FDS9926A

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

These N-Channel 2.5V specified MOSFETs use

Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V 10V).

6.5 A, 20 V.

RDS(ON) = 30 m @ VGS = 4.5 V

RDS(ON) = 43 m @ VGS = 2.5 V.

Optimized for use in battery protection circuits

Low gate charge

Applications
Battery protection
Load switch
Power management

5
6

4
3

Q1

7
8

Absolute Maximum Ratings

Symbol

2
Q2

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

20

VGSS

Gate-Source Voltage

10

ID

Drain Current

Continuous

(Note 1a)

Pulsed
PD

20

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

TJ, TSTG

6.5

(Note 1a)

1.6

(Note 1b)

(Note 1c)

0.9
55 to +150

(Note 1a)

78

C/W

(Note 1)

40

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9926A

FDS9926A

13

12mm

2500 units

2003 Fairchild Semiconductor Corp.

FDS9926A Rev E (W)

FDS9926A

July 2003

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ Max Units

Off Characteristics
ID = 250 A

BVDSS

DrainSource Breakdown Voltage

VGS = 0 V,

BVDSS
TJ
IDSS

Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

ID = 250 A, Referenced to 25C

VDS = 16 V,

VGS = 0 V

IGSS

GateBody Leakage

VGS = 8 V,

VDS = 0 V

100

nA

ID = 250 A

1.5

On Characteristics

20

V
14

mV/C

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

0.6

VGS(th)
TJ
RDS(on)

Gate Threshold Voltage

Temperature Coefficient
Static DrainSource
OnResistance

ID = 250 A, Referenced to 25C

VGS = 4.5 V, ID = 6.5 A

VGS = 2.5 V, ID = 5.4 A
VGS = 4.5 V, ID =6.5A, TJ=125C

25
35
35

ID(on)

OnState Drain Current

VGS = 4.5 V,

VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V,

ID = 6.5 A

22

VDS = 10 V,
f = 1.0 MHz

V GS = 0 V,

650

pF

150

pF

85

pF

V GS = 15 mV, f = 1.0 MHz

1.4

VDD = 10 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6

16

ns
ns

mV/C
30
43
50

15

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics

(Note 2)

td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

17

td(off)

TurnOff Delay Time

15

26

ns

tf

TurnOff Fall Time

ns

Qg

Total Gate Charge

6.2

nC

Qgs

GateSource Charge

Qgd

GateDrain Charge

VDS = 10 V,
VGS = 4.5 V

ID = 3 A,

1.2

nC

1.7

nC

DrainSource Diode Characteristics and Maximum Ratings

VSD

DrainSource Diode Forward Voltage

VGS = 0 V,

IS = 1.3 A

trr

Diode Reverse Recovery Time

IF = 6.5 A,

diF/dt = 100 A/s

Qrr

Diode Reverse Recovery Charge

(Note 2)

0.73

1.3

15

nS

nC

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 78/W when
mounted on a 0.5in2
pad of 2 oz copper

b) 125/W when
mounted on a 0.02
in2 pad of 2 oz
copper

c) 135/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS9926A Rev E (W)

FDS9926A

Electrical Characteristics

FDS9926A

Typical Characteristics

20

2.4
VGS = 4.5V

VGS = 2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

2.5V

ID, DRAIN CURRENT (A)

16

3.5

3.0V

12

2.0V

0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)

1.8
1.6
2.5V

1.4

3.0V

1.2

3.5V

4.0V

4.5V

Figure 1. On-Region Characteristics.

10
ID, DIRAIN CURRENT (A)

15

20

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.
0.11

1.6
ID = 6.5A
VGS = 4.5V

ID = 3.25A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

0.8

1.4

1.2

0.8

0.6

0.09

0.07
o

TA = 125 C
0.05

0.03

TA = 25oC
0.01

-50

-25

0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)

125

150

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

100
o

TA = -55 C

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V

125 C
ID, DRAIN CURRENT (A)

2.2

15

25oC
10

VGS = 0V
10
o

TA = 125 C
1
25oC
0.1
o

-55 C
0.01
0.001
0.0001

0
1

1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9926A Rev E (W)

FDS9926A

Typical Characteristics

1000
VDS = 5V

ID = 3 A

f = 1 MHz
VGS = 0 V

15V

800

4
10V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

600

Ciss
400

Coss

200

Crss
0

5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

50

100s

RDS(ON) LIMIT

ID, DRAIN CURRENT (A)

P(pk), PEAK TRANSIENT POWER (W)

100

1ms
10ms
100ms
1s

10

10s
DC

1
VGS = 4.5V
SINGLE PULSE
RJA = 135oC/W

0.1

TA = 25oC
0.01
0.01

0.1

10

100

VDS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE
RJA = 135C/W
TA = 25C

40

30

20

10

0
0.001

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

20

0.01

0.1
1
t1, TIME (sec)

10

100

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

o

0.2

0.1

RJA = 135 C/W

0.1
0.05

P(pk)

0.02
0.01

t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS9926A Rev E (W)

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5