2N3702

2N3702
PNP General Purpose Amplifier
This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
Sourced from Process 68.
See PN200 for Characteristics.

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25C unless otherwise noted
Symbol
VCEO

Collector-Emitter Voltage

Parameter

Value
-25

Units
V

VCBO
VEBO

Collector-Base Voltage

-40

Emitter-Base Voltage

-5.0

IC

Collector Current

-500

mA

TJ, TST

Operating and Storage Junction Temperature Range

-55 ~ +150

- Continuous

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25C unless otherwise noted

Symbol
Off Characteristics

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV(BR)CEO

Collector-Emitter Breakdown Voltage

IC = -10mA, IB = 0

-25

BV(BR)CBO

Collector-Base Breakdown Voltage

IC = -100A, IE = 0

-40

BV(BR)EBO

Emitter-Base Breakdown Voltage

IE = -100A, IC = 0

-5.0

ICBO

Collector Cut-off Current

VCB = -20V, IE = 0

-100

nA

IEBO

Emitter Cut-off Current

VEB = -3.0V, IC = 0

-100

nA

On Characteristics *
hFE

DC Current Gain

VCE= -5.0V, IC = -50mA

VCE(sat)

Collector-Emitter Saturation Voltage

IC = -50mA, IB = -5.0mA

VBE(sat)

Base-Emitter Saturation Voltage

VCE= -5.0V, IC = -50mA

60
-0.6

300
-0.25

-1.0

Small Signal Characteristics

Cob

Current Gain Bandwidth Product

VCB = -10V, f = 1.0MHz

fT

Output Capacitance

IE = -50mA, VCE = -5.0V

12

pF

100

MHz

* Pulse Test: Pulse 300s, Duty Cycle 2.0%

Thermal Characteristics TA=25C unless otherwise noted

Symbol
PD

Parameter
Total Device Dissipation
Derate above 25C

Max.
625
5.0

Units
mW
mW/C

RJC

Thermal Resistance, Junction to Case

83.3

C/W

RJA

Thermal Resistance, Junction to Ambient

200

C/W

2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

2N3702

Package Dimensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

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Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

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First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
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Rev. I