Professional Documents
Culture Documents
Technology
Instructor: Wei Wu
ZHS 252, 2:00-3:20 MW
Email: wu.w@usc.edu
Tel: 213-740-3085
Office: PHE632, Office hour: 5-6 pm Tue. Thurs.
TA: Yuhan Yao
Email: yuhanyao@usc.edu
Office: VHE306, Office hour: 12 am - 2 pm Monday
House Keeping
Special thank to
Prof. Bo Cui of U. of Waterloo for sharing his class notes.
Prof. Yong Chen of UCLA for sharing his class notes.
Course text: Fabrication Engineering at the Micro and Nanoscale, by Stephen A.
Campbell + handout
The books can be used as a reference book for fabrication related topics even
after the class.
Grading:
10% homework, 20% oral presentation, 30% mid-term, 40% final exam.
A: [Ave+s, 100], A-: [Ave, Ave+s), B+: [Ave-s, Ave),
Guest lectures
Prof. Qiang Huang: Nano-informatics
Prof. Han Wang: State-of-the-art device
technologies
One speaker from industry
For non-flat surface, there are often artifacts for SPM imaging because the tip is
not infinitely thin and long. As a result, a vertical profile always appears slopped
when imaged using SPM.
AFM generally dont need vacuum and can image any surface (insulation or not)
and even inside liquid (extremely important for bio-imaging).
AFM is cheaper than high resolution field emission SEM .
Operation of an STM
Atom
Surface
STM
Applications of STM
Surface Structure with atomic resolution
Surface geometry
Molecular structure
Local electronic structure
Local spin structure
Single molecular vibration
Electronic transport
Nano-fabrication
Atom manipulation
Nano-chemical reaction
Various reconstructions of Ge(100)-2x1
uij d ijk Ek
Displacement electric field
Photo-diode
(divided into
four parts)
Photo-diode
(divided into
four parts)
Tiny deflection of cantilever leads to large shift of the beam spot position on the
photo-diode, so extremely sensitive for z-dimension detection (sensitivity Z << 1)
Far (50-100nm)
Contact
Contact
Silicon nitride
2. RIE Si dry-etch
3. KOH Si wet-etch
4. SiO2 mask
5. RIE Si dry-etch
6. SiO2 mask on backside
7. KOH Si wet-etch, passivation on front-side
8. BHF (buffered HF) SiO2 wet-etch
9. RIE Si dry-etch
10. Release of cantilever in BHF
T. Wakayama, T. Kobayashi, N. Iwata, N. Tanifuji, Y. Matsuda, and S.
Yamada, Sensors and Actuators a-Physical, vol. 126, pp. 159-164, 2006.
Ethylene-diamine
Pyrocatechol
Pyrazine
KOH etched
Si-mould
Released tip
Not popular
Raspberry polymer
feff = 2 /
Cantilever oscillate and is
positioned above the surface
so that it only taps the surface
for a very small fraction of its
oscillation period.
When imaging poorly
immobilized or soft samples,
tapping mode may be a far
better choice than contact
mode.
0300kHz
Free oscillation
Large amplitude
Hitting surface
Lower amplitude
Phase imaging
Measure the phase lag of the cantilever driving frequency
vs. actual oscillation.
Contrast depends on the physical properties (Youngs
modulus and damping) of the material.
Polymer blend
(Polypropylene & EDPM)
Drive signal
Cantilever signal
Topography
Phase