CHAPTER 1:

3:

(a) PE= -63.52 eV; (b) E = -4.56eV

8:

(a) nAr=3.24 x 1015 cm -3; (b) nHe=2.86x 1016 cm -3; P=1.37 torr.

12:

(a) cs = Cm/ Mat = (20.8 J K-1 mol-1)/(28.02 g/mol) = 0.742 J K-1 g-1;
(b) cs = 0.47 J K-1 g-1;
(c) cs = 0.231 J K-1 g-1;
(d) cs = 0.886 J K-1 g-1

20:

(a) EA = 3.47 eV/atom;

(b) D = 8.12 x 10-5 m 2/s;
(c) L1000 C = 1.04 x 10-7 m or 0.104 m; L1200 C= 8.90 x 10-7 m or 0.89 m;
(d) Diffusion in polycrystalline Si would involve diffusion along grain boundaries, which is
easier than diffusion in the bulk. The activation energy is smaller because it is easier for an
atom to break bonds and jump to a neighboring site; there are vacancies or voids, broken
bonds, and strained bonds in a grain boundary.

21:

L1200 C = 7.49 x 10-7 m or 0.75 m

22:

(a) a= 3.147 x 10-10 m = 0.3147 nm;

nat= 6.415 x 1022 cm -3 = 6.415x 1028 m -3; R= 0.1363nm ;
(b) a= 0.4077 nm; n at = 5.901x1022 cm -3 = 5.901x1028 m -3; R=0.1442 nm

24:

n(100)= 9.216x1018 atoms m -2;

n (110)=1.303x1019 atoms m -2;
n(111)=5.321x1018 atoms m -2;
n(bulk) =5.596x1028 atoms m-3

28:

(a) n= 50.0 atoms/nm 3; =2331 kg m -3 or 2.33 g cm -3;

(b) n 100 = 6.78 atoms/nm 2 or 6.78x1018 atoms/m2;
n110 = 9.59 atoms/nm2 or 9.59x 1018 atoms/m 2
n111= 7.83 atoms/nm2 or 7.83 x 1018 atoms/m2
(c) n= 22.7 molecules per m3

31:

(a) L rms = 2.19 x 10-9 m or 2 nm;

(b) Co = 0.33
(c) W a= 60 wt.% -phase; W L=39.5 wt.% liquid phase
(d) 68.4 wt.% -phase; 31.6 wt.% -phase

CHAPTER 2:
2:

(a) 2.03 x 10-8 m; (b) 5.18 x 10-3 K-1;

(c) 7.22 x 10-15 s; 12.7 cm 2 V-1s-1; (d) 14.4 nm; (e) -25.4%

3:

4.26x10-3 m 2 V-1 s-1 = 42.6 cm 2 V-1 s-1; 33.9 nm

7:

X < 5.81%; W Cu = 1.956% ;

X < 0.31%; W Au = 0.955% ;

9:

61.65 n m; 95.09 n m; 121.63 n m; 78.09 n m;

77.71 n m; 256.51 n m; 179.74 n m; 296.89 n m

11:

(a) 3.24; (b) 5.94 nm; (c) 85.4 W m-1 K-1

13:

78.41 nm

17:

(a) 0.0362 K W -1; 3.62 K; (b) 94.5% Cu-5.5% Zn

20:
5.901x1028m -3; 0.0945 T; 0.00228 W
24:
60.43 g mol-1; 2.39 x 1022 units cm -3; 2.79x1021cm-3;
6.04 x 10-8 cm 2 V-1 s-1; 2.7 10-5 -1 cm-1; 3.8 x 104 cm

CHAPTER 3:
30
21
-2 -1
1: (a) Nph = 2.16x10
photons per second; (b) Photon flux= 4.02x10
photons m s , E=
-2
868V/m; (c) J=644A m
4: Eph (rod) = 3.92 10-19 J or 2.45 eV; Eph (cones) = 3.58 10-19 J or 2.24 eV; (b)

Etotal

= 3.53
-17
-7
-1 -2
-7
-2
-15
10
J or 221 eV; (c) Ith = 1.41 10 J s m or 1.41 10 W m ; (d) Pst = 7.17 10
J
-1
s or 7.17
-15
10
W
5: Eph = 9.945 10

