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RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
OUTLINE
DRAWING
1.3+/-0.4
3.2+/-0.4
9.1+/-0.7
FEATURES
12.3MIN
3.6+/-0.2
2
9+/-0.4
12.3+/-0.6
-tions.
4.8MAX
1.2+/-0.4
0.8+0.10/-0.15
1 2 3
0.5+0.10/-0.15
APPLICATION
3.1+/-0.6
5deg
9.5MAX
4.5+/-0.5
2.5 2.5
PINS
1:GATE
2:SOURCE
3:DRAIN
note:
Torelance of no designation means typical value.
Dimension in mm.
RoHS COMPLIANT
RD15HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter G after the lot
marking.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Vgs=0V
30
VGSS
Vds=0V
+/-20
Pch
Channel dissipation
Tc=25C
48
Pin
Input power
Zg=Zl=50
1.5(Note2)
ID
Drain current
Tch
Channel temperature
150
Tstg
Storage temperature
-40 to +150
Rth j-c
Thermal resistance
2.6
C/W
junction to case
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
LIMITS
UNIT
MIN
TYP
MAX.
IDSS
VDS=17V, VGS=0V
100
uA
IGSS
VGS=10V, VDS=0V
uA
VTH
VDS=12V, IDS=1mA
1.5
2.0
2.5
Output power
VDD=12.5V, Pin=0.6W,
15
18
Drain efficiency
f=175MHz,Idq=0.5A
55
60
Output power
VDD=12.5V, Pin=3W,
15
18
Drain efficiency
f=520MHz,Idq=0.5A
50
55
VDD=15.2V,Po=15W(PinControl)
Pout1
D1
Pout2
D2
No destroy
No destroy
f=175MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Load VSWR tolerance
VDD=15.2V,Po=15W(PinControl)
f=520MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
10
CHANNEL DISSIPATION
Pch(W)
100
60
Ids(A)
80
40
Ta=+25C
Vds=10V
4
2
20
0
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(C)
Vds-Ids CHARACTERISTICS
10
80
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Ta=+25C
f=1MHz
60
Ciss(pF)
Ta=+25C
Ids(A)
4
6
Vgs(V)
10
Vgs=3V
0
0
4
6
Vds(V)
40
20
Vgs=4V
10
10
Vds(V)
15
20
100
10
Ta=+25C
f=1MHz
80
60
40
6
4
20
0
0
Ta=+25C
f=1MHz
8
Crss(pF)
Coss(pF)
10
Vds(V)
15
20
10
Vds(V)
15
20
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
100
100
Po
80
30
60
Gp
20
Pout(W) , Idd(A)
40
25
Po
80
d
15
60
20
40
10
10
20
0
0.0
40
Ta=25C
f=175MHz
Vdd=12.5V
Idq=0.5A
d(%)
Ta=+25C
f=175MHz
Vdd=12.5V
Idq=0.5A
d(%)
50
Pin-Po CHARACTERISTICS
20
Idd
0
0
10
20
Pin(dBm)
30
40
1.5
Pin-Po CHARACTERISTICS
100
25
80
20
100
Po
80
60
20
40
Gp
10
15
60
Po
Ta=25C
f=520MHz
Vdd=12.5V
Idq=0.5A
10
20
40
d(%)
30
Pout(W) , Idd(A)
d(%)
Ta=+25C
f=520MHz
Vdd=12.5V
Idq=0.5A
1.0
Pin(W)
Pin-Po CHARACTERISTICS
50
0
0.5
20
Idd
0
10
20
Pin(dBm)
30
40
0
0
Vdd-Po CHARACTERISTICS
5
4
20
15
Idd
10
5
0
6
8
10
Vdd(V)
12
Po(W)
Po
15
3
Pin(W)
25
Idd(A)
Po(W)
20
Vdd-Po CHARACTERISTICS
25
Ta=25C
f=175MHz
Pin=0.6W
Idq=0.5A
Zg=ZI=50 ohm
5
Ta=25C
f=520MHz
Pin=3W
Idq=0.5A
Zg=ZI=50 ohm
Po
3
Idd
10
14
0
4
8
10
Vdd(V)
12
14
Idd(A)
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
Tc=-25~+75C
Ids(A)
-25C
+25C
6
+75C
4
2
0
0
4
6
Vgs(V)
10
TEST CIRCUIT(f=175MHz)
Vdd
Vgg
C1
9.1kOHM
C3
L3
8.2kOHM
100OHM
C2
175MHz
RD15HVF1
L1
RF-IN
L2
RF-OUT
56pF
82pF
56pF
25pF
25pF
22
12
40
42
45
62
73
74
92
95
100
100
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TEST CIRCUIT(f=520MHz)
Vdd
Vgg
C1
C3
9.1kOHM
L3
100OHM
8.2kOHM
15pF
10pF
L1
C2
520MHz
RD15HVF1
RF-IN
L2
RF-OUT
56pF
56pF
5pF
12pF
90
90
100
100
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
f=520MHz Zout
f=520MHz Zin
f=175MHz Zout
Zo=50ohm
f=175MHz Zin
Zin , Zout
f
Zin
Zout
(MHz)
(ohm)
(ohm)
Conditions
175
2.34-j8.01
3.06+j0.74
Po=15W, Vdd=12.5V,Pin=0.6W
520
5.42+j9.22
6.02+j12.34
Po=15W, Vdd=12.5V,Pin=3.0W
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
S11
(mag)
0.717
0.726
0.744
0.748
0.755
0.770
0.787
0.804
0.821
0.838
0.849
0.854
0.862
0.900
0.904
0.909
0.910
0.910
0.911
S21
(ang)
-145.9
-163.9
-171.1
-173.6
-175.9
-179.0
177.6
174.6
171.2
168.2
165.1
163.7
161.7
145.0
141.3
137.9
134.6
131.2
127.5
(mag)
23.274
12.054
8.049
6.804
5.886
4.622
3.731
3.092
2.623
2.229
1.938
1.845
1.695
0.971
0.864
0.790
0.738
0.662
0.612
S12
(ang)
101.8
85.7
74.7
70.2
66.3
58.6
51.5
45.3
39.1
33.2
28.3
26.1
22.9
4.2
0.0
-1.4
-4.4
-6.8
-8.4
(mag)
0.023
0.024
0.025
0.025
0.026
0.030
0.036
0.044
0.053
0.062
0.072
0.076
0.082
0.135
0.143
0.153
0.163
0.170
0.178
S22
(ang)
26.0
27.7
36.1
41.8
48.1
57.7
65.3
70.3
73.5
74.6
73.9
73.9
72.6
62.8
59.6
57.8
54.8
51.4
49.4
(mag)
0.556
0.547
0.560
0.571
0.588
0.625
0.647
0.683
0.716
0.734
0.765
0.777
0.788
0.859
0.870
0.877
0.880
0.886
0.892
(ang)
-130.2
-150.4
-157.8
-160.1
-161.8
-164.3
-167.5
-170.9
-173.7
-176.8
179.4
178.0
176.3
159.0
155.7
152.4
149.0
145.7
142.1
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W