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2SD768(K)

Silicon NPN Epitaxial

Application
Medium speed and power switching complementary pair with 2SB727(K)

Outline
TO-220AB

2 3

1. Base
2. Collector
(Flange)
3. Emitter

3 k
(Typ)

200
(Typ)
3

Absolute Maximum Ratings (Ta = 25C)


Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

120

Collector to emitter voltage

VCEO

120

Emitter to base voltage

VEBO

Collector current

IC

Collector peak current

I C(peak)

10

40

Collector power dissipation

PC *

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

Note:

1. Value at TC = 25C.

2SD768(K)
Electrical Characteristics (Ta = 25C)
Item

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown V(BR)CEO


voltage

120

I C = 25 mA, RBE =

Emitter to base breakdown


voltage

V(BR)EBO

I E = 50 mA, IC = 0

Collector cutoff current

I CBO

100

VCB = 120 V, IE = 0

I CEO

10

VCE = 100 V, RBE=

DC current transfer ratio

hFE

1000

20000

Collector to emitter saturation

VCE(sat)1

1.5

I C = 3 A, IB = 6 mA*1

voltage

VCE(sat)2

I C = 6A, IB = 60 mA*1

Base to emitter saturation

VBE(sat)1

I C = 3 A, IB = 6 mA*1

voltage

VBE(sat)2

3.5

I C = 6 A, IB = 60 mA*1

Turn on time

t on

1.0

I C = 3 A, IB1 = IB2 = 6 mA

Turn off time

t off

3.0

I C = 3 A, IB1 = IB2 = 6 mA

Note:

Symbol

VCE = 3 V, IC = 3 A*1

1. Pulse test.

Maximum Collector Dissipation


Curve
Area of Safe Operation

0
s

IC(max)

5C
s
=2
1 m 0 ms
C
n(T
tio

=1

1.0

era

Op

20

10

40

1 s

iC(peak)

10

PW

Collector current IC (A)

30

DC

Collector power dissipation PC (W)

60

0.3

Ta = 25C
1 shot pulse

0.1

0.03
0

50
100
Case temperature TC (C)

150

3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)

2SD768(K)
DC Current Transfer Ratio
vs. Collector Current

Typical Output Characteristics


10,000

10
DC current transfer ratio hFE

Collector current IC (A)

TC = 25C
8

6
1.2
1.0
0.8
0.6

0.4
2

3,000

Ta

C
75

25

1,000

C
C
5

VCE = 3 V
Pulse

300

0.2 mA
IB = 0

100
0.1

1
2
3
4
5
Collector to emitter voltage VCE (V)

Switching Time vs. Collector Current

TC = 25C
3

IC/IB = 200
500
00
5
=
I C/I B
200

VBE(sat)
1.0

10

10

10

Switching time t (s)

Collector to emitter saturation voltage VCE(sat) (V)


Base to emitter sauration voltage VBE(sat) (V)

Saturation Voltage
vs. Collector Current

0.3
1.0
3
Collector current IC (A)

VCE(sat)
0.3

1.0
0.3
0.1

tstg
ton
tf
VCC = 30V
IC = 500 IB1 = 500 IB2
Ta = 25C

0.03
0.1
0.1

1.0
3
0.3
Collector current IC (A)

10

0.01
0.1

3
0.3
1.0
Collector current IC (A)

10

2SD768(K)
Transient Thermal Resistance
Thermal resistance j-c (C/W)

10
1 to 1,000 s

1 to 1,000 ms

1.0
0.3

TC = 25C

0.1
0.03
0.01
1

10

10
Time t

100

1,000 (s)

100

1,000 (ms)

Unit: mm

11.5 MAX
2.79 0.2

10.16 0.2
9.5

3.6 -0.08
+0.1

1.26 0.15

15.0 0.3

6.4

18.5 0.5

1.27

+0.2
0.1

8.0

4.44 0.2

7.8 0.5

1.5 MAX
0.76 0.1

2.54 0.5

2.54 0.5

14.0 0.5

2.7 MAX

0.5 0.1

Hitachi Code
JEDEC
EIAJ
Weight (reference value)

TO-220AB
Conforms
Conforms
1.8 g

Cautions
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contact Hitachis sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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