H, T J = 175C

IC = 120A, VCC = 400V, VGE =15V

tr

Rise time

64

td(off)

Turn-Off delay time

230

tf

Fall time

51

Cies

Input Capacitance

7780

Coes

Output Capacitance

505

VCC = 30V

Cres

Reverse Transfer Capacitance

245

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

SCSOA

Short Circuit Safe Operating Area

ns

e

RG = 4.7, L = 200H
TJ = 175C

pF

VGE = 0V

TJ = 175C, IC = 480A
VCC = 480V, Vp =600V
Rg = 4.7, VGE = +20V to 0V

VCC = 400V, Vp =600V

Rg = 1.0, VGE = +15V to 0V

Erec

Reverse Recovery Energy of the Diode

2440

trr

Diode Reverse Recovery Time

360

ns

TJ = 175C
VCC = 400V, IF = 120A

Irr

Peak Reverse Recovery Current

53

VGE = 15V, Rg = 4.7, L =87H

Notes:
VCC = 80% (VCES), VGE = 20V, L = 0.87H, RG = 50tested in production ILM 400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90C.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.

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AUIRGPS4067D1

Qualification Information

Automotive
(per AEC-Q101)
Qualification Level

Moisture Sensitivity Level

Machine Model

Comments: This part number(s) passed Automotive qualification.

IRs Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Super-247

N/A
Class M4 (+/- 400V)
AEC-Q101-002

ESD

Human Body Model

Class H3B (+/- 8000V)

AEC-Q101-001

Charged Device Model

Class C5 (+/- 1000V)

AEC-Q101-005

RoHS Compliant

Yes

Qualification standards can be found at International Rectifiers web site:

http://www.irf.com

Highest passing voltage.

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AUIRGPS4067D1
250

800
700

200

600
500

Ptot (W)

IC (A)

150

100

400
300
200

50

100
0
25

50

75

100

125

150

175

20

40

60

80 100 120 140 160 180

T C (C)

T C (C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature
1000

1000

10sec

100

100

IC A)

IC (A)

100sec
10

1msec

10
1
Tc = 25C
Tj = 175C
Single Pulse

DC

0.1
1

10

100

1000

10

10000

100

VCE (V)

VCE (V)

Fig. 3 - Forward SOA

TC = 25C, TJ 175C; VGE =15V

Fig. 4 - Reverse Bias SOA

TJ = 175C; VGE =20V

480

480

420

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

360
300

ICE (A)

300

ICE (A)

420

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

360

240

240

180

180

120

120

60

60

0
0

VCE (V)

10

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 30s

1000

10

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 30s

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AUIRGPS4067D1
480

480
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

420
360

T J = -40C

T J = 25C
T J =175C

360
300

IF (A)

ICE (A)

300

420

240

240

180

180

120

120

60

60

0
0

10

0.0

1.0

2.0

VCE (V)

10

10

ICE = 60A
ICE = 120A
ICE = 195A

0
10

15

ICE = 195A

20

10

15

Fig. 10 - Typical VCE vs. VGE

TJ = 25C

Fig. 9 - Typical VCE vs. VGE

TJ = -40C
480
IC, Collector-to-Emitter Current (A)

10

VCE (V)

20

VGE (V)

VGE (V)

ICE = 60A
ICE = 120A
ICE = 195A

420

T J = -40C
T J = 25C

360

T J = 175C

300
240
180
120
60
0

0
5

10

15
VGE (V)

Fig. 11 - Typical VCE vs. VGE

TJ = 175C

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5.0

ICE = 60A
ICE = 120A

4.0

Fig. 8 - Typ. Diode Forward Characteristics

tp = 30s

VCE (V)

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175C; tp = 30s

3.0

VF (V)

20

10

12

14

16

VGE, Gate-to-Emitter Voltage (V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s

AUIRGPS4067D1
35000

1000

30000

tdOFF

EON

Swiching Time (ns)

Energy (J)

25000
20000
15000

EOFF

10000

100

tdON
tF

5000

tR

10
0

50

100

150

200

250

50

100

150

IC (A)

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175C; L = 0.087mH; VCE = 400V, RG = 5.0; VGE = 15V
35000

250

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175C; L = 0.087mH; VCE = 400V, RG = 5.0; VGE = 15V
10000

30000

tdOFF

EON

Swiching Time (ns)

25000

Energy (J)

200

IC (A)

20000
EOFF

15000
10000

1000
tdON
tF
100
tR

5000
0

10

20

40

60

80

100

120

25

50

75

100

RG ()

RG ()

