1.

When transistors are used in digital circuits they usually operate in the:
A.active region
B.breakdown region
C.saturation and cutoff regions
D.linear region

2.
Three different Q points are shown on a dc load line. The upper Q point
represents the:
A.minimum current gain
B.intermediate current gain
C.maximum current gain
D.cutoff point

3.

A transistor has a
IC, equals:
A
500 A
.
B
5 mA
.
C
50 mA
.
D
5A
.

of 250 and a base current, IB, of 20

A. The collector current,

4. A current ratio of IC/IE is usually less than one and is called:

A.beta
C.alpha

B.theta
D.omega

5.
With the positive probe on an NPN base, an ohmmeter reading between the
other transistor terminals should be:
A.open
B.infinite
C.low resistance
D.high resistance
6.

In a C-E configuration, an emitter resistor is used for:

A. stabilization

B. ac signal bypass
C. collector bias
D. higher gain

7.

Voltage-divider bias provides:

A.an unstable Q point
B. a stable Q point
C. a Q point that easily varies with changes in the transistor's current gain

D. a Q point that is stable and easily varies with changes in the transistors
current gain

8.
To operate properly, a transistor's base-emitter junction must be forward
biased with reverse bias applied to which junction?
A. collector-emitter

B. base-collector

C. base-emitter

9.

D. collector-base

The ends of a load line drawn on a family of curves determine:

A. saturation and cut-off
B. the operating point
C. the power curve
D. the amplification factor

10.
If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 , what is
the base bias voltage?
A.8.70 V
B.4.35 V
C.2.90 V
D.0.7 V

11.

The C-B configuration is used to provide which type of gain?

A.voltage

B.current

C.resistance

D.power

12.

The Q point on a load line may be used to determine:

A.VC
B.VCC
C.VB
D.IC

13.

A transistor may be used as a switching device or as a:

A.fixed resistor

B.tuning device

C.rectifier

D.variable resistor

14.
If an input signal ranges from 2040 A (microamps), with an output signal
ranging from .51.5 mA (milliamps), what is the ac beta?

15.

A.0.05

B.20

C.50

D.500

A collector characteristic curve is a graph showing:

A.emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
B.collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
C.collector current (IC) versus collector-emitter voltage (VC) with (VBB) base
bias voltage held constant
D.collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base
bias voltage held constant

16.

With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q
point voltage, with ID = 3 mA?
A.6 V
B.10 V
C.24 V
D.30 V

17.

When an input signal reduces the channel size, the process is called:
A.enhancement
B.substrate connecting
C.gate charge
D.depletion

18.

A MOSFET has how many terminals?

A.2 or 3
C.4

B.3
D.3 or 4

19. What is the input impedance of a common-gate configured JFET?

A.very low
B.low
C.high
D.very high

20. Which of the following transistor(s) has (have) depletion and enhancement
types?
A. BJT
B. JFET
C. MOSFET
D. None of the above

21.

When VGS = 0 V, a JFET is:

A. saturated
B. an analog device
C. an open switch
D. cut off

22. Pinch-off voltage VP for an FET is the drain voltage at which

A. significant drain current starts flowing
B. drain current becomes zero
C. all free charges get removed from the channel
D. avalanche break down takes place

23. Compared to bipolar transistor, a JFET has

A. lower input impedance
B. higher voltage gain
C. higher input impedance and high voltage gain
D. higher input impedance and low voltage gain

24. Which of the following is true?

A. MOSFET is used in Sample and Hold circuit as a switch.
B. P-MOSFET and N-MOSFET are used in digital logic circuits
C. C-MOSFET is very popular in fabricating of MSI and LSI technology.
D. All of the Above

25. What is the meaning of MOSFET?

A. MetalOxideSemiconductor Field Effect Transistor
B. MaximumOperationalSemiconductor Field Effect Transistor
C. MetalOxideSignal Field Effect Transistor
D. MetalOxideSentient Field Effect Transistor

26. ___________ is the electronic noise generated by the thermal agitation of the
charge carriers inside an electrical conductor at equilibrium, which happens
regardless of any applied voltage.
A. Voltaic Noise
B. Johnson Noise
C. Randomized Noise
D. None of the Above

27. VMOS Stands for?

A. Virtual Memory Operating System
B. Voltaic-Metal-Oxide-Semiconductor
C. Vertical-Metalloid-Open-Semiconductor
D. Vertical-Metal-Oxide-Semiconductor
28. CMOS stands for?
A. Complementary- Metal-Oxide-Semiconductor
B. Commercial- Metal-Oxide-Semiconductor
C. Conductive- Metal-Oxide-Semiconductor
D. Charged- Metal-Oxide-Semiconductor

29.
For the BJT to operate in the active (linear) region, the base-emitter junction
must be ________-biased and the base-collector junction must be ________-biased.
A.forward, forward
B.forward, reverse
C.reverse, reverse
D.reverse, forward

30. Calculate VCE.

A.4.52 V

B.4.52 V

C.9 V

D.9 V

31.

