Philips Semiconductors

Product specification

Triacs

MAC223 series

GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.

PINNING - TO220AB
PIN

DESCRIPTION

main terminal 1

main terminal 2

gate

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX MAX. UNIT

MAC223

VDRM

Repetitive peak off-state

voltages
RMS on-state current
Non-repetitive peak on-state
current

IT(RMS)
ITSM

PIN CONFIGURATION

A6

A8

400

600

25
230

25
230

A
A

SYMBOL

tab

T2

tab

T1

1 23

main terminal 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.
MAC223

VDRM

Repetitive peak off-state

voltages

IT(RMS)
ITSM

RMS on-state current

Non-repetitive peak
on-state current

I2t
dIT/dt

IGM
VGM
PGM
PG(AV)
Tstg
Tj

I2t for fusing

Repetitive rate of rise of
on-state current after
triggering

Peak gate current

Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature

full sine wave; Tmb 91 C

full sine wave; Tj = 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 30 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
T2+ G+
T2+ GT2- GT2- G+

over any 20 ms period

MAX.

UNIT

A6

A8

4001

6001

25

190
230
180

A
A
A2s

-40
-

50
50
50
10
2
5
5
0.5
150
125

A/s
A/s
A/s
A/s
A
V
W
W
C
C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.
July 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs

MAC223 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient

Rth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

60

1.0
1.4
-

K/W
K/W
K/W

MIN.

TYP.

MAX.

UNIT

T2+ G+
T2+ GT2- GT2- G+

6
10
11
23

50
50
50
75

mA
mA
mA
mA

T2+ G+
T2+ GT2- GT2- G+

8
30
18
15

40
60
40
60

mA
mA
mA
mA

IT = 30 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 C
VD = VDRM(max); Tj = 125 C

0.25
-

7
12
1.3
0.7
0.4
0.1

30
30
1.55
1.5
0.5

mA
mA
V
V
V
mA

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A

IL

Latching current

IH

Holding current

VT
VGT

On-state voltage
Gate trigger voltage

ID

Off-state leakage current

VD = 12 V; IGT = 0.1 A

VD = 12 V; IGT = 0.1 A

T2+
T2-

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dVD/dt

Critical rate of rise of

off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time

VDM = 67% VDRM(max); Tj = 125 C;

exponential waveform; gate open circuit
VDM = 400 V; Tj = 95 C; IT(RMS) = 25 A;
dIcom/dt = 9 A/ms; gate open circuit
ITM = 30 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/s

100

300

V/s

10

V/s

dVcom/dt
tgt

July 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs

40

MAC223 series

Tmb(max) / C

Ptot / W

85

30

= 180
30

IT(RMS) / A

BTA140
91 C

25
95

120
90

20

60
20

105

30

15
10

115

10

5
0

10

15
IT(RMS) / A

20

125
30

25

0
-50

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where = conduction angle.

1000

50
Tmb / C

100

150

Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

ITSM / A

50

IT(RMS) / A

40

30
100
dI T /dt limit

20
I TSM

IT

T2- G+ quadrant

10

time

Tj initial = 25 C max
10
10us

100us

1ms
T/s

10ms

0
0.01

100ms

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.

200

1.6

ITSM
T

150

10

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 91C.

ITSM / A
IT

0.1
1
surge duration / s

VGT(Tj)
VGT(25 C)

1.4

time

Tj initial = 25 C max

1.2

100

1
0.8

50

0.6
0

10
100
Number of cycles at 50Hz

0.4
-50

1000

Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

July 2001

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.

Rev 1.000

Philips Semiconductors

Product specification

Triacs

MAC223 series

IGT(Tj)
IGT(25 C)
T2+ G+
T2+ GT2- GT2- G+

BTA140

IT / A

80

Tj = 125 C
Tj = 25 C

70

typ

60 Vo = 1.073 V

max

Rs = 0.015 ohms

50

3
40

30
20

1
10

0
-50

50
Tj / C

100

150

0.5

1.5
VT / V

2.5

Fig.10. Typical and maximum on-state characteristic.

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.

IL(Tj)
IL(25 C)

10

2.5

BTA140

Zth j-mb (K/W)

unidirectional
bidirectional

2
0.1

1.5

P
D

tp

0.01

0.5

0
-50

50
Tj / C

100

0.001
10us

150

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.

0.1ms

1ms

10ms
tp / s

0.1s

1s

10s

Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.

IH(Tj)
IH(25C)

1000

dV/dt (V/us)

off-state dV/dt limit

2.5
100

2
1.5

dIcom/dt =
25 A/ms
10

20

15

12

9.0

7.0

0.5
0
-50

50
Tj / C

100

150

50

100

150

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.

July 2001

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

Rev 1.000

Philips Semiconductors

Product specification

Triacs

MAC223 series

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned

3,0

13,5
min
1,3
max 1 2 3
(2x)

0,9 max (3x)

2,54 2,54

0,6
2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

July 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs

MAC223 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 2001

Rev 1.000