MC74HC03A

Quad 2-Input NAND Gate

with Open-Drain Outputs

HighPerformance SiliconGate CMOS

The MC74HC03A is identical in pinout to the LS03. The device
inputs are compatible with Standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
The HC03A NAND gate has, as its outputs, a highperformance
MOS NChannel transistor. This NAND gate can, therefore, with a
suitable pullup resistor, be used in wiredAND applications. Having
the output characteristic curves given in this data sheet, this device can
be used as an LED driver or in any other application that only requires
a sinking current.

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MARKING
DIAGRAMS
14
SOIC14
D SUFFIX
CASE 751A

14
1

Features

Output Drive Capability: 10 LSTTL Loads With Suitable Pullup

Resistor
Outputs Directly Interface to CMOS, NMOS and TTL
High Noise Immunity Characteristic of CMOS Devices
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1 mA
In Compliance With the JEDEC Standard No. 7 A Requirements
Chip Complexity: 28 FETs or 7 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant

14
14
1

1
A
L, WL
Y, YY
W, WW
G or G

PIN 14 = VCC
PIN 7 = GND
* Denotes open-drain outputs

= Assembly Location
= Wafer Lot
= Year
= Work Week
= PbFree Package

(Note: Microdot may be in either location)

FUNCTION TABLE
Inputs

OUTPUT
PROTECTION
DIODE

3,6,8,11

Y*

HC
03A
ALYWG
G

TSSOP14
DT SUFFIX
CASE 948G

LOGIC DIAGRAM
VCC

HC03AG
AWLYWW

Output

L
L
H
H

L
H
L
H

Z
Z
Z
L

Z = High Impedance
A
B

1,4,9,12

ORDERING INFORMATION

2,5,10,13

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Pinout: 14Lead Packages (Top View)

VCC
14

B4
13

A4
12

Y4
11

B3
10

A3
9

Y3
8

A1

B1

Y1

A2

B2

Y2

GND

Semiconductor Components Industries, LLC, 2013

October, 2013 Rev. 13

Publication Order Number:

MC74HC03A/D

MC74HC03A

MAXIMUM RATINGS
Symbol

Parameter

Value

Unit

0.5 to + 7.0

VCC

DC Supply Voltage (Referenced to GND)

Vin

DC Input Voltage (Referenced to GND)

0.5 to VCC + 0.5

Vout

DC Output Voltage (Referenced to GND)

0.5 to VCC + 0.5

Iin

DC Input Current, per Pin

20

mA

Iout

DC Output Current, per Pin

25

mA

ICC

DC Supply Current, VCC and GND Pins

PD

Power Dissipation in Still Air

Tstg

Storage Temperature

TL

Lead Temperature, 1 mm from Case for 10 Seconds

SOIC or TSSOP Package

50

mA

500
450

mW

65 to + 150

SOIC Package
TSSOP Package

260

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating SOIC Package: 7 mW/C from 65 to 125C
TSSOP Package: 6.1 mW/C from 65 to 125C

RECOMMENDED OPERATING CONDITIONS

Symbol
VCC

Vin, Vout

Parameter

Min

Max

Unit

2.0

6.0

DC Supply Voltage (Referenced to GND)

DC Input Voltage, Output Voltage (Referenced to GND)

TA

Operating Temperature, All Package Types

tr, tf

Input Rise and Fall Time

(Figure 1)

VCC

55

+125

0
0
0

1000
500
400

ns

VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V

DESIGN GUIDE

Criteria

Value

Unit

Internal Gate Count*

7.0

ea

Internal Gate Propagation Delay

1.5

ns

5.0

mW

0.0075

pJ

Internal Gate Power Dissipation

Speed Power Product
*Equivalent to a twoinput NAND gate

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2

This device contains protection

circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

MC74HC03A
DC CHARACTERISTICS (Voltages Referenced to GND)
Condition

VCC
V

Guaranteed Limit

Symbol

Parameter

55 to 25C

85C

125C

Unit

VIH

Minimum HighLevel Input Voltage

Vout = 0.1V or VCC 0.1V

|Iout| 20mA

2.0
3.0
4.5
6.0

1.50
2.10
3.15
4.20

1.50
2.10
3.15
4.20

1.50
2.10
3.15
4.20

VIL

Maximum LowLevel Input Voltage

Vout = 0.1V or VCC 0.1V

|Iout| 20mA

2.0
3.0
4.5
6.0

0.50
0.90
1.35
1.80

0.50
0.90
1.35
1.80

0.50
0.90
1.35
1.80

VOL

Maximum LowLevel Output

Voltage

Vout = 0.1V or VCC 0.1V

|Iout| 20mA

2.0
4.5
6.0

0.1
0.1
0.1

0.1
0.1
0.1

0.1
0.1
0.1

Vin = VIH or VIL

3.0
4.5
6.0

0.26
0.26
0.26

0.33
0.33
0.33

0.40
0.40
0.40

|Iout| 2.4mA
|Iout| 4.0mA
|Iout| 5.2mA

Iin

Maximum Input Leakage Current

Vin = VCC or GND

6.0

0.1

1.0

1.0

mA

ICC

Maximum Quiescent Supply

Current (per Package)