32.

Calculate the voltage across the 91 k

resistor.

A.18 V

B.9.22 V

C.3.23 V

D.None of the above

For what value of does the transistor enter the saturation region?

A.20

B.50

C.75

D.116

33. For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.
A.True
B.False

34.

Which of the following applies to a safe MOSFET handling?

A.Always pick up the transistor by the casing.
B.Power should always be off when network changes are made.
C.Always touch ground before handling the device.
D.All of the above

35. The class D amplifier uses what type of transistors?

A.JFETs
B.BJTs
C.MOSFETs
D.any of the above
36. An FET is a ________-controlled device.
A.current

B.voltage

37 Refer to this figure. Find the value of VD.

.

A
20 V
.
B
11 V
.
C
10 V
.

D
9V
.

38. A BJT is a ________-controlled device.

A.current

B.voltage

39. A common-drain amplifier is similar in configuration to which BJT amplifier?

A. common-emitter B. common-collector
C. common-base

D. common-gate

40. If one P-N junction of a transistor if forward-biased, whereas the other is

_______________.
A. Reverse-biased
B. Largest current
C. Smallest current
D. None of the Above
41. Other term for minority current.
A. Largest current
C. Conventional current

B. Leakage current
D. None of the Above

42. In cut-off region the base-emitter and collector-base junctions are

___________________.
A. Forward-biased
B. Both reverse-biased
C. Reverse-biased
D. None of the Above
43. An AC network cannot be measured with an ohmmeter.
A. Output impedance
B. Input impedance
C. Biasing
D. None of the Above
44. It is the least sensitive to changes in collector current.
A. Amplification factor
B. Output impedance
C. Input impedance
D. None of the Above
45. It is one in which a current defines the operating conditions of the device.
A. Voltage controlled
B. Current controlled
C. Resistor controlled
D. None of the Above

46. It is one in which a particular voltage defines the operating condition.

A. Voltage controlled
B. Current controlled
C. Resistor controlled
D. None of the Above
47. It is labeled less and occurs when
A. Maximum current
B. Minimum current
C. Less current
D. None of the Above

Vgs=0V

48. It is occurs at pinch-off defined by

A. Maximum current
B. Minimum current
C. Less current
D. None of the Above

Vgs=Vp

49. It provides a transistor having a very large current gain, typically a few
thousand.
A. Cascaded System
B. Darlington transistor
C. Input Impedance
D. None of the Above
50. It is a two-transistor circuit that operates like the Darlington circuit.
A. Current Gain
B. Cascaded System
C. Feedback Gain
D. No Gain

Answer Sheet.
1. C.saturation and cutoff regions
2. C.maximum current gain
3. B.5 mA
4. C.alpha
5. C.low resistance

25. A. MetalOxideSemiconductor
Field Effect Transistor
26. B. Johnson Noise
27. D. Vertical-Metal-OxideSemiconductor

6. A. stabilization

28. A. Complementary- Metal-OxideSemiconductor

7. B. a stable Q point

29. B.forward, reverse

8. D. collector-base

30. B.4.52 V

9. A. saturation and cut-off

31. C.3.23 V

10. B.4.35 V

32. D.116

11. A.voltage

33. A.True

12. C.VB

34. D.All of the above

13. D.variable resistor

35. C.MOSFETs

14. C.50

36. B.voltage

15. B.collector current (IC) versus

collector-emitter voltage
(VCE)
with (VBB) base bias voltage held
constant

37. D.9 V

16. A.6 V

40. A. Reverse-biased

17. D.depletion

41. B. Leakage current

18. D.3 or 4

42. C. Reverse-biased

19. A.very low

43. B. Input impedance

20. C. MOSFET

44. A. Amplification factor

21. A. saturated

45. B. Current controlled

22. C. all free charges get removed

from the channel

46. A. Voltage controlled

23. D. higher input impedance and low

voltage gain
24. D. All of the Above

38. A.current
39. B. common-collector

47. A. Maximum current

48. B. Minimum current
49. B. Darlington transistor
50. C. Feedback Gain