-15

7
-2
J or 62.15 keV; = 1 10 photons cm

7: (a) = 4.733 10-19 J or 2.96 eV; (b) KE = - Eph = 4.14 eV - 2.96 eV = 1.18 eV; (c) J=
4.84 mA
-2
cm
12: V = 106 V
14: (a) = 9.20 10-15 m or 9.20 fm; (b) L =6.0 m
17: (a) ((K)= 122 nm; ( (Ke)= 91.2nm; (b) ((L)= 657 nm; ( (Le)= 365 nm; (c)
2
((M)= 1877 nm; ( (Me)= 821 nm; (d) The transition energy depends on Z , and therefore
2
the emitted photon wavelength of the spectral lines depends inversely on Z .
22: Excitation energy = E He*- EHe = 30.27 eV
27: (a) 0 eV; (b) 1.2 eV; (c) 4.1 eV; (d) 7.3 eV; (e) 7.9 eV
CHAPTER 4:
8: At 0 K, EFo(Na)= 5.0410-19 J or 3.15 eV, EFo (Au)= 8.86310-19 J or
5.54 eV; At 300 K, EF(Na) = 3.15 eV, EF(Au) = 5.54 eV;
-3
22
-3
For Na, gEF (Na)= 1.21022 cm e/V, gcenter(Na)= 1.1710
cm e/V;
-3
22
-3
For Au, gEF (Au)= 1.61022 cm e/V, gcenter(Au)= 1.56810 cm e/V;
9: EFo= 7.04 eV;

[% difference]= 8.31%
-3
28
n (m ) ( 10 )

Cu

8.490

Zn

13.15

9.43

EFO (eV)
(experimental
6.5
)
11.0

Al

18.07

11.7

11.8

Metal

EFO (eV)
(Calculated)
7.04

% Difference
8.31
14.3
0.847

CHAPTER 5:
1: (a) Eg = 3.31 10-19J or 2.07 eV
14
-1
(b) NEHP = 3.02 10
EHP s
-7
(c) = 8.74 10 m or 874nm
(d) It is not in the visible region (it is in the
-6
infrared) (e) g = 1.13 10 m or 1130 nm.
2: ni =2.3 10
3:

13

6:

9:

-3

1 -1
; =0.022 - cm ; =45.45 cm.

Intrinsic Fermi level of Si is 0.011 eV below the middle of the band gap
(Eg/2) Intrinsic Fermi level of Ge is 0.0065 eV below the middle of the band
gap (Eg/2) Intrinsic Fermi level of GaAs is 0.039 eV above the middle of the
band gap (Eg/2).

4: = 0.216
5:

cm

-1

cm

-1

-1 -1
; = 1/ = 4.63 cm

2 -1 -1
16
-3
For hole drift mobility approximately 450 cm V s
Na= 1.3810
cm
2 -1 -1
16
-3
For hole drift mobility approximately 350 cm V s
Na= 1.7810 cm
(a)Doping does not always increase the conductivity
-3
-6
-1
-1
(c) pm= 1.73 1010 cm , min = 2.5 10
cm
The intrinsic value corresponding to pm is simply ni .Comparing it to pm: pm/ni =1.73
The intrinsic conductivity is int. Comparing this value to the minimum conductivity: min/int
=0.87

(a)
(b)

1.
2.
3.
1.

-1
-1
= 12.8 cm
EF = 0.416 eV above
-1
-1
EFi

= 7.21 cm
-1
-1
= 1.12 cm

amount
2. EF= 0.357 eV above EFi.The Fermi level from (a) and (b) has shifted down by an
0.059 eV.
13:

(a) The average number of valence electrons is 4 electrons per atom

(b) Se and Te will act as donors
(c) Zn and Cd will act as acceptors.
(d) Si atom acts as an acceptor

(e) Si acts as a donor.

(f) They will follow the example of GaAs
14:

17:

(a) = 3 10-9 -1 cm-1 , = 3.33 108 cm

-1
-1
(b) n = 1.36 cm , n = 0.735 cm , EF = 0.516 eV above EFi (intrinsic
-3
Fermi level) (c) p = 0.044 cm
-5
-5
(b) IA = 1.06 10 A, IB = 5.29 10 A

19:
Eg (eV)
Si

1.10

GaAs

1.42

InAs

0.36

InSb

0.17

-3
ni (cm ) e(cm2V-1s- e(cm2V-1s-1)
10 1 1,350
450
1 10
)
6
8,500
400
2 10
15
33,000
460
1 10
16
78,000
850
2 10

GaAs sensor would exhibit the worst temperature drift.

b
3

3 -1 -1
RH (m A s )
-312

21.25

-2.84 10

71.71

-6.08 10

91.76

-3.06 10

6
-3
-4