Professional Documents
Culture Documents
4lsJ
0;-JJ Jl
--
_1
;;
o.l.iWI
L.i.l\ c..>----4
.-: 11
LJ
J:!......JS.:!L....ll: w1 )\ J
Triticum aestivum
__
______)
t - ,(, ..
tJ .._,
.J.('.i
ol.-...
,,.,
J'
J--.4\.i
;:f'i
UJS:iJ
of' Vf -A'
.;fo.lll
.J.('.i
'
Nam of researcher
The Subject
No. of
1-8
9-15
16-22
23-28
lsmhi, F.A
Habucation, N.F
N.F. Habubi
Abstract
Thin film of Mn203 have been prepared using spray pyrolysis
technique . The effect on optical properties were studied , these
includes the absorbency optical energy gap for direct allowed
and forbidden band to band transition , our study on Mn 20 3 lead
us to know that Mn20 3 is a direct semiconductor;-
Introduction
Recently there has been considerable inferable interest in
the development of new types of low cost solar absorption coatings
'
Ismhi, F.A
Habucation , N.F
Experimental
Mn 20 3 films have been deposited using _spray pyrolysis
technique .The experimental arrangements is similar to that.
described previously [8,9] . A solution of 0.1 molarity Mn(N03)2,
in redistilled water is prepared , this solution was sprayed on
preheated borosilicate glass plate , it has been found that the
optimum conditions to obtain high quality film , transparent
,adherent ,strongly to glass and uniform thickness were :
i. Substrate temperature 350"C .
ii. Spraying rate 10 cm3/min.
iii. Distance between sprayer and substrate 30 1 em.
iv. Solution contains 7.17627 gin 250cm3 H 20.
10
........... (1)
a=
where
is the difference in the absorption at each
wavelength of two thin. films of different thickness . The
phonon energy dependence of the optical absorption coefficient of
Mn203 is shown in fig(2) , it can be seen that the-absorption edge
is not so sharp , this may be related to the polycrystalline
structure of the coatings . _
As expected direct transition occur in the region of high
absorption a.> 103 cm- 1 , and indirect transition occur in the low
absorption region a.> 103 cm-1 , so Mn20 3 is a direct transition
material, using the assumption that the transition probability
becomes constant near the absorption edge,the variation of the
absorption coefficient with photon energy for direct allowed band
to band transition is of the form [7]:
(
2=
11
'
2
shows straight line when extended to (Ln T 1_2) =0 giving the value
of Eg =2.25 0.05 eV for direct allowed .band to band transition.
The energy gap in the direct forbidden transition (kt=O) is
calculated from the relation [11]:
(aht) 213 .= a 0 (hf-Eg) ........ (3)
A satisfactory fit was obtained from (a ht) 213 as a function of
photon energy as shown in fig (4) extrapolation of the straight line
to (a ht) 213 =0
gives the band gap of the direct forbidden
transition Eg=1.85 0.05 eV. The variation of the absorption
cofficient with photon energy for direct transition is given by
[11]:
12
3.
4.
5.
6.
7.
8.
9.
10.
11.
13
Ismhi, F.A
Habucation , N.F
.sz
Fig(J) XRD (Intensity versus 26).
!
.,_
'
j
'
_,I
I
'
- ,_
--
I-
'I
!
14
lsmhi, F.A
_ Habucation , N.F
- =
--
"
)
I
'
Ii
_/
/
Fig(4) (n
.1
i
}
r
I
/
/
- - ; - - - . , . - - - -
15