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PMV65XP
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
3. Applications
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 C
-20
VGS
gate-source voltage
-12
12
ID
drain current
-4.3
58
74
Static characteristics
RDSon
drain-source on-state
resistance
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PMV65XP
NXP Semiconductors
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
gate
source
drain
Simplified outline
Graphic symbol
D
2
S
TO-236AB (SOT23)
017aaa257
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMV65XP
Name
Description
Version
TO-236AB
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMV65XP
%M9
[1]
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 C
-20
VGS
gate-source voltage
-12
12
ID
drain current
-4.3
[1]
-2.8
[1]
-1.8
-16
[2]
480
mW
[1]
833
mW
4165
mW
IDM
Ptot
Tamb = 25 C
Tsp = 25 C
PMV65XP
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PMV65XP
NXP Semiconductors
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-55
150
Tamb
ambient temperature
-55
150
Tstg
storage temperature
-65
150
-1.6
Source-drain diode
IS
source current
[1]
[2]
Tsp = 25 C
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (C)
PMV65XP
0
- 75
175
Fig. 2.
- 25
75
125
Tj (C)
175
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25
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PMV65XP
NXP Semiconductors
017aaa838
-102
Limit RDSon = VDS/ID
ID
(A)
-10
tp = 1 ms
-1
tp = 10 ms
DC; Tsp = 25 C
-10-1
tp = 100 ms
DC; Tamb = 25 C;
drain mounting pad 6 cm2
-10-2
-10-1
-1
-10
-102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMV65XP
Min
Typ
Max
Unit
[1]
230
260
K/W
[2]
125
150
K/W
25
30
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMV65XP
NXP Semiconductors
017aaa839
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
1
10-3
10-2
10-1
102
10
103
tp (s)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa840
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0
0.02
0.01
1
10-3
10-2
10-1
102
10
103
tp (s)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 A; VGS = 0 V; Tj = 25 C
-20
VGSth
gate-source threshold
voltage
-0.47
-0.65
-0.9
IDSS
-1
-100
PMV65XP
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PMV65XP
NXP Semiconductors
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
-100
nA
VGS = 12 V; VDS = 0 V; Tj = 25 C
100
nA
58
74
82
105
67
92
VGS = -1.8 V; ID = -1 A; Tj = 25 C
87
135
15
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
7.7
nC
QGS
gate-source charge
Tj = 25 C
nC
QGD
gate-drain charge
1.65
nC
Ciss
input capacitance
744
pF
Coss
output capacitance
Tj = 25 C
65
pF
Crss
reverse transfer
capacitance
53
pF
td(on)
ns
tr
rise time
Tj = 25 C; ID = -1 A
18
ns
td(off)
135
ns
tf
fall time
68
ns
-0.8
-1.2
Source-drain diode
VSD
source-drain voltage
IS = -0.9 A; VGS = 0 V; Tj = 25 C
017aaa841
-12
-4.5 V
-2.5 V
-2 V
ID
(A)
VGS = -1.8 V
ID
(A)
-1.7 V
-9
10-4
-1.6 V
-6
017aaa850
10-3
min
typ
max
0.4
0.6
0.8
1.0
VGS (V)
-1.5 V
10-5
-3
Fig. 6.
-1.3 V
-1.25
-2.50
-3.75
-5.00
VDS (V)
10-6
0.2
Tj = 25 C
Tj = 25 C; VDS = -5 V
PMV65XP
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PMV65XP
NXP Semiconductors
017aaa842
300
-1.4 V -1.5 V -1.6 V -1.7 V -1.8 V
RDSon
(m)
017aaa843
300
RDSon
(m)
200
200
-2 V
100
Tj = 150 C
100
-2.5 V
VGS = -4.5 V
-5
-10
Tj = 25 C
ID (A)
-15
Tj = 25 C
Fig. 8.
-2
-4
-6
VGS (V)
-8
ID = -2.8 A
Fig. 9.
017aaa844
-12
2.0
ID
(A)
a
-9
1.5
-6
1.0
-3
Tj = 150 C
-0.5
-1.0
0.5
Tj = 25 C
-1.5
VGS (V)
0
-60
-2.0
PMV65XP
60
120
Tj (C)
180
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PMV65XP
NXP Semiconductors
017aaa846
-2.0
017aaa847
103
Ciss
VGS(th)
(V)
C
(pF)
-1.5
102
-1.0
max
Coss
Crss
typ
-0.5
min
0
-60
60
120
Tj (C)
10
-10-1
180
-1
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
017aaa848
-5
VDS
VGS
(V)
ID
-4
VGS(pl)
-3
VGS(th)
VGS
-2
QGS1
QGS2
QGS
-1
QGD
QG(tot)
017aaa137
2.5
5.0
7.5
QG (nC)
10.0
PMV65XP
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PMV65XP
NXP Semiconductors
017aaa849
-12
IS
(A)
-9
-6
Tj = 150 C
Tj = 25 C
-3
-0.5
-1.0
VSD (V)
-1.5
VGS = 0 V
(1) Tj = 150 C
(2) Tj = 25 C
Fig. 16. Source current as a function of source-drain voltage; typical values
t2
duty cycle =
t1
t2
t1
006aaa812
PMV65XP
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PMV65XP
NXP Semiconductors
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
0.48
0.38
1.9
Dimensions in mm
0.15
0.09
04-11-04
13. Soldering
3.3
2.9
1.9
solder lands
1.7
solder resist
solder paste
0.6
(3)
0.7
(3)
occupied area
Dimensions in mm
0.5
(3)
0.6
(3)
1
sot023_fr
PMV65XP
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PMV65XP
NXP Semiconductors
2.2
1.2
(2)
1.4
(2)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
sot023_fw
Revision history
Data sheet ID
Release date
Change notice
Supersedes
PMV65XP v.2
20130212
PMV65XP v.1
Modifications:
PMV65XP v.1
20120921
PMV65XP
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PMV65XP
NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Qualification
Product
[short] data
sheet
Production
[1]
[2]
[3]
Definition
15.2 Definitions
Preview The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMV65XP
12 February 2013
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PMV65XP
NXP Semiconductors
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
PMV65XP
12 February 2013
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PMV65XP
NXP Semiconductors
16. Contents
1
Applications ........................................................... 1
Marking ................................................................... 2
10
Characteristics ....................................................... 5
11
12
13
Soldering .............................................................. 10
14
15
15.1
15.2
15.3
15.4
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