IRFS4321-7PPbF

Application
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits

HEXFET Power MOSFET

VDSS

150V

RDS(on) typ.

11.7m

max
S

Benefits
Low Rdson Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching &
EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA

14.7m

ID

86A

Base part number

Package Type

IRFS4321-7PPbF

D2Pak-7Pin

D2Pak 7Pin
G

Gate

Drain

Source

Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800

Orderable Part Number

IRFS4321-7PPbF
IRFS4321TRL7PP

Parameter
Continuous Drain Current, VGS @ 10V

Max.
86

Units

ID @ TC = 25C
ID @ TC = 100C

Continuous Drain Current, VGS @ 10V

61

IDM

Pulsed Drain Current

343

PD @TC = 25C

Maximum Power Dissipation

350

Linear Derating Factor

2.3

W/C

VGS
EAS (Thermally limited)
TJ
TSTG

Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)

30
120

V
mJ

-55 to + 175
C
300

Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient

RJC
RJA

Typ.

Max.
0.43*
40

Units
C/W

RJC (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150C and is accounted for by the physical wear out of the die attach medium.

Notes through are on page 2

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IRFS4321-7PPbF

Static @ TJ = 25C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

150

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

150

mV/C Reference to 25C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

11.7

14.7

VGS(th)

Gate Threshold Voltage

3.0

5.0

IDSS

Drain-to-Source Leakage Current

0.8

100
-100

V(BR)DSS

Drain-to-Source Breakdown Voltage

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Internal Gate Resistance

IGSS
RG(int)

Conditions
VGS = 0V, ID = 250A

m VGS = 10V, ID = 34A

V

VDS = VGS, ID = 250A

20

VDS =150 V, VGS = 0V

1.0

mA VDS =150V,VGS = 0V,TJ =125C

nA

VGS = 20V
VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

gfs
Qg
Qgs
Qgd
td(on)
tr

Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time

130

71
24
21
18
60

110

td(off)

Turn-Off Delay Time

25

tf
Ciss
Coss

Fall Time
Input Capacitance
Output Capacitance

35
4460
390

Crss

Reverse Transfer Capacitance

82

VDS = 25V, ID =50A

ID = 50A
nC VDS = 75V
VGS = 10V
VDD = 98V
ID = 50A
ns
RG= 2.5
VGS = 10V
S

VGS = 0V
pF VDS = 50V
= 1.0MHz

Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

Min.

Typ. Max. Units

86

343

VSD

Diode Forward Voltage

1.3

trr
Qrr
IRRM

Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

89
300
6.5

130
450

ns
nC
A

IS
ISM

Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.

G
S

TJ = 25C,IS = 50A,VGS = 0V
IF = 50A,
VDD = 128V
di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Limited by Tjmax, starting TJ = 25C, L = 0.096mH, RG = 25, IAS = 50A, VGS =10V. Part not recommended for use above this value.
Pulse width 400s; duty cycle 2%.
Ris measured at TJ approximately 90C

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IRFS4321-7PPbF

1000

1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

100
BOTTOM

10

5.0V

60s PULSE WIDTH

Tj = 25C

10

100
BOTTOM

5.0V

10

60s PULSE WIDTH

Tj = 175C
1

0.1
0.1

0.1

100

1000

100

3.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID, Drain-to-Source Current)

10

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

TJ = 175C
10

TJ = 25C

VDS = 25V

60s PULSE WIDTH

0.1
3.0

4.0

5.0

6.0

7.0

8.0

ID = 50A

VGS = 10V

3.0

2.5

2.0

1.5

1.0

0.5

9.0

-60 -40 -20

VGS, Gate-to-Source Voltage (V)

7000

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd

5000

Ciss
4000
3000

Coss

2000
1000

Crss
10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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ID= 50A
VDS = 120V

16

VDS= 75V
VDS= 30V

12

0
1

20 40 60 80 100 120 140 160 180

Fig 4. Normalized On-Resistance vs. Temperature

20

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

6000

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

C, Capacitance (pF)

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

2013 International Rectifier

20

40

60

80

100

120

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

June 14, 2013

IRFS4321-7PPbF

1000
ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

100

TJ = 175C
10

TJ = 25C

OPERATION IN THIS AREA

LIMITED BY R DS (on)
100sec

100

1msec

10

10msec

1
Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V
0.1

0.1
0.2

0.4

0.6

0.8

1.0

1.2

1.4

90
80

ID, Drain Current (A)