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V

60

52
50

RG = 4.7

55

48
46

RG = 10

IRR (A)

IRR (A)

50
45

42

40

RG = 2

40

35

38

RG = 50
30

36

50

100

150

200

IF (A)

Fig. 17 - Typ. Diode IRR vs. IF

TJ = 175C

44

250

10

20

30

40

50

60

RG (

Fig. 18 - Typ. Diode IRR vs. RG

TJ = 175C

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60

35000

55

30000

50

25000
240A

QRR (nC)

IRR (A)

AUIRGPS4067D1

45

20000

50

4.7

10

15000

40

120A

35

10000

30

5000

200

400

600

800

1000

1200

60A
200

1400

400

600

800 1000 1200 1400 1600

diF /dt (A/s)

diF /dt (A/s)

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175C

Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 120A; TJ = 175C

RG = 20

5000
4500

Time (s)

RG = 50

2500

Isc

800

14

700

12

600

10

500

400

300

Current (A)

3500
3000

Tsc

16

RG = 10
RG = 4.7

4000
Energy (J)

900

18

5500

2000
1500

200

1000
0

50

100

150

200

250

300

350

10

16

18

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25C

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 175C

16

VGE, Gate-to-Emitter Voltage (V)

100000

Cies

10000

Capacitance (pF)

14

VGE (V)

IF (A)

1000
Coes

100
Cres

V CES = 400V

14

V CES = 300V

12
10
8
6
4
2
0

10
0

100

200

300

400

VCE (V)

Fig. 23 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

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12

500

50

100

150

200

250

Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 120A

AUIRGPS4067D1

Thermal Response ( Z thJC )

0.1

D = 0.50
0.20
0.10

0.01

0.05
J

0.02
0.01

0.001

R1
R1
J
1

R2
R2
2

R3
R3
3

Ri (C/W) i (sec)
0.0564 0.000253
0.0888
0.0547

Ci= iRi
Ci iRi

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006

1E-005

0.003155
0.014893

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Thermal Response ( Z thJC )

D = 0.50
0.1

0.20
0.10
0.05

0.01

0.02
0.01

SINGLE PULSE
( THERMAL RESPONSE )

1E-005

J
1

R2
R2

R3
R3

Ri (C/W) i (sec)

R4
R4
C

Ci= iRi
Ci iRi

0.001

0.0001
1E-006

R1
R1

0.00597

0.000016

0.14039

0.000387

0.19117

0.004096

0.10156

0.021245

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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AUIRGPS4067D1
L

L
DUT

VCC

80 V +

1K

DUT

VCC

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
L

4X
DC

-5V

VCC

DUT /
DRIVER

DUT

VCC

Rg

RSH
Fig.C.T.3 - S.C. SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

C force
R=

VCC
ICM

100K
D1
DUT
Rg

22K
C sense

VCC

G force

DUT
0.0075F

E sense

E force
Fig.C.T.5 - Resistive Load Circuit

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Fig.C.T.6 - BVCES Filter Circuit

AUIRGPS4067D1
600

180

600

500

150

500

180
150

120

400

120

300

90

300

90

200

60

200

60

100

30

50E-8

30

1E-6

-100
-5E-7

-30
2E-6

0E+0

5E-7

time(s)

time (s)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175C using Fig. CT.4

800

160

800
ICE

700
120

700

600
500
V c e (V )

80

IF (A)

1E-6

-30
2E-6

40

600
500

V CE

400

400

300

300

200

200

100

100

Ic e (A )

-100
-50E-8 00E+0

100
V CE

ICE

V CE (V)

400

ICE (A)

V CE (V)

V CE

ICE (A)

ICE

-40

0
-80
-5.0E-7

0.0E+0
5.0E-7
time (ns)

1.0E-6

-100
-5.0E-6 0.0E+0 5.0E-6 1.0E-5

-100
1.5E-5

time (s)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175C using Fig. CT.4

10

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25C using Fig. CT.3

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AUIRGPS4067D1
Case Outline and Dimensions Super-247

Super-247 (TO-274AA) Part Marking Information

Part Number

AUPS4067D1

YWWA

IR Logo

XX

or

Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree

XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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11

AUIRGPS4067D1

Ordering Information
Base part number Package Type

AUIRGPS4067D1

12

Super-247

Standard Pack
Form
Tube

Complete Part Number

Quantity
25

AUIRGPS4067D1

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AUIRGPS4067D1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and
to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and /
or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids
all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR
is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim
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For technical support, please contact IRs Technical Assistance Center

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WORLD HEADQUARTERS:
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