Vin = VCC or GND

Iout = 0mA

6.0

1.0

10

40

mA

IOZ

Maximum ThreeState Leakage

Current

Output in HighImpedance State

Vin = VIL or VIH
Vout = VCC or GND

6.0

0.5

5.0

10

mA

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

Symbol

Parameter

Guaranteed Limit

VCC
V

55 to 25C

85C

125C

Unit

tPLZ,
tPZL

Maximum Propagation Delay, Input A or B to Output Y

(Figures 1 and 2)

2.0
3.0
4.5
6.0

120
45
24
20

150
60
30
26

180
75
36
31

ns

tTLH,
tTHL

Maximum Output Transition Time, Any Output

(Figures 1 and 2)

2.0
3.0
4.5
6.0

75
27
15
13

95
32
19
16

110
36
22
19

ns

Cin

Maximum Input Capacitance

10

10

10

pF

Cout

Maximum ThreeState Output Capacitance

(Output in HighImpedance State)

10

10

10

pF

Typical @ 25C, VCC = 5.0 V, VEE = 0 V

CPD

8.0

Power Dissipation Capacitance (Per Buffer)*

* Used to determine the noload dynamic power consumption: PD = CPD VCC2 f + ICC VCC .

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3

pF

MC74HC03A
VCC
tf

tr
INPUT A

Rpd

OUTPUT
DEVICE
UNDER
TEST

GND
tPZL

tPLZ

HIGH
IMPEDANCE

90%
50%
10%

OUTPUT Y

1kW

VCC

90%
50%
10%

10%

TEST
POINT
CL*

VOL

tTHL

*Includes all probe and jig capacitance

Figure 1. Switching Waveforms

Figure 2. Test Circuit

25
VCC=5V

TYPICAL
T=25C

I D, SINK CURRENT (mA)

20
T=25C
15
T=85C
10

T=125C
EXPECTED MINIMUM*

0
0

2
3
4
VO, OUTPUT VOLTAGE (VOLTS)

*The expected minimum curves are not guarantees, but are design aids.

Figure 3. OpenDrain Output Characteristics

VCC
+
VR
+
VF
-

VCC
PULLUP
RESISTOR
A1
B1
A2
B2

An
Bn

1/4
HC03

Y1

1/4
HC03

OUTPUT
LED1

1/4
HC03

1/4
HC03

DESIGN EXAMPLE
CONDITIONS: ID^10mA
TYPICAL CURVE, at ID=10mA,
VDS^0.4V

Y2
LED2
LED
ENABLE

1/4
HC03

VCC

V * VF * VO
NR + CC
ID

Yn

+ 5V * 1.7V * 0.4V
10mA

OUTPUT = Y1 Y2 . . . Yn
= A1B1 A2B2 . . . AnBn

+ 290W
USE R = 270W

Figure 4. Wired AND

Figure 5. LED Driver With Blanking

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4

MC74HC03A
ORDERING INFORMATION
Package

Shipping

MC74HC03ADG

SOIC14
(PbFree)

55 Units / Rail

MC74HC03ADR2G

SOIC14
(PbFree)

2500 / Tape & Reel

MC74HC03ADTR2G

TSSOP14
(PbFree)

2500 / Tape & Reel

NLV74HC03ADG*

SOIC14
(PbFree)

55 Units / Rail

NLV74HC03ADR2G*

SOIC14
(PbFree)

2500 / Tape & Reel

NLV74HC03ADTR2G*

TSSOP14
(PbFree)

2500 / Tape & Reel

Device

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP
Capable

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5

MC74HC03A
PACKAGE DIMENSIONS
SOIC14 NB
CASE 751A03
ISSUE K
D

A
B

14

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.

A3
E

L
1

0.25

DETAIL A

13X

b
0.25

C A

S
DETAIL A

X 45 _

A1

DIM
A
A1
A3
b
D
E
e
H
h
L
M

SEATING
PLANE

SOLDERING FOOTPRINT*
6.50

14X

1.18
1

1.27
PITCH

14X

0.58

DIMENSIONS: MILLIMETERS

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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6

MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_

INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_

MC74HC03A
PACKAGE DIMENSIONS
TSSOP14
DT SUFFIX
CASE 948G01
ISSUE B
14X K REF

0.10 (0.004)
0.15 (0.006) T U

T U

N
2X

14

L/2

0.25 (0.010)

M
B
U

L
PIN 1
IDENT.

N
F

0.15 (0.006) T U

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE W.

DETAIL E
K

A
V

K1

J J1

DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M

SECTION NN
W

C
0.10 (0.004)
T SEATING
PLANE

DETAIL E

MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50

1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.50
0.60
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_

SOLDERING FOOTPRINT*
7.06
1

0.65
PITCH

14X

0.36

14X

1.26

DIMENSIONS: MILLIMETERS

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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7

INCHES
MIN MAX
0.193 0.200
0.169 0.177
0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.020 0.024
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_

MC74HC03A

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MC74HC03A/D