70
60
50
40
30
20
10
0
50

75

100

125

150

1000

190

180

170

160

150

140
-60 -40 -20

175

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

TC , Case Temperature (C)

Fig 10. Drain-toSource Breakdown Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

500

EAS, Single Pulse Avalanche Energy (mJ)

5.0

4.0

Energy (J)

100

Fig 8. Maximum Safe Operating Area

V(BR)DSS , Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode Forward Voltage

25

10

VDS , Drain-toSource Voltage (V)

VSD , Source-to-Drain Voltage (V)

3.0

2.0

1.0

I D
13A
20A
BOTTOM 50A
TOP

400

300

200

100

0.0
0

20

40

60

80

100

120

140

160

VDS, Drain-to-Source Voltage (V)

Fig 11. Typical Coss Stored Energy

4

DC

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25

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig 12. Maximum Avalanche Energy Vs. Drain Current

June 14, 2013

IRFS4321-7PPbF

Thermal Response ( Z thJC )

D = 0.50
0.20

0.1

0.10
0.05

0.02

0.01

0.01

R1
R1
J
1

R2
R2
2

R3
R3

Ci= iRi
Ci= iRi

SINGLE PULSE
( THERMAL RESPONSE )

Ri (C/W)
C

(sec)

0.085239 0.000052
0.18817 0.00098
0.176912 0.008365

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)

Duty Cycle = Single Pulse

Avalanche Current (A)

0.01
10

0.05
0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.

0.1
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs. Pulse width

EAR , Avalanche Energy (mJ)

120

TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A

100

80

60

40

20

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature (C)

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) = T/ ZthJC
Iav = 2T/ [1.3BVZth]
EAS (AR) = PD (ave)tav

Fig 15. Maximum Avalanche Energy vs. Temperature

5

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IRFS4321-7PPbF

40

ID = 1.0A

ID = 1.0mA

5.0

ID = 250A

30

IRRM - (A)

VGS(th), Gate threshold Voltage (V)

6.0

4.0

3.0

20

IF = 33A
VR = 128V

10
2.0

TJ = 125C
TJ = 25C

1.0
-75 -50 -25

25

50

75

100 200 300 400 500 600 700 800 900 1000

100 125 150 175

dif / dt - (A / s)

TJ , Temperature ( C )

Fig 17. Typical Recovery Current vs. dif/dt

Fig 16. Threshold Voltage vs. Temperature

3200

40

2800
2400

QRR - (nC)

IRRM - (A)

30

20

IF = 50A
VR = 128V

10

1600
1200
IF = 33A
VR = 128V

800

TJ = 125C
TJ = 25C

2000

TJ = 125C
TJ = 25C

400
0

100 200 300 400 500 600 700 800 900 1000

100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

dif / dt - (A / s)

Fig 18. Typical Recovery Current vs. dif/dt

Fig 19. Typical Stored Charge vs. dif/dt

3200
2800

QRR - (nC)

2400
2000
1600
1200
IF = 50A
VR = 128V

800

TJ = 125C
TJ = 25C

400
0

100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

Fig 20. Typical Stored Charge vs. dif/dt

6

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IRFS4321-7PPbF

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
V(BR)DSS
tp

15V

VDS

D.U.T

RG

IAS
20V

tp

DRIVER

+
V
- DD

I AS

0.01

Fig 22a. Unclamped Inductive Test Circuit

Fig 22b. Unclamped Inductive Waveforms

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id
Vds
Vgs

Vgs(th)

Qgs1 Qgs2

Fig 24a. Gate Charge Test Circuit

7

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Qgd

Qgodr

Fig 24b. Gate Charge Waveform

June 14, 2013

IRFS4321-7PPbF

D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches))

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFS4321-7PPbF

D2Pak-7Pin Part Marking Information

D2Pak-7Pin Tape and Reel

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9

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2013 International Rectifier

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IRFS4321-7PPbF

Qualification Information
Industrial

Qualification Level

(per JEDEC JESD47F)

Moisture Sensitivity Level

D2Pak-7Pin

MSL1
Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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