Power Transistors

2SD1640
Silicon NPN epitaxial planar type darlington
Unit: mm
8.0+0.5
0.1

For low-frequency output amplification

3.20.2

Absolute Maximum Ratings Ta = 25C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

120

Collector-emitter voltage (Base open)

VCEO

100

Emitter-base voltage (Collector open)

VEBO

Collector current

IC

Peak collector current

ICP

Collector power dissipation

PC

1.2

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

0.750.1

0.50.1

4.60.2

3.050.1

3.80.3
1.90.1

High forward current transfer ratio hFE

Large peak collector current ICP
High collector-emitter voltage (Base open) VCEO

16.01.0

Features

11.00.5

3.160.1

0.50.1

1.760.1

2.30.2

1: Emitter
2: Collector
3: Base
TO-126B-A1 Package

Internal Connection
C

E
200

Electrical Characteristics Ta = 25C 3C

Parameter

Symbol

Collector-base voltage (Emitter open)

VCBO

IC = 100 A, IE = 0

120

Collector-emitter voltage (Base open)

VCEO

IC = 1 mA, IB = 0

100

Emitter-base voltage (Collector open)

VEBO

IE = 100 A, IC = 0

Collector-base cutoff current (Emitter open)

ICBO

VCB = 25 V, IE = 0

0.1

Emitter-base cutoff current (Collector open)

IEBO

VEB = 4 V, IC = 0

hFE

VCE = 10 V, IC = 1 A

Forward current transfer ratio

*1, 2

Collector-emitter saturation voltage *1

Base-emitter saturation voltage

*1

Conditions

Min

Typ

Max

Unit
V

40 000

VCE(sat)

IC = 1.0 A, IB = 1.0 mA

1.5

VBE(sat)

IC = 1.0 A, IB = 1.0 mA

2.0

4 000

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE

Publication date: May 2003

4 000 to 10 000 8 000 to 20 000 16 000 to 40 000

SJD00209BED

2SD1640
PC Ta

IC VCE

1.6

2.5

1.2

Collector current IC (A)

0.8

0.4

150A
120A

2.0

90A

1.5
60A

1.0

0.5

40

80

120

160

30A

Ambient temperature Ta (C)

Forward current transfer ratio hFE

10

TC=25C

1
100C
25C

104

103

25C

102

10
0.01

TC=100C
25C

0.1

10

Thermal resistance Rth (C/W)

t=10ms
t=100ms
t=1s

101

102

10

60

IE=0
f=1MHz
TC=25C

50

40

30

20

10

10

100

Collector-base voltage VCB (V)

104

Single pulse
TC=25C

IC

103
0.1

0.1

Rth t

Safe operation area

0.01
0.01

Collector current IC (A)

Collector current IC (A)

ICP

0.1

Cob VCB
VCE=10V

IC/IB=1000

10

25C

Collector current IC (A)

100

0.1

TC=100C

hFE IC
105

0.1
0.01

25C

Collector-emitter voltage VCE (V)

VBE(sat) IC

Collector current IC (A)

10

IC/IB=1000

10

Collector output capacitance

C (pF)
(Common base, input open circuited) ob

Collector power dissipation PC (W)

IB=180A

100

free air

103

102

10

101
104

103

102

101

Time t (s)

Collector-emitter voltage VCE (V)

Collector-emitter saturation voltage VCE(sat) (V)

TC=25C

Without heat sink

Base-emitter saturation voltage VBE(sat) (V)

VCE(sat) IC

3.0

SJD00209BED

10

102

103

